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| 2SB1590K Transistors Power Transistor (-15V, -1A) 2SB1590K Features 1) Low saturation voltage, VCE(sat) = -0.3V (Max.) at IC / IB = -0.4A / -20mA. 2) IC = -1A 3) Complements the 2SD2444K. External dimensions (Unit : mm) SMT3 2.9 0.4 (3) 1.1 0.8 0.95 0.95 Type Package hFE Marking Code Basic ordering unit (pieces) 2SB1590K SMT3 Q BK T146 3000 (1)Emitter (2)Base (3)Collector 0.15 1.9 Each lead has same dimensions Denotes hFE Absolute maximum ratings (Ta=25C) Parameter Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits -15 -15 -6 -1 -2 0.2 150 -55 to +150 Unit V V V A (DC) A (pw=10ms) W Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature C C Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE1 hFE2 fT Cob Min. -15 -15 -6 - - - 120 80 - - Typ. - - - - - - - - 200 15 Max. - - - -0.5 -0.5 -0.3 270 - - - Unit V V V A A V - - MHz pF IC=-50A IC=-1mA IE=-50A VCB=-12V VEB=-5V Conditions IC=-0.4A, IB=-20mA VCE/IC=-2V/-0.5A VCE=-2V, IC=-800mA VCE=-2V, IE=50mA, f=100MHz VCB=-10V, IE=0A, f=1MHz Rev.A 0.3Min. Packaging specification and hFE (2) (1) 1.6 2.8 1/2 2SB1590K Transistors Electrical characteristic curves POWER DISSIPATION : PC / PC Max. (%) -1 100 1.0 COLLECTOR CURRENT : IC (A) -500m -200m -100m -50m -20m -10m -5m -2m -1m 0 COLLECTOR CURRENT : IC (A) Ta=25C VCE=-2V Ta=25C -10mA -9mA -8mA -7mA 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -6mA 75 Ta=100C 25C -40C -5mA -4mA -3mA -2mA 50 25 IB=-1mA 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta (C) -0.5 -1.0 -1.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter output characteristics Fig.2 Grounded emitter propagation characteristics Fig.3 Grounded emitter output characteristics 1k 500 DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 200 100 50 VCE=-5V -2V -1V 500 Ta=100C 25C -40C COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) Ta=25C 1k VCE=-2V 1V 500 200 100 50 20 10 5 2 1 -1m -2m Ta=25C 200 100 50 lC/lB=50 20 10 20 10 -1m -2m 20 10 -1m -2m -5m -10m -20m -50m-100m -200m -500m -1 -5m -10m -20m -50m -100m-200m -500m -1 COLLECTOR CURRENT : lC (A) -5m -10m -20m -50m-100m-200m -500m -1 COLLECTOR CURRENT : lC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC collector gain vs. collector current ( ) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) lC/lB=20 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) -1V -500 -200 -100 -50 -20 -10 -5 -2 -1 1m 2m 5m 10m 20m 1000 1000 500 200 100 50 20 10 5 2 1 -0.1 -0.2 -0.5 -1 -2 TRANSITION FREQUENCY : fT (MHz) Ta=25C VCE= -2V 500 Ta=25C f=1MHz lE=0A Ta=100C 25C -40C 200 100 50 20 10 10m 50m 100m 200m 500m 1 20m 50m 100m 200m 500m 1 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (A) EMITTER CURRENT : lE (A) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) Fig.8 Transition frequency vs. emitter current Fig.9 Collector output capacitance vs. collector-base voltage Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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