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Power Transistors
2SD0946 (2SD946), 2SD0946A (2SD946A), 2SD0946B (2SD946B)
Silicon NPN epitaxial planar type darlington
For low-frequency amplification Features
* Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer. * A shunt resistor is omitted from the driver.
3.160.1 8.0+0.5 -0.1
Unit: mm
3.20.2
3.80.3
11.00.5
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) 2SD0946 2SD0946A 2SD0946B Collector-emitter voltage 2SD0946 (Base open) 2SD0946A 2SD0946B Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature VEBO IC ICP PC Tj Tstg VCEO Symbol VCBO Rating 30 60 100 25 50 80 5 1 1.5 1.2 150 -55 to +150 V A A W C C
B
1 2 3 0.750.1
1.90.1
Unit V
0.50.1 0.50.1 1.760.1 2.30.2
V
4.60.2
16.01.0
1: Emitter 2: Collector 3: Base TO-126B-A1 Package
Internal Connection
C
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base voltage (Emitter open) 2SD0946 2SD0946A 2SD0946B Collector-emitter voltage (Base open) 2SD1263 2SD0946A 2SD0946B Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio *1, 2 Collector-emitter saturation voltage Base-emitter saturation voltage *1 Transition frequency
*1
200
E
Symbol VCBO
Conditions IC = 100 A, IE = 0
Min 30 60 100
Typ
Max
3.050.1
Unit V
VCEO
IC = 1 mA, IB = 0
25 50 80
V
VEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT
IE = 100 A, IC = 0 VCB = 25 V, IE = 0 VEB = 4 V, IC = 0 VCE = 10 V, IC = 1 A IC = 1 A, IB = 1 mA IC = 1 A, IB = 1 mA VCB = 10 V, IE = -50 mA, f = 200 MHz
5 0.1 0.1 4 000 40 000 1.8 2.2 150
V A A V V MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE Q R S
4 000 to 10 000 8 000 to 20 000 16 000 to 40 000 Note) The part numbers in the parenthesis show conventional part number.
Publication date: May 2003
SJD00164BED
1
2SD0946, 2SD0946A, 2SD0946B
PC Ta
Collector-emitter saturation voltage VCE(sat) (V)
1.6 Without heat sink
VCE(sat) IC
10
VBE(sat) IC
Base-emitter saturation voltage VBE(sat) (V)
IC/IB=1000
IC/IB=1000 10
Collector power dissipation PC (W)
1.2
TC=-25C 1 25C 100C
1
TC=-25C 100C 25C
0.8
0.1
0.1
0.4
0
0
40
80
120
160
0.01 0.01
0.1
1
0.01 0.01
0.1
1
Ambient temperature Ta (C)
Collector current IC (A)
Collector current IC (A)
hFE IC
Collector output capacitance C (pF) (Common base, input open circuited) ob
VCE=10V
Cob VCB
24
IE=0 f=1MHz TC=25C
105
Forward current transfer ratio hFE
20
104
25C TC=100C
16
12
-25C
103
8
4
102 0.01
0.1
1
0
1
10
100
Collector current IC (A)
Collector-base voltage VCB (V)
2
SJD00164BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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