View 3N60L-B-TA3-T_1199588.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

UNISONIC TECHNOLOGIES CO., LTD 3N60
3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
1 TO-220
Power MOSFET
FEATURES
* RDS(ON) = 3.6 @VGS = 10 V * Ultra low gate charge ( typical 10 nC ) * Low reverse transfer capacitance ( CRSS = typical 5.5 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
*Pb-free plating product number: 3N60L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Order Number Normal Lead Free Plating 3N60-x-TA3-T 3N60L-x-TA3-T Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube
3N60L-x-TA3-T (1)Packing Type (2)Package Type (3)Drain-Source Voltage (4)Lead Plating (1) T: Tube (2) TA3: TO-220 (3) A: 600V, B: 650V (4) L: Lead Free Plating Blank: Pb/Sn ,
www.unisonic.com.tw Copyright (c) 2007 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-110,A
3N60
ABSOLUTE MAXIMUM RATINGS (TC = 25 , unless otherwise specified)
PARAMETER SYMBOL 3N60-A 3N60-B
Power MOSFET
RATINGS UNIT 600 V Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS 30 V Avalanche Current - (Note 1) IAR 3.0 A TC = 25C 3.0 A Continuous Drain Current ID TC = 100C 1.9 A Pulsed Drain Current, TP Limited by TJMAX - (Note 1) IDM 12 A Avalanche Energy, Single Pulsed (Note 2) EAS 200 mJ Avalanche Energy, Repetitive, Limited by TJMAX EAR 7.5 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Power Dissipation PD 75 W Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER Junction-to-Case Junction-to-Ambient SYMBOL JC JA TYP MAX 1.67 62.5 UNIT C/W C/W
ELECTRICAL CHARACTERISTICS (TC =25 , unless otherwise specified)
PARAMETER Off Characteristics Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse 3N60-A 3N60-B SYMBOL BVDSS IDSS IGSS BVDSS/ VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QDD TEST CONDITIONS VGS = 0 V, ID = 250 A VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V TJ ID = 250 A, Referenced to 25C VDS = VGS, ID = 250 A VGS = 10 V, ID = 1.5A 2.0 2.8 350 50 5.5 10 30 20 30 10 2.7 4.9 0.6 4.0 3.6 450 65 7.5 30 70 50 70 13 MIN TYP MAX UNIT 600 650 10 100 100 -100 V V A A nA nA V/ V pF pF pF ns ns ns ns nC nC nC
Breakdown Voltage Temperature Coefficient On Characteristics Gate Threshold Voltage Drain-Source On-State Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDS = 25 V, VGS = 0 V, f = 1MHz
VDD = 300V, ID = 3.0 A, RG = 25 (Note 4, 5)
VDS= 480V,ID= 3.0A, VGS= 10 V (Note 4, 5)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-110,A
3N60
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS Source- Drain Diode Ratings and Characteristics Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 3.0 A Maximum Continuous Drain-Source IS Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0 V, IS = 3.0 A, dIF/dt = 100 A/s (Note 4) Reverse Recovery Charge QRR Notes: 1. Repetitive Rating : Pulse width limited by TJ 2. L = 40mH, IAS = 3.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 3.0A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
Power MOSFET
MIN
TYP MAX UNIT 1.4 3.0 12 210 1.2 V A A ns C
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-110,A
3N60
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+ VDS -
+ L
RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * I SD controlled by pulse period * D.U.T.-Device Under Test VDD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS (Driver)
P.W.
Period
D=
P. W. Period
VGS= 10V
I FM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt
Body Diode Recovery dv /dt VDS (D.U.T.) VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 8
QW-R502-110,A
3N60
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL VDD
Power MOSFET
VDS VGS RG
VDS
90%
10V
Pulse Width 1 s Duty Factor 0.1%
D.U.T.
VGS
10%
t D(ON ) tR tD (OFF) tF
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
50k 12V 0.2 F 0.3 F
Same Type as D.U.T. 10V VDS QGS
QG
QGD
VGS DUT 3mA VGS
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L VDS BVDSS
RD
VDD D.U.T.
10V tp
IAS
tp
Time
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 8
QW-R502-110,A
3N60
TYPICAL CHARACTERISTICS
Breakdown Voltage Variation vs . Junction Temperature
Power MOSFET
On-Resistance Variation vs. Junction Temperature
Drain-Source Breakdown Voltage, BVDSS (Normalized)
Drain-Source On-Resistance, RDS(ON) (Normalized)
1.2 1.1 1.0 0.9 0.8 -100 Note: 1. VGS =0V 2. I D=250A -50 0 50 100 150 200 Junction Temperature, T J ( )
Maximum Safe Operating Area
Operation in This Area is Limited by R DS(on )
3.0 2.5 2.0 1.5 1.0 0.5 Note: 1. VGS=10V 2. ID=4A
0.0 -100 -50 0 50 100 150 200 Junction Temperature TJ ( ) ,
Maximum Drain Current vs. Case Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0 25 150 50 75 100 125 Case Temperature, TC ( )
Transfer Characteristics 10
Drain Current, ID (A)
10
100s 1ms 10ms
1
DC Notes: 1 . T J=25 2 . T J=150 3 . Single Pulse
0.1 1 10 100 1000 Drain-Source Voltage, VDS (V)
On-State Characteristics 10
Drain Current, ID (A)
V GS 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V Bottorm :5.5V Top :
Drain Current, I D (A)
Drain Current, I D (A)
1
150 1 25 55
Notes: 1. VDS=50V 2. 250s Pulse Test
0.1
Notes: 1. 250s Pulse Test 2. TC=25
0.1 2
0.1
1 10 Drain-to-Source Voltage, VDS (V)
4 6 8 10 Gate-Source Voltage, VGS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 8
QW-R502-110,A
3N60
TYPICAL CHARACTERISTICS(Cont.)
On-Resistance Variation vs . Drain Current and Gate Voltage Drain-Source On-Resistance, RDS(ON) () Reverse Drain Current, I DR (A) 6 5 4 3 2 1 0
Note: TJ =25
Power MOSFET
On State Current vs. Allowable Case Temperature 10
VGS=20V VGS =10V
150 1
25
0
2
4
6
8
10
12
Drain Current, ID (A)
Capacitance Characteristics (Non-Repetitive) 600 500
0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Source-Drain Voltage VSD (V) ,
Gate Charge Characteristics
Notes: 1. VGS=0V 2. 250s Test
Gate-Source Voltage, VGS (V)
CISS =CGS +CGD (CDS=shorted ) COSS =CDS+CGD CRSS=CGD
12 10 8 6 4 2 0
VDS=300V VDS=480V VDS=120V
Capacitance (pF)
400 300 200 100 0 0.1
C ISS C OSS
Notes: 1. VGS =0V 2. f = 1MHz
CRSS
Note: ID=3.0A 0 2 4 6 8 10 Total Gate Charge, QG (nC)
1 10 Drain-SourceVoltage VDS (V) ,
Transient Thermal Response Curve
Thermal Response, JC (t)
1
D=0.5 0.2
0.1
0.1 0.05 0.02 0.01 Single Pulse Notes : 1. JC (t) = 1.18 /W Max. 2. Duty Factor , D=t 1/t2 3.TJM-TC=PDM x JC (t)
0.01 10-5 10-4 10-3
10-2
10-1
100
101
Square Wave Pulse Duration t 1 (sec) ,
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 8
QW-R502-110,A
3N60
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
8 of 8
QW-R502-110,A

▲Up To Search▲

Price & Availability of 3N60L-B-TA3-T

	To Download 3N60L-B-TA3-T Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .