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| LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N3209CSM HIGH SPEED, PNP, SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES 0.51 0.10 (0.02 0.004) 0.31 rad. (0.012) * SILICON PLANAR EPITAXIAL PNP TRANSISTOR * HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) * CECC SCREENING OPTIONS A 1.40 (0.055) max. 2.54 0.13 (0.10 0.005) 3 2 1 1.91 0.10 (0.075 0.004) 3.05 0.13 (0.12 0.005) 0.76 0.15 (0.03 0.006) 0.31 rad. (0.012) * SPACE QUALITY LEVELS OPTIONS * HIGH SPEED SATURATED SWITCHING A = 1.02 0.10 (0.04 0.004) Underside View PAD 1 PAD 2 PAD 3 Base Emitter Collector APPLICATIONS: For high reliablitity general purpose applications requiring small size and low weight devices. SOT23 CERAMIC (CSM) LCC1 PACKAGE ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCBO VCEO VEBO IC PD PD Rja Tj Tstg Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current Total Device Dissipation Derate above 50C Thermal Resistance Junction to Ambient Max Junction Temperature Storage Temperature -20V -20V -4V -200mA 300mW 2.20mW / C 420C / W 200C -55 to 200C Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 12/93 LAB ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter VCEO(sus)* V(BR)CBO* V(BR)EBO* ICES* Collector - Emitter Sustaining Voltage Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cut-off Current SEME 2N3209CSM Test Conditions IC = 10mA IC = 10A IE = 10A VCE = 10V VCE = 10V TC = 125C IC = 10mA IB = 1mA IB = 3mA IB = 10mA IB = 1mA IB = 3mA IB = 10mA VCE = 0.3V VCE = 0.5V VCE = 1V VCE = 0.5V IC = 0 VBE = 0 VBE = 0 Min. -20 -20 -4 Typ. Max. Unit V V V 80 10 0.15 0.20 0.60 V nA A VCE(sat)* Collector - Emitter Saturation Voltage IC = 30mA IC = 100mA IC = 10mA 0.78 0.85 25 30 15 12 0.98 1.2 1.7 120 V VBE(sat)* Base - Emitter Saturation Voltage IC = 30mA IC = 100mA IC = 10mA IC = 30mA IC = 100mA hFE* DC Current Gain -- Tamb = -55C IC = 30mA * Pulse test tp = 300s , 2% DYNAMIC CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter fT CEBO CCBO Transition Frequency Capacitance Input Capacitance Test Conditions IC = 30mA VEB = 0.5V VCB = 5V VCE = 10V IC = 0 IE = 0 f = 100MHz f = 1.0MHz f = 1.0MHz Min. 400 Typ. Max. Unit MHz 6.0 5.0 pF pF ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter ton toff Turn-on Time Turn-off Time Test Conditions VCC = 2V IC = 30mA IB1 = 1.5mA VCC = 2V IC = 30mA Min. Typ. Max. Unit 60 90 ns ns IB1 = IB2 = 1.5mA Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 12/93 |
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