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| AP20G45EH/J Advanced Power Electronics Corp. Description G N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR VCES C 450V 130A ICP E * High Input Impedance * High Pick Current Capability * 4.5V Gate Drive * Strobe Flash Applications G C E TO-252(H) C G TO-251(J) E Absolute Maximum Ratings Symbol VCES VGE IGEP ICP PD@TC=25 TSTG TJ Parameter Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 450 6 8 130 20 -55 to 150 -55 to 150 Units V V V A W Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol IGES ICES VCE(sat) VGE(th) Qg Qge Qgc td(on) tr td(off) tf Cies Coes Cres Rthj-c Parameter Gate-Emitter Leakage Current Collector-Emitter Leakage Current (Tj=25) Test Conditions VGE=6V, VCE=0V VCE=450V, VGE=0V VGE=4.5V, ICP=130A (Pulsed) Min. - Typ. 5 51 2 5.4 5.5 72 640 2.6 2095 145 35 - Max. 10 10 8 1.2 6 Units uA uA V V nC nC nC ns ns ns us pF pF pF /W Collector-Emitter Saturation Voltage Gate Threshold Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction-Case VCE=VGE, IC=250uA IC=40A VCE=300V VGE=5V VCC=200V IC=40A RG=25 VGE=5V VGE=0V VCE=25V f=1.0MHz Data and specifications subject to change without notice 200124032 AP20G45EH/J 160 120 T C =25 C o V G =5.0V V G =4.5V IC , Collector Current (A) V G =4.0V 80 T C =150 o C V G =5.0V 120 IC , Collector Current (A) V G =4.5V V G =4.0V 80 V G =3.0V V G =3.0V 40 40 V G =2.0V V G =2.0V V G =1.0V 0 0 2 4 6 8 10 12 0 0 2 4 6 8 V G =1.0V 10 12 V CE , Collector Emitter Voltage (V) V CE , Collector-Emitter Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 160 12 V CE =8V T C =25 o C T C =70 o C 10 V GE = 4.5 V 120 VCE(sat) , Saturation Voltage (V) T C =100 o C T C =150 o C IC , Collector Current (A) I C = 130A 8 80 6 I C = 100A I C = 70A 4 40 I C = 35A 2 0 0 1 2 3 4 5 6 0 0 20 40 60 80 100 o 120 140 160 V GE , Gate- Emitter Voltage (V) T C , Case Temperature ( C ) Fig 3. Collector Current v.s. Gate-Emitter Voltage Fig 4. Collector- Emitter Saturation Voltage v.s. Case Temperature AP20G45EH/J 1.5 160 VGE(th) Gate Threshold Voltage (V) T C = 25 o C V G =4.5V ICP , Peak Collector Current (A) -50 0 50 100 150 120 1 80 0.5 40 0 0 0 2 4 6 8 T C , Case Temperature ( o C ) V GE , Gate-Emitter Voltage (V) Fig 5. Gate-Emitter Cut-Off Voltage Fig 6. Safe Operation Area v.s. Case Temperature f=1.0MHz 8 10000 Cies VGE , Gate-Emitter Voltage (V) 6 I CP =40A V CE =300V Capacitance (pF) 1000 4 Coes 100 Cres 2 10 1 8 15 22 29 0 0 15 30 45 60 75 V CE , Collector-Emitter Voltage (V) Q G , Gate Charge (nC) Fig 7. Collector v.s. Collector-Emitter Voltage Fig 8. Gate Charge Waveform AP20G45EH/J VCE R C 90% CV R G G CE TO THE OSCILLOSCOPE VCC=200V E + 5V - V GE 10% VGE td(on) tr td(off) tf Fig 9. Switching Time Test Circuit Fig 10. Switching Time Waveform V CE C G TO THE OSCILLOSCOPE 300V V Flasher Vtrig + CM VCM RG GE _ E + 1~3 mA IGBT IC IG VG VCM = 300V CM = 160uF ICP = 130A VG = 5V Fig 11. Gate Charge Test Circuit Fig 12. Application Test Circuit |
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