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| ON Semiconductort Amplifier Transistor NPN Silicon 2N4410 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 80 120 5.0 250 625 5.0 1.5 12 -55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C 1 2 3 CASE 29-11, STYLE 1 TO-92 (TO-226AA) COLLECTOR 3 2 BASE 1 EMITTER Symbol Min Max Unit THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 500 Adc, VBE = 5.0 Vdc, RBE = 8.2 k ohms) Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO V(BR)CEX V(BR)CBO V(BR)EBO ICBO -- -- IEBO -- 0.01 1.0 0.1 Adc 80 120 120 5.0 -- -- -- -- Vdc Vdc Vdc Vdc Adc (c) Semiconductor Components Industries, LLC, 2001 1 November, 2001 - Rev. 11 Publication Order Number: 2N4410/D 2N4410 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) Collector-Emitter Saturation Voltage (IC = 1.0 mAdc, IB = 0.1 mAdc) Base-Emitter Saturation Voltage (IC = 1.0 mAdc, IB = 0.1 mAdc) Base-Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE 60 60 VCE(sat) VBE(sat) VBE(on) -- -- -- -- 400 0.2 0.8 0.8 Vdc Vdc Vdc -- SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product(2) (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) Collector-Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz, emitter guarded) Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz, collector guarded) 2. fT = |hfe| * ftest. fT Ccb Ceb 60 -- -- 300 12 50 MHz pF pF http://onsemi.com 2 2N4410 500 300 h FE, DC CURRENT GAIN 200 100 50 30 20 10 7.0 5.0 0.1 -55C TJ = 125C 25C VCE = 1.0 V VCE = 5.0 V 0.2 0.3 0.5 0.7 1.0 3.0 2.0 5.0 7.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 70 100 Figure 1. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 IC = 1.0 mA 10 mA 30 mA 100 mA Figure 2. Collector Saturation Region http://onsemi.com 3 2N4410 101 IC, COLLECTOR CURRENT ( A) 100 10-1 10-2 10-3 10-4 10-5 0.4 0.3 VCE = 30 V TJ = 125C 75C REVERSE 25C IC = ICES FORWARD 0.2 0.1 0 0.1 0.2 0.3 0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) 0.5 0.6 Figure 3. Collector Cut-Off Region V, TEMPERATURE COEFFICIENT (mV/C) 1.0 0.8 V, VOLTAGE (VOLTS) 0.6 0.4 0.2 TJ = 25C 2.5 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 qVB for VBE(sat) qVC for VCE(sat) TJ = -55C to +135C VBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 Figure 4. "On" Voltages Figure 5. Temperature Coefficients 100 70 50 C, CAPACITANCE (pF) 10.2 V Vin 10 s INPUT PULSE tr, tf 10 ns DUTY CYCLE = 1.0% 0.25 F VBB -8.8 V 100 RB 5.1 k Vin 100 1N914 VCC 30 V 3.0 k RC Vout 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 Cibo TJ = 25C Cobo Values Shown are for IC @ 10 mA 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Switching Time Test Circuit Figure 7. Capacitances http://onsemi.com 4 2N4410 1000 500 300 t, TIME (ns) 200 100 50 30 20 10 0.2 0.3 0.5 td @ VEB(off) = 1.0 V VCC = 120 V tr @ VCC = 30 V IC/IB = 10 TJ = 25C tr @ VCC = 120 V 5000 3000 2000 1000 500 300 200 100 100 200 50 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 IC, COLLECTOR CURRENT (mA) 100 200 ts @ VCC = 120 V tf @ VCC = 120 V tf @ VCC = 30 V IC/IB = 10 TJ = 25C 1.0 2.0 3.0 5.0 10 20 30 50 IC, COLLECTOR CURRENT (mA) Figure 8. Turn-On Time t, TIME (ns) Figure 9. Turn-Off Time http://onsemi.com 5 2N4410 PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- K XX G H V 1 D J C SECTION X-X N N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR DIM A B C D G H J K L N P R V http://onsemi.com 6 2N4410 Notes http://onsemi.com 7 2N4410 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 2N4410/D |
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