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APT12GT60BR 600V 25A Thunderbolt IGBTTM TO-247 The Thunderbolt IGBTTM is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBTTM offers superior ruggedness and ultrafast switching speed. * Low Forward Voltage Drop * Low Tail Current * Avalanche Rated MAXIMUM RATINGS Symbol VCES VCGR VEC VGE I C1 I C2 I CM1 I CM2 EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage * High Freq. Switching to 150KHz * Ultra Low Leakage Current * RBSOA and SCSOA Rated G C E C G E All Ratings: TC = 25C unless otherwise specified. APT12GT60BR UNIT 600 RY A IN MIN Collector-Gate Voltage (RGE = 20K) Emitter-Collector Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 115C Pulsed Collector Current Pulsed Collector Current 1 1 600 15 20 25 12 50 24 18 125 -55 to 150 300 Volts Amps @ TC = 25C @ TC = 115C 2 M Single Pulse Avalanche Energy Total Power Dissipation mJ Watts C Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Symbol BVCES RBVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.4mA, Tj = -55C) Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, I C = 50mA) Gate Threshold Voltage (VCE = VGE, I C = 350A, Tj = 25C) PR STATIC ELECTRICAL CHARACTERISTICS EL I TYP MAX UNIT 600 -15 3 1.6 4 2.0 5 2.5 2.8 40 1000 100 A nA 052-6208 Rev B Volts Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 150C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 150C) Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V) I CES I GES CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street APT Website - http://www.advancedpower.com Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT12GT60BR Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.5VCES Resistive Switching (25C) VGE = 15V I C = I C2 VCC = 0.66VCES RG = 10 I C = I C2 MIN TYP MAX UNIT 580 75 50 65 34 5 8 22 80 110 12 6 150 120 0.10 0.40 0.50 mJ ns ns nC pF Gate-Emitter Charge Gate-Collector ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time IM EL Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10 TJ = +150C Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time PR IN A RY 2 MIN Inductive Switching (25C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10 TJ = +25C VCE = 20V, I C = I C2 12 6 120 45 0.22 6.7 mJ S ns Turn-off Delay Time Fall Time Total Switching Losses Forward Transconductance THERMAL CHARACTERISTICS Symbol RJC RJA Torque 1 2 3 Characteristic Junction to Case Junction to Ambient Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw TYP MAX UNIT C/W lb*in 1.0 80 10 Repetitive Rating: Pulse width limited by maximum junction temperature. IC = IC2, VCC = 50V, RGE = 25, L = 250H, Tj = 25C See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 052-6208 Rev B |
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