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TPCS8006
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)
TPCS8006
High-Speed Switching Applications Switching Regulator Applications DC-DC Converter Applications
* * * * Low drain-source ON resistance: RDS (ON) = 0.8 (typ.) High forward transfer admittance: |Yfs| = 1.6 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 250 V) Enhancement model: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 250 250 20 1.1 4.4 1.5 W 0.6 0.07 1.1 0.15 150 -55~150 mJ A mJ C C Unit V V V A
1.2.3. Gate 4 Source 5.6.7.8 Drain
Pulse (Note 1)
Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy(Note3) Avalanche current Repetitive avalanche energy (Note2a, Note 4) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
2-3R1F
Weight: 0.035 g (typ.)
Circuit Configuration
8 7 6 5
Note 1, Note 2, Note 3 and Note 4: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution.
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2
3
4
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TPCS8006
Thermal Characteristics
Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 83.3 208 Unit C/W C/W
Marking (Note 5)
Part No. (or abbreviation code)
S8006
Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Note 1: Ensure that the channel temperature does not exceed 150C.
Note 2: a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b)
FR-4 25.4 x 25.4 x 0.8 (unit: mm)
FR-4 25.4 x 25.4 x 0.8 (unit: mm)
(a)
(b)
Note 3: VDD = 50 V, Tch = 25C (initial), L = 1.0 mH, RG = 25 , IAR = 1.1 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: on lower right of the marking indicates Pin 1. Weekly code: (Three digits) Week of manufacture (01 for the first week of a year: sequential number up to 52 or 53) Year of manufacture (The last digit of a year)
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Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf toff Qg Qgs Qgd ID = 0.5 A VOUT VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 250 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 0.5 A VDS = 10 V, ID = 0.5 A Min Typ. Max Unit

250 1.5

0.8 1.6 380 32 105 11
10
100
A A
V V
3.5 1.0
0.7
S pF pF pF

VDD 200V, VGS = 10 V, - ID = 1.1 A
Turn-ON time Switching time Fall time
RL = 200
VGS 10 V 0V
20
4.7
ns 15

nC nC nC
VDD 100 V - Duty < 1%, tw = 10 s =
Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge
45 11 7 4

Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Drain reverse current (pulse) Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDRP VDSF trr Qrr Test Condition Min Typ. Max 4.4 Unit A V ns nC
IDR = 1.1 A, VGS = 0 V IDR = 1.1 A, VGS = 0 V, dIDR/dt = 100 A/s

100 320
-2.0
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030619EAA
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
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