 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| AOU405 P-Channel Enhancement Mode Field Effect Transistor General Description The AOU405 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the TO-251 package, this device is well suited for high current load applications. Standard Product AOU405 is Pb-free (meets ROHS & Sony 259 specifications). AOU405L is a Green Product ordering option. AOU405 and AOU405L are electrically identical. TO-251 D Top View Drain Connected to Tab G S G D S Features VDS (V) = -30V ID = -18A (VGS = -10V) RDS(ON) < 34m (VGS = -10V) RDS(ON) < 60m (VGS = -4.5V) Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25C Power Dissipation B Power Dissipation A TC=100C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C C Maximum -30 20 -18 -18 -40 -18 40 60 30 2.5 1.6 -55 to 175 Units V V A A mJ W W C TA=25C G TA=100C G ID IDM IAR EAR PD PDSM TJ, TSTG Symbol t 10s Steady-State Steady-State RJA RJC Typ 16.7 40 1.8 Max 25 50 2.5 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOU405 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-18A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-10A Forward Transconductance VDS=-5V, ID=-18A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C -1.2 -40 28 40 48 17 -0.76 -1 -18 920 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 190 122 3.6 18.7 VGS=-10V, VDS=-15V, ID=-18A 9.7 2.54 5.4 9 VGS=-10V, VDS=-15V, RL=0.82, RGEN=3 IF=-18A, dI/dt=100A/s 25 20 12 21.4 13 13 35 30 18 26 16 4.5 23 11.7 1100 34 47 60 -2 Min -30 -0.003 -1 -5 100 -2.4 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-18A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA A curve provides a single pulse rating. I. Revision 0: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOU405 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 -10V 30 -ID (A) -6V -4.5V 20 20 -3.5V 10 VGS=-3V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics 1.60 Normalized On-Resistance VGS=-4.5V 1.40 ID=-10A 125C 25C -ID(A) -4V 15 10 30 25 VDS=-5V 100 90 80 RDS(ON) (m) 70 60 50 40 30 20 0 5 10 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 120 100 80 RDS(ON) (m) 60 40 25C 20 0 3 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4 5 125C VGS=-10V VGS=-4.5V 1.20 VGS=-10V ID=-18A 1.00 0.80 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 ID=-18A 1.0E-01 125C -IS (A) 1.0E-02 1.0E-03 1.0E-04 25C 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AOU405 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=-15V ID=-18A Capacitance (pF) 1500 1250 Ciss 1000 750 500 Coss 250 0 0 4 8 12 16 20 0 5 10 15 20 25 30 -Qg (nC) Figure 7: Gate-Charge Characteristics -VDS (Volts) Figure 8: Capacitance Characteristics Crss 8 -VGS (Volts) 6 4 2 0 100.0 TJ(Max)=175C, TA=25C 10s 400 TJ(Max)=175C TA=25C 300 1ms 10ms Power (W) 100 200 -ID (Amps) 10.0 RDS(ON ) 1.0 DC 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK =TA+PDM.ZJA.RJA RJA=2.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOU405 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 ID(A), Peak Avalanche Current 80 tA = 12 L ID BV - V DD Power Dissipation (W) 0.0001 0.001 16 60 40 8 TA=25C 4 20 0 0.00001 0 0 25 50 75 100 125 150 175 T CASE (C) Figure 13: Power De-rating (Note B) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 20 18 16 Current rating ID(A) 14 12 10 8 6 4 2 0 0 25 50 75 100 125 150 175 T CASE (C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. |
Price & Availability of AOU405L
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |