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045CT RS0279E ATTINY23 EL6290CJ XC7S6 MAX2451 1N6276CL 12018
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  Datasheet File OCR Text:
 2N918
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The 2N918 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications.
PACKAGE STYLE TO-72
MAXIMUM RATINGS
IC VCE PDISS TJ TSTG 50 mA 15 V 300 mW @ TC = 25 C 200 mW @ TC = 25 C -65 C to +200 C -65 C to +200 C
O O O O O O
1 = EMITTER
2 = BASE
3 = COLLECTOR
4 = CASE
CHARACTERISTICS
SYMBOL
BVCEO BVCBO ICBO BVEBO hFE VCE(SAT) VBE(SAT) ft Cob Cib NF Gpe Pout
TC = 25 C
O
NONE
TEST CONDITIONS
IC = 3.0 mA IC = 1.0 A VCB = 15 V VCB = 15 V IE = 10 A VCE = 1.0 V IC = 10 mA IC = 10 mA VCE = 10 V VCB = 0 V VCB = 10 V VEB = 0.5 V VCE = 6.0 V VCB = 12 V VCB = 15 V IC = 1.0 mA IC = 6.0 mA IC = 8.0 mA IC = 3.0 mA IB = 1.0 mA IB = 1.0 mA IC = 4.0 mA f = 100 MHz f = 140 KHz f = 140 KHz f = 140 KHz f = 60 MHz f = 200 MHz f = 500 MHz TA = 150 C
O
MINIMUM TYPICAL MAXIMUM
15 30 0.01 1.0 3.0 20 0.4 1.0 600 3.0 1.7 2.0 6.0 15 30 25
UNITS
V V A V --V V MHz pF pF dB dB mW %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1


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