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| 6MBI35S-120 IGBT MODULE ( S series) 1200V / 35A 6 in one-package Features * Compact package * P.C.board mount * Low VCE(sat) IGBT Modules Applications * Inverter for motor drive * AC and DC servo drive amplifier * Uninterruptible power supply * Industrial machines, such as welding machines Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous Tc=25C current Tc=80C 1ms Tc=25C Tc=80C 1ms Max. power dissipation (1 device) Operating temperature Storage temperature Isolation voltage Screw torque Symbol VCES VGES IC IC pulse -IC -IC pulse PC Tj Tstg Vis Mounting *1 Rating 1200 20 50 35 100 70 35 70 240 +150 -40 to +125 AC 2500 (1min.) 3.5 Unit V V A A A A W C C V N*m Equivalent Circuit Schematic 1 3 (P ) 1 (G u ) 5 (G v) 9 (G w ) 2 (E u) 1 6 (U ) 6 (E v) 1 5 (V ) 1 0 (E w) 1 4 (W ) 3 (G x) 7 (G y) 1 1 (G z) 4 (E x ) 1 7 (N ) 8 (E y) 1 2 (E z) *1 : Recommendable value : 2.5 to 3.5 N*m (M5) Electrical characteristics (Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr tr(i) toff tf VF trr Characteristics Min. Typ. - - - - 5.5 7.2 - 2.3 - 2.8 - 4200 - 875 - 770 - 0.35 - 0.25 - 0.1 - 0.45 - 0.08 - 2.5 - 2.0 - - Conditions Max. 1.0 0.2 8.5 2.65 - - - - 1.2 0.6 - 1.0 0.3 3.3 - 0.35 VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=35mA Tj=25C VGE=15V, IC=35A Tj=125C VGE=0V VCE=10V f=1MHz VCC=600V IC=35A VGE=15V RG=33 Tj=25C Tj=125C IF=35A IF=35A, VGE=0V Unit mA A V V pF s Turn-off time Diode forward on voltage Reverse recovery time V s Thermal resistance characteristics Item Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. - - - - - 0.05 Conditions Max. 0.52 0.90 - IGBT FWD the base to cooling fin C/W C/W C/W Unit Thermal resistance *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound 6MBI35S-120 Characteristics Collector current vs. Collector-Emitter voltage Tj= 25 C (typ.) 80 VGE= 20V 15V 12V 80 o IGBT Modules Collector current vs. Collector-Emitter voltage Tj= 125 C (typ.) VGE= 20V 15V 12V o 60 Collector current : Ic [ A ] Collector current : Ic [ A ] 60 10V 40 10V 40 20 20 8V 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 80 Tj= 25 C o Collector-Emitter voltage vs. Gate-Emitter voltage 10 Tj= 25 C (typ.) o Tj= 125 C o 8 Collector - Emitter voltage : VCE [ V ] 60 Collector current : Ic [ A ] 6 40 4 Ic= 70A 2 Ic= 35A Ic= 17.5A 20 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25 C 10000 1000 o Dynamic Gate charge (typ.) Vcc=600V, Ic=35A, Tj= 25 C 25 o 800 Cies Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] 20 Gate - Emitter voltage : VGE [ V ] 600 15 1000 400 10 Coes Cres 200 5 100 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 0 0 100 200 Gate charge : Qg [ nC ] 300 0 400 6MBI35S-120 IGBT Modules Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) Vcc=600V,VGE=15V, Rg=33,Tj=25oC 1000 1000 Vcc=600V,VGE=15V, Rg=33,Tj=125oC toff 500 toff Switching time : ton, tr, toff, tf [ nsec ] 500 Switching time : ton, tr, toff, tf [ nsec ] ton ton tr tr tf 100 100 tf 50 0 20 40 60 Collector current : Ic [ A ] 50 0 20 40 60 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) Vcc=600V,Ic=35A,VGE=15V, Tj=25oC 5000 10 Vcc=600V,VGE=15V, Rg=33 Eon(125 C) Switching loss : Eon, Eoff, Err [ mJ/pulse ] 8 o Switching time : ton, tr, toff, tf [ nsec ] 1000 6 Eon(25 C) o 500 toff 4 Eoff(125 C) o ton tr 100 tf 50 10 50 100 ] Eoff(25o)C 2 o Err(125 C) Err(25 C) o 0 500 0 20 40 60 Gate resistance : Rg [ Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area 100 Eon Vcc=600V,Ic=35A,VGE=15V,Tj=125oC 25 +VGE=15V, -VGE<15V, Rg>33,Tj<125oC = = = 20 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 80 15 Collector current : Ic [ A ] Eoff Err 10 50 100 ] 60 10 40 5 20 0 500 Gate resistance : Rg [ 0 0 200 400 600 800 1000 1200 1400 Collector - Emitter voltage : VCE [ V ] 6MBI35S-120 Forward current vs. Forward on voltage (typ.) 80 Tj=125 C o IGBT Modules Reverse recovery characteristics (typ.) 300 Tj=25 C trr(125 C) Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] o o Vcc=600V,VGE=15V, Rg=33 60 100 trr(25 C) o 40 20 Irr(125 C) o Irr(25 C) o 0 0 1 2 3 4 10 0 10 20 30 40 50 60 Forward on voltage : VF [ V ] Forward current : IF [ A ] Transient thermal resistance 3 1 Thermal resistanse : Rth(j-c) [ C/W ] FWD IGBT o 0.1 M623 0.01 0.001 0.01 0.1 1 Pulse width : Pw [ sec ] Outline Drawings, mm 107.51 4-o6.10.3 2-o5.50.3 16.02 17 930.3 15.24 15.24 15.24 15.24 13 69.60.3 o2.50.1 27.60.3 320.3 41.91 451 + 0.5 0 1.5 930.3 A A 1.150.2 o2.10.1 Section A-A o0.4 12 11 1 3.81 3.50.5 1.50.3 16.02 11.43 11.43 11.43 11.43 11.43 20.51 2.50.3 171 6.50.5 10.2 0.80.2 Shows theory dimensions 6 |
Price & Availability of 6MBI35S-120
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