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| 2SD2661 Transistors Low frequency amplifier transistor(12V, 2A) 2SD2661 Features Low VCE(sat) 180mV (IC / IB = 1A / 50mA) External dimensions (Unit : mm) 4.0 1.0 1.5 0.4 2.5 0.5 (1) (2) 3.0 0.5 (3) 1.5 0.4 1.6 0.4 1.5 ROHM : MPT3 JEITA : SC-62 JEDEC: SOT-89 Abbreviated symbol : FW Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power dissipation Junction temperature Storage temperature + + Packaging specifications Unit V V V A(DC) 1 A(Pulse) mW W C C Package Type Code Basic ordering unit (pieces) 2SD2661 Taping T100 1000 Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 15 12 6 2 4 500 2 2 150 -55 to +150 1 PW=1ms Single Pulse 2 Mounted on a 40 40 0.7mm ceramic substrcte Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 15 12 6 - - 270 - - - Typ. - - - - - - 90 360 20 Max. - - - 100 100 680 180 - - Unit V V V nA nA - mV MHz pF Conditions IC=10A IC=1mA IE=10A VCB=15V VEB=6V VCE=2V, IC=200mA IC / IB=1A / 50mA VCE=2V, IE=-200mA, f=100MHz VCB=10V, IE=0A, f=1MHz Rev.A 4.5 (1)Base (2)Collector (3)Emitter 1/2 2SD2661 Transistors Electrical characteristic curves VCE=2V Pulsed 1 DC CURRENT GAIN : hFE Ta=100C Ta=25C Ta=-40C VCE=2V Pulsed COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 10 1000 1 Ta=25C COLLECTOR CURRENT : IC (A) Pulsed 0.1 Ta=100C Ta=25C 0.1 Ta=-40C 100 IC/IB=50 0.01 IC/IB=20 IC/IB=10 0.01 0.001 0 0.5 1 1.5 10 0.001 0.01 0.1 1 10 0.001 0.001 0.01 0.1 1 10 BASE TO EMITTER CURRENT : VBE (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 Grounded emitter propagation characteristics Fig.2 DC current gain vs. collector current Fig.3 Collector-emitter saturation voltage vs. collector current COLLECTOR TO EMITTER SATURATION VOLTAGE : VCE(sat) (V) Ta=25C TRANSITION FREQUENCY : fT (MHz) IC/IB=20 Pulsed EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1 1000 Ta=25C VCE=2V f=100MHz 1000 Ta=25C IE=0A f=1MHz Cib 0.1 Ta=100C Ta=-40C 100 100 0.01 10 Cob 0.001 0.001 0.01 0.1 1 10 10 -0.001 -0.01 -0.1 -1 -10 COLLECTOR CURRENT : IC (A) EMITTER CURRENT : IE (A) 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.4 Base-emitter saturation voltage vs. collector current Fig.5 Gain bandwidth product vs. emitter current Fig.6 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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