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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3307 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3307 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3307 PACKAGE TO-3P FEATURES * Super low on-state resistance: RDS(on)1 = 9.5 m MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 14 m MAX. (VGS = 4.0 V, ID = 35 A) * Low Ciss: Ciss = 4650 pF TYP. * Built-in gate protection diode (TO-3P) ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 VDSS VGSS(AC) ID(DC) ID(pulse) PT1 PT2 Tch Tstg Note2 Note2 60 20 70 280 120 3.0 150 -55 to +150 45 202 V V A A W W C C A mJ Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy IAS EAS Notes 1. PW 10 s, Duty cycle 1% 2. Starting Tch = 25C, RG = 25 , VGS = 20 V 0 V THERMAL RESISTANCE Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 1.04 41.7 C/W C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14129EJ3V0DS00 (3rd edition) Date Published March 2001 NS CP(K) Printed in Japan The mark 5 shows major revised points. (c) 1999, 2000 2SK3307 ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr IF = 70 A, VGS = 0 V IF = 70 A, VGS = 0 V, di/dt = 100 A/s ID = 70 A , VDD = 48 V, VGS = 10 V ID = 35 A, VGS(on) = 10 V, VDD = 30 V, RG = 10 TEST CONDITIONS VDS = 60 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 35 A VGS = 10 V, ID = 35 A VGS = 4.0 V, ID = 35 A VDS = 10 V, VGS = 0 V, f = 1 MHz 1.5 30 2.0 47 7.5 10.5 4650 780 380 90 1260 270 370 90 14 24 1.0 60 110 9.5 14 MIN. TYP. MAX. 10 10 2.5 UNIT A A V S m m pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG. VGS = 20 0 V BVDSS VDS VGS 0 50 L VDD TEST CIRCUIT 2 SWITCHING TIME D.U.T. RL PG. RG VDD ID 90% 90% VGS VGS Wave Form 0 10% VGS(on) 90% IAS ID VDD ID ID Wave Form 0 10% 10% = 1 s Duty Cycle 1% td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA 50 RL VDD PG. 2 Data Sheet D14129EJ3V0DS 2SK3307 TYPICAL CHARACTERISTICS (TA = 25C ) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 175 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 80 60 40 20 0 150 125 100 75 50 25 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Tch - Channel Temperature - C TC - Case Temperature - C 5 1000 FORWARD BIAS SAFE OPERATING AREA ID(pulse) PW 10 0 s ID - Drain Current - A 100 S RD t VGS (a d ite im 0 V) )L (on =1 10 ms Po Lim wer D ite DC iss d ipa tio n 10 1m s =1 0 s 1 TC = 25C 0.1 Single Pulse 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - C/W 100 Rth(ch-A) = 41.7 C/W 10 1 Rth(ch-C) = 1.04 C/W 0.1 0.01 10 Single Pulse 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D14129EJ3V0DS 3 2SK3307 FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed ID - Drain Current - A 300 250 200 150 100 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS =10 V ID - Drain Current - A 100 10 1 TA = -50C 25C 75C 150C 4.0 V 50 0 0 1 2 3 0.1 1 2 3 4 VDS = 10 V 6 5 Pulsed 4 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - m FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 20 Pulsed | yfs | - Forward Transfer Admittance - S 100 VDS = 10 V Pulsed 10 TA = 150C 75C 25C -50C 1 10 ID = 35 A 0.1 0.1 0 0 5 10 15 20 VGS - Gate to Source Voltage - V 1 10 100 ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 30 Pulsed 3 GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate Cut-off Voltage - V 2.5 2 1.5 1 0.5 0 -50 VDS = 10 V ID = 1 mA 20 VGS = 4.0 V 10 10 V 0 0.1 1 10 100 1000 0 50 100 150 ID - Drain Current - A Tch - Channel Temperature - C 4 Data Sheet D14129EJ3V0DS 2SK3307 RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 25 ISD - Diode Forward Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 Pulsed Pulsed 20 VGS = 4.0 V 15 10 VGS = 10 V 100 VGS = 0 V 10 10 V 5 0 ID = 35 A -50 0 50 100 150 Tch - Channel Temperature - C 1 0 0.4 0.8 1.2 1.6 2.0 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100000 SWITCHING CHARACTERISTICS 10000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF VGS = 0 V f = 1 MHz tr 1000 td(off) 100 td(on) 10 0.1 10000 Ciss 1000 tf Coss Crss 100 0.1 1 10 100 1 10 100 VDS - Drain to Source Voltage - V ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 trr - Reverse Recovery Time - ns VDS - Drain to Source Voltage - V di/dt = 100 A/s VGS = 0 V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 10 VGS - Gate to Source Voltage - V 80 60 VDD = 48 V 30 V 12 V VGS 8 100 6 40 4 10 20 0 0 20 VDS 40 60 2 ID = 70 A 0 100 120 140 160 1 0.1 1.0 10 100 80 IF - Drain Current - A QG - Gate Charge - nC Data Sheet D14129EJ3V0DS 5 2SK3307 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 1000 IAS - Single Avalanche Current - A Energy Derating Factor - % 160 140 120 100 80 60 40 20 SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = 30 V RG = 25 VGS = 20 V 0 V IAS 45 A 100 IAS = 45 A EAS =2 02 m 10 VDD = 30 V RG = 25 VGS = 20 V 0 V 100 1m J 1 10 10 m 0 25 50 75 100 125 150 L - Inductive Load - H Starting Tch - Starting Channel Temperature - C 6 Data Sheet D14129EJ3V0DS 2SK3307 PACKAGE DRAWING (Unit: mm) TO-3P (MP-88) 15.7 MAX. 1.0 3.20.2 4.7 MAX. 1.5 EQUIVALENT CIRCUIT Drain 20.00.2 6.0 4.50.2 7.0 4 Gate Body Diode 1 19 MIN. 3.00.2 2 3 Gate Protection Diode Source 2.20.2 5.45 1.00.2 0.60.1 5.45 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.80.1 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D14129EJ3V0DS 7 2SK3307 * The information in this document is current as of March, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 |
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