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ADVANCED LINEAR DEVICES, INC.
ALD114835/ALD114935 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD(R) VGS(th)= -3.5V MATCHED PAIR MOSFET ARRAYS
APPLICATIONS * Functional replacement of Form B (NC) relay * Zero power fail safe circuits * Backup battery circuits * Power failure detector * Fail safe signal detector * Source followers and buffers * Precision current mirrors * Precision current sources * Capacitives probes * Sensor interfaces * Charge detectors * Charge integrators * Differential amplifier input stage * High side switches * Peak detectors * Sample and Hold * Alarm systems * Current multipliers * Analog switches * Analog multiplexers * Voltage comparators * Level shifters PIN CONFIGURATION
ALD114835 N/C* 1 2 3 4 5 6 7 8 VVPC, SC PACKAGES
M1 M2
e
TM
EPAD
EN
(R)
AB
LE
D
GENERAL DESCRIPTION ALD114835/ALD114935 are monolithic quad/dual N-Channel MOSFETs matched at the factory using ALD's proven EPAD CMOS technology. These devices are intended for low voltage, small signal applications. They are excellent functional replacements for normally-closed relay applications, as they are normally on (conducting) without any power applied, but could be turned off or modulated when system power supply is turned on. These MOSFETs have the unique characteristics of, when the gate is grounded, operating in the resistance mode for low drain voltage levels and in the current source mode for higher voltage levels and providing a constant drain current. ALD114835/ALD114935 MOSFETs are designed for exceptional device electrical characteristics matching. As these devices are on the same monolithic chip, they also exhibit excellent temperature tracking characteristics. They are versatile as design components for a broad range of analog applications such as basic building blocks for current sources, differential amplifier input stages, transmission gates, and multiplexer applications. Besides matched pair electrical characteristics, each individual MOSFET also exhibits well controlled parameters, enabling the user to depend on tight design limits. Even units from different batches and different date of manufacture have correspondingly well matched characteristics. These depletion mode devices are built for minimum offset voltage and differential thermal response, and they are designed for switching and amplifying applications in single 5V to +/-5V systems where low input bias current, low input capacitance and fast switching speed are desired. These devices exhibit well controlled turn-off and sub-threshold charactersitics and therefore can be used in designs that depend on sub-threshold characteristics. The ALD114835/ALD114935 are suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources. A sample calculation of the DC current gain at a drain current of 3mA and gate input leakage current of 30pA = 100,000,000. It is recommended that the user, for most applications, connect V+ pin to the most positive voltage potential (or left open unused) and V- and N/C pins to the most negative voltage potential in the system. All other pins must have voltages within these voltage limits. FEATURES * Depletion mode (normally ON) * Precision Gate Threshold Voltages: -3.50V +/- 0.05V * Nominal RDS(ON) @VGS=0.0V of 540 * Matched MOSFET to MOSFET characteristics * Tight lot to lot parametric control * Low input capacitance * VGS(th) match (VOS) -- 20mV * High input impedance -- 1012 typical * Positive, zero, and negative VGS(th) temperature coefficient * DC current gain >108 * Low input and output leakage currents ORDERING INFORMATION Operating Temperature Range* 0C to +70C 0C to +70C 16-Pin Plastic Dip Package ALD114835PC 16-Pin SOIC Package ALD114835SC 8-Pin Plastic Dip Package ALD114935PA 8-Pin SOIC Package ALD114935SA
V-
V-
16 15 14
N/C* GN2 DN2 V+ S34 DN3 GN3 N/C*
GN1 DN1 S12 VDN4 GN4 N/C*
V+ VM4 M3
13 12 11 10 9
ALD114935 VV-
N/C*
1 2 3 4
8 7
N/C*
GN1 DN1 S12
GN2 DN2 V-
M1
M2
6 V5
PA, SA PACKAGES *N/C pins are internally connected. Connect to V- to reduce noise
* Contact factory for industrial temp. range or user-specified threshold voltage values
Rev 1.0-0506 (c)2005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286 www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, VDS Gate-Source voltage, VGS Power dissipation Operating temperature range PA, SA, PC, SC package Storage temperature range Lead temperature, 10 seconds 10.6V 10.6V 500 mW 0C to +70C -65C to +150C +260C
OPERATING ELECTRICAL CHARACTERISTICS V+ = +5V (or open) V- = -5V TA = 25C unless otherwise specified CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
ALD114835 / ALD114935 Parameter Gate Threshold Voltage Symbol VGS(th) VOS Min -3.55 Typ -3.50 Max -3.45 Unit V Test Conditions IDS =1A VDS = 0.1V
Offset Voltage VGS(th)1 - VGS(th)2 Offset Voltage Tempco GateThreshold Voltage Tempco
7
20
mV
TCVOS TCVGS(th)
5 -1.7 0.0 +1.6 12.0 3.0 1.4
V/ C mV/ C
VDS1 = VDS2 ID = 1A, VDS = 0.1V ID = 20A, VDS = 0.1V ID = 40A, VDS = 0.1V VGS = +6.0V, VDS =+5V VGS = +0.5V, VDS =+5V VGS = +0.5V VDS = +5.5V
On Drain Current
IDS (ON) GFS
mA
Forward Transconductance
mmho
Transconductance Mismatch
GFS GOS RDS (ON)
1.8
%
Output Conductance
68
mho
VGS =+0.5V VDS = +5.5V VDS = +0.1V VGS = +0.0V
Drain Source On Resistance
540
Drain Source On Resistance Tolerance Drain Source On Resistance Mismatch Drain Source Breakdown Voltage Drain Source Leakage Current1
RDS (ON)
5
%
RDS (ON) BVDSX IDS (OFF) 10
0.5
%
V
IDS = 1.0A VGS = -4.5V VGS = -4.5V, VDS =+5V TA = 125C VDS = 0V VGS = +10V TA =125C
10
100 4 30 1
pA nA pA nA pF
Gate Leakage Current1
IGSS CISS CRSS ton toff
3
Input Capacitance
2.5
Transfer Reverse Capacitance Turn-on Delay Time Turn-off Delay Time Crosstalk
0.1 10 10 60
pF ns ns dB V+ = 5V RL= 5K V+ = 5V RL= 5K f = 100KHz
Notes:
1
Consists of junction leakage currents
ALD114835/ALD114935
Advanced Linear Devices
2

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