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| AOU452 N-Channel Enhancement Mode Field Effect Transistor General Description The AOU452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU452 is Pb-free (meets ROHS & Sony 259 specifications). AOU452L is a Green Product ordering option. AOU452 and AOU452L are electrically identical. TO-251 D Features VDS (V) =25V ID = 55 A (VGS = 10V) RDS(ON) < 9 m (VGS = 10V) RDS(ON) < 15 m (VGS = 4.5V) Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 25 20 55 40 100 30 135 50 25 -55 to 175 Units V V A A mJ W C TC=25C TC=100C ID IDM IAR EAR PD TJ, TSTG TC=25C Repetitive avalanche energy L=0.1mH Power Dissipation B TC=100C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case B Steady-State Steady-State Symbol RJA RJC Typ 39 2.5 Max 50 3 Units C/W C/W Alpha & Omega Semiconductor, Ltd. AOU452 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=10A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current Conditions ID=250uA, VGS=0V VDS=20V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125C 1 100 7 10 12 35 0.72 1 55 1230 VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 315 190 1.2 26.4 VGS=10V, VDS=12.5V, ID=20A 13.5 3.9 7.75 6.5 VGS=10V, VDS=12.5V, RL=0.6, RGEN=3 IF=20A, dI/dt=100A/s 10 22.7 6.2 23.06 15.25 27.5 1.45 32 1476 9 12 15 1.8 Min 25 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s A: The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOU452 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 10V 6V 80 7V 40 60 ID (A) VGS=4V 40 20 3.5V 20 3V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 18 VGS=4.5V Normalized On-Resistance 16 RDS(ON) (m) 14 12 10 VGS=10V 8 6 0 30 40 50 60 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 10 20 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.8 0 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics 10 25C ID(A) 30 125C 5V 4.5V 50 60 VDS=5V 1.6 VGS=10V, 20A 1.4 VGS=4.5V, 20A 1.2 1 30 ID=20A 25 20 15 10 5 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C IS (A) 1.0E+02 1.0E+01 1.0E+00 RDS(ON) (m) 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 125C 25C 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AOU452 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=12.5V ID=20A Capacitance (pF) 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 30 0 0 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 5 25 Crss Coss Ciss 8 VGS (Volts) 6 4 2 1000.0 RDS(ON) limited 100.0 ID (Amps) 1ms 10.0 10ms 1.0 DC 100s Power (W) TJ(Max)=175C, TA=25C 10s 200 160 120 80 40 0 0.0001 TJ(Max)=175C TA=25C 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3C/W 1 10 100 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOU452 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 ID(A), Peak Avalanche Current 50 40 30 20 10 0 0.00001 TA=25C 60 BV - VDD Power Dissipation (W) tA = L ID 50 40 30 20 10 0 0.0001 0.001 0 25 50 75 100 125 150 175 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability TCASE (C) Figure 13: Power De-rating (Note B) 60 50 Current rating ID(A) 40 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. |
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