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| Transistor 2SC4782 Silicon NPN epitaxial planer type For high speed switching Unit: mm s Features q q q 2.8 -0.3 0.650.15 +0.2 +0.25 1.5 -0.05 0.650.15 2 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature VCBO VCES VEBO ICP IC PC Tj Tstg 25 20 5 300 200 200 150 -55 ~ +150 V V V mA mA mW C C 1:Base 2:Emitter 3:Collector JEDEC:TO-236 EIAJ:SC-59 Mini Type Package Marking symbol : DV s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Turn-off time Storage time (Ta=25C) Symbol ICBO IEBO hFE * Conditions VCB = 10V, IE = 0 VEB = 4V, IC = 0 VCE = 1V, IC = 10mA IC = 10mA, IB = 1mA IC = 10mA, IB = 1mA VCB = 10V, IE = -10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz Refer to the measurment circuit min typ 0 to 0.1 Parameter Symbol Ratings Unit 0.1 to 0.3 0.40.2 0.8 (Ta=25C) 1.1 -0.1 s Absolute Maximum Ratings max 0.1 0.1 0.16 -0.06 +0.2 +0.1 0.4 -0.05 High-speed switching. Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.95 2.9 -0.05 1 1.90.2 +0.2 0.95 3 +0.1 1.45 Unit A A 40 0.17 0.76 200 500 2 17 15 7 200 0.25 1.0 V V MHz 4 pF ns ns ns VCE(sat) VBE(sat) fT Cob ton toff tstg *h FE Rank classification Rank hFE Marking Symbol P 40 ~ 80 DVP Q 60 ~ 120 DVQ R 90 ~ 200 DVR 1 Transistor Switching time measurement circuit ton, toff Test Circuit 0.1F Vout 220 Vin=10V 50 3.3k 3.3k Vbb= -3V 50 Vin=10V VCC=3V 500 50 Vbb=2V VCC=10V A 910 0.1F 500 90 2SC4782 PC -- Ta tstg Test Circuit 0.1F 1k Vout 240 Collector power dissipation PC (mW) 200 160 120 80 Vin Vout 10% 90% Vin Vout 10% 90% 0 Vin 10% 10% tstg (Waveform at A) 40 Vout ton toff 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 120 Ta=25C 100 IB=3.0mA 2.5mA 80 2.0mA 1.5mA 60 1.0mA 100 30 10 3 1 0.3 0.1 0.03 0.01 1 3 VCE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 100 30 10 3 1 0.3 0.1 0.03 0.01 10 30 100 300 1000 1 3 VBE(sat) -- IC IC/IB=10 Collector current IC (mA) Ta=-25C 25C 75C 25C Ta=75C -25C 40 0.5mA 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) hFE -- IC 240 VCE=1V 1200 fT -- I E Collector output capacitance Cob (pF) VCB=10V Ta=25C f=200MHz 6 Cob -- VCB IE=0 f=1MHz Ta=25C Forward current transfer ratio hFE 200 Transition frequency fT (MHz) 1000 5 160 800 4 120 Ta=75C 80 25C -25C 40 600 3 400 2 200 1 0 0.1 0.3 1 3 10 30 100 0 -1 0 -3 -10 -30 -100 -300 -1000 1 3 10 30 100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 2 |
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