![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
APM9968C N-Channel Enhancement Mode MOSFET Features * * * * 20V/6A , RDS(ON)=16m(typ.) @ VGS=4.5V RDS(ON)=20m(typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged TSSOP-8 Packages Pin Description D S1 S1 G1 1 2 3 4 8 7 6 5 D S2 S2 G2 TSSOP-8 D D Applications * Power Management in Notebook Computer , G1 G2 S1 S1 S2 S2 Portable Equipment and Battery Powered Systems. * N-Channel MOSFET Zener Diode Protected Gate Provide Human Body Mode Electrostatic Discharge Protection to 2500 V. Ordering and Marking Information APM9968C Handling Code Temp. Range Package Code Package Code O : TSSOP-8 Temp. Range C : -55 to 150C Handling Code TR : Tape & Reel APM9968C O : APM9968C XXXXX XXXXX - Date Code ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 1 www.anpec.com.tw APM9968C Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM PD TJ TSTG RJA* Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous Maximum Drain Current - Pulsed TA=25C Maximum Power Dissipation TA=100C Parameter (TA = 25C unless otherwise noted) Rating 20 8 6 20 1 W 0.4 150 -55 to 150 80 C C C/W A V Unit Maximum Junction Temperature Storage Temperature Range Thermal Resistance - Junction to Ambient * Surface Mounted on FR4 Board, t 10 sec. Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON)a VSDa b (TA = 25C unless otherwise noted) APM9968C Typ. Max. Min. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage VGS=0V , IDS=250A VDS=16V , VGS=0V VDS=VGS , IDS=250A VGS=8V , VDS=0V VGS=4.5V , IDS=6A VGS=2.5V , IDS=5.2A ISD=0.5A , VGS=0V VDS=10V , IDS= 6A VGS=4.5V , 20 1 0.6 0.7 16 20 0.7 19 2 5 37 68 62 182 100 1 10 20 25 1.3 25 V A V A m V Dynamic Qg Total Gate Charge Qgs Qgd td(ON) Tr td(OFF) Tf Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time nC VDD=10V , IDS=6A , VGEN=4.5V , RG=6 33 100 54 ns Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 2 www.anpec.com.tw APM9968C Electrical Characteristics Cont. Symbol Ciss Coss Crss Parameter Input Capacitance Output Capacitance (TA = 25C unless otherwise noted) APM9968C Typ. Max. Min. 1253 340 260 pF Test Condition VGS=0V VDS=15V Unit Reverse Transfer Capacitance Frequency=1.0MHz Notes a b : Pulse test ; pulse width 300s, duty cycle 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 3 www.anpec.com.tw APM9968C Typical Characteristics Output Characteristics 20 VGS=1.8,2,3,4,5,6,7,8,9,10V Transfer Characteristics 20 ID-Drain Current (A) 12 VGS=1.5V ID-Drain Current (A) 16 16 12 TJ=125C TJ=25C TJ=-55C 8 8 4 VGS=1V 4 0 0 2 4 6 8 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.6 IDS=250uA On-Resistance vs. Drain Current 0.022 RDS(ON)-On-Resistance () VGS(th)-Threshold Voltage (V) (Normalized) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 0.021 0.020 0.019 0.018 0.017 0.016 0.015 0.014 VGS=4.5V VGS=2.5V -25 0 25 50 75 100 125 150 0 4 8 12 16 20 Tj - Junction Temperature (C) ID - Drain Current (A) Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 4 www.anpec.com.tw APM9968C Typical Characteristics On-Resistance vs. Gate-to-Source Voltage 0.044 ID=6A On-Resistance vs. Junction Temperature 1.8 VGS=4.5V ID=6A RDS(ON)-On-Resistance () (Normalized) 0 1 2 3 4 5 6 7 8 RDS(ON)-On-Resistance () 0.040 0.036 0.032 0.028 0.024 0.020 0.016 0.012 0.008 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (C) Gate Charge 5 2500 VDS=10V ID=6A Capacitance Frequency=1MHz VGS-Gate-Source Voltage (V) 4 2000 3 Capacitance (pF) 1500 Ciss 2 1000 1 500 Coss Crss 0 0 4 8 12 16 20 24 0 0 5 10 15 20 QG - Gate Charge (nC) VDS - Drain-to-Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 5 www.anpec.com.tw APM9968C Typical Characteristics Source-Drain Diode Forward Voltage 20 10 60 Single Pulse Power IS-Source Current (A) 48 Power (W) 1.6 36 TJ=150C TJ=25C 1 24 12 0.1 0.0 0.4 0.8 1.2 0 0.01 0.1 1 10 100 VSD -Source-to-Drain Voltage (V) Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 SINGLE PULSE 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50C/W 3.TJM-TA=PDMZthJA 4.Surface Mounted 0.01 1E-4 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 6 www.anpec.com.tw APM9968C Packaging Information TSSOP-8 e 87 2x E/2 E1 E S ( 2) GAUGE PLANE 12 e/2 D A2 A b A1 0.25 L (L1) ( 3) 1 Dim A A1 A2 b D e E E1 L L1 R R1 S 1 2 3 Millimeters Min. 0.00 0.80 0.19 2.9 0.65 BSC 6.40 BSC 4.30 0.45 1.0 REF 0.09 0.09 0.2 0 12 REF 12 REF 0.004 0.004 0.008 0 4.50 0.75 0.169 0.018 Max. 1.2 0.15 1.05 0.30 3.1 Min. 0.000 0.031 0.007 0.114 Inches Max. 0.047 0.006 0.041 0.012 0.122 0.026 BSC 0.252 BSC 0.177 0.030 0.039REF 8 8 12 REF 12 REF Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 7 www.anpec.com.tw APM9968C Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Peak temperature 183C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183C to Peak) 3C/second max. 120 seconds max Preheat temperature 125 25C) 60 - 150 seconds Temperature maintained above 183C Time within 5C of actual peak temperature 10 -20 seconds Peak temperature range 220 +5/-0C or 235 +5/-0C Ramp-down rate 6 C /second max. 6 minutes max. Time 25C to peak temperature VPR 10 C /second max. 60 seconds 215-219C or 235 +5/-0C 10 C /second max. Package Reflow Conditions pkg. thickness 2.5mm and all bgas Convection 220 +5/-0 C VPR 215-219 C IR/Convection 220 +5/-0 C pkg. thickness < 2.5mm and pkg. volume 350 mm pkg. thickness < 2.5mm and pkg. volume < 350mm Convection 235 +5/-0 C VPR 235 +5/-0 C IR/Convection 235 +5/-0 C www.anpec.com.tw Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 8 APM9968C Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape & Reel Dimensions E Po P P1 D t F W Bo Ao D1 T2 Ko J C A B T1 Application A 330 1 B 62 +1.5 D C 12.75+ 0.15 D1 J 2 + 0.5 Po T1 12.4 0.2 P1 T2 2 0.2 Ao W 12 0. 3 Bo 3.6 0.3 P 8 0.1 Ko E 1.750.1 t TSSOP-8 F 5.5 0. 1 1.5 + 0.1 1.5 + 0.1 4.0 0.1 2.0 0.1 7.0 0.1 1.6 0.1 0.30.013 Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 9 www.anpec.com.tw APM9968C Cover Tape Dimensions Application TSSOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 10 www.anpec.com.tw |
Price & Availability of APM9968C
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |