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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3715
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3715 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SK3715 PACKAGE Isolated TO-220
FEATURES
* Super low on-state resistance RDS(on)1 = 6.0 m MAX. (VGS = 10 V, ID = 38 A) RDS(on)2 = 9.5 m MAX. (VGS = 4 V, ID = 38 A) * Low C iss: C iss = 8400 pF TYP. * Built-in gate protection diode (Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
60 20 75 300 40 2.0 150 -55 to +150 67 450
V V A A W W C C A mJ
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 30 V, RG = 25 , VGS = 20 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D16378EJ2V0DS00 (2nd edition) Date Published August 2003 NS CP(K) Printed in Japan
The mark
shows major revised points.
2002
2SK3715
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2
TEST CONDITIONS VDS = 60 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 38 A VGS = 10 V, ID = 38 A VGS = 4 V, ID = 38 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 30 V, ID = 38 A VGS = 10 V RG = 0
MIN.
TYP.
MAX. 10 10
UNIT
A A
V S
1.5 33
2.0 65 4.8 6.1 8400 1200 530 24 15 116 11
2.5
Drain to Source On-state Resistance
6.0 9.5
m m pF pF pF ns ns ns ns nC nC nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
VDD = 48 V VGS = 10 V ID = 75 A IF = 75 A, VGS = 0 V IF = 50 A, VGS = 0 V di/dt = 50 A/s
145 21 39 0.92 59 136 1.5
V ns nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
RL VDD
VGS VGS
Wave Form
0
10%
VGS
90%
VDS
90% 90% 10% 10%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS VDS
Wave Form
0
td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D16378EJ2V0DS
2SK3715
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - %
120
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
50
100
PT - Total Power Dissipation - W
0 25 50 75 100 125 150 175
40
80
30
60
20
40
20
10
0
0 0 25 50 75 100 125 150 175
TC - Case Temperature - C
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA
1000 100 ID(DC) RDS(on) Limited (at VGS = 10 V)
ID(pulse)
ID - Drain Current - A
10 1
0.1 0.01 0.1
DC PW = 100 s 1 ms 10 ms
Single pulse TC = 25C 1 10 100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
rth(t) - Transient Thermal Resistance - C/W
Rth(ch-A) = 62.5C/W 10
Rth(ch-C) = 3.13C/W 1
0.1
Single pulse 0.01 100
1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
Data Sheet D16378EJ2V0DS
3
2SK3715
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
350 Pulsed 300
FORWARD TRANSFER CHARACTERISTICS
1000 100
VDS = 10 V Pulsed
ID - Drain Current - A
VGS = 10 V 250 200 150 100 50 0 0 0.5 1 1.5 2 2.5 4.0 V
ID - Drain Current - A
10 1 0.1 0.01 0.001 0
Tch = 150C 85C 25C -55C
1
2
3
4
5
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
3
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S
100 Tch = -50C 25C 85C 150C
VGS(off) - Gate Cut-off Voltage - V
VDS = 10 V ID = 1 m A
2.5 2 1.5 1 0.5 0 -75 -50 -25 0 25 50 75 100 125 150 175
10
VDS = 10 V Pulsed 1 0.1 1 10 100
Tch - Channel Temperature - C
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
20 18 16 14 12 10 8 6 4 2 0 1 10 100 10 V VGS = 4.0 V
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
10 Pulsed 8 6 ID = 38 A 4 2 0 0 10
VGS - Gate to Source Voltage - V
1000
20
ID - Drain Current - A
4
Data Sheet D16378EJ2V0DS
2SK3715
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
12 10 VGS = 4 V 8 6 10 V 4 2 0 -50 -25 0 25 50 75 100 125 150 ID = 38 A Pulsed
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss, Coss, Crss - Capacitance - pF
C iss
C oss 1000
C rss VGS = 0 V f = 1 MHz 100 0.1 1 10 100
Tch - Channel Temperature - C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50 10 9 V DD = 48 V 30 V 12 V 8 V GS 7 6 5 4 3 2 V DS 5 0 ID = 7 5 A 0 20 40 60 80 100 120 140 160 1 0
VDS - Drain to Source Voltage - V
45 40 35 30 25 20 15 10
100
td(off) td(on)
10
tr
tf
1 0.1 1 10 100
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000 VGS = 10 V 100 4V 10 0V
REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT
1000 di/dt = 50 A/s VGS = 0 V
trr - Reverse Recovery Time - ns
IF - Diode Forward Current - A
100
1
0.1 Pulsed 0.01 0 0.5 1 1.5
10 0.1 1 10 100
VF(S-D) - Source to Drain Voltage - V
IF - Diode Forward Current - A
Data Sheet D16378EJ2V0DS
5
VGS - Gate to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
VDD = 30 V VGS = 10 V RG = 0
2SK3715
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD
100
SINGLE AVALANCHE ENERGY DERATING FACTOR
100 VDD = 30 V RG = 25 VGS = 20 0 V IAS 67 A
IAS - Single Avalanche Current - A
IA S = 6 7 A EAS = 450 m J
Energy Derating Factor - %
80
60
10
40
VDD = 30 V R G = 25 VGS = 20 0 V S ta rtin g T c h = 2 5 C S in g le p u ls e
20
1
10
100
0
1m
10 m
25
50
75
100
125
150
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D16378EJ2V0DS
2SK3715
PACKAGE DRAWING (Unit: mm)
Isolated TO-220 (MP-45F)
10.0 0.3 4.5 0.2
3.2 0.2
2.7 0.2
15.0 0.3
3 0.1 4 0.2
13.5 MIN.
12.0 0.2
0.7 0.1 2.54
1.3 0.2 1.5 0.2 2.54
2.5 0.1 0.65 0.1
1. Gate 2. Drain 3. Source 123
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Gate Protection Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Data Sheet D16378EJ2V0DS
7
2SK3715
* The information in this document is current as of August, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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