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APTGF150DH120G
Asymmetrical - Bridge NPT IGBT Power Module
VBUS Q1 G1 CR3
VCES = 1200V IC = 150A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Switched Reluctance Motor Drives Features * Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS compliant
E1
OUT1 OUT2
Q4 G4 CR2 E4
0/VBUS
OUT1 G1 E1 VBUS 0/VBUS
E4 G4 OUT2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C
V W
Reverse Bias Safe Operating Area
300A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-5
APTGF150DH120G - Rev 2
July, 2006
Max ratings 1200 200 150 300 20 961
Unit V A
APTGF150DH120G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions Tj = 25C VGE = 0V VCE = 1200V Tj = 125C Tj = 25C VGE =15V IC = 150A Tj = 125C VGE = VCE, IC = 5 mA VGE = 20V, VCE = 0V Min Typ Max 350 600 3.7 6.5 500 Unit A V V nA
3.2 3.9 4.5
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 150A R G = 5.6 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 150A R G = 5.6 VGE = 15V Tj = 125C VBus = 600V IC = 150A Tj = 125C R G = 5.6
Min
Typ 10.2 1.4 0.75 120 50 310 20 130 60 360 30 18
Max
Unit nF
ns
ns
mJ 8
Diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 70C IF = 200A IF = 400A IF = 200A IF = 200A VR = 800V
di/dt = 400A/s
Min 1200
Typ
Max 350 600
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=1200V
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
200 2 2.3 1.8 420 520 2.5 10.7
2.5 V
Qrr
Reverse Recovery Charge
C
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2-5
APTGF150DH120G - Rev 2
July, 2006
trr
Reverse Recovery Time
ns
APTGF150DH120G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.13 0.32 150 125 100 5 3.5 280 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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3-5
APTGF150DH120G - Rev 2
July, 2006
APTGF150DH120G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 300 250
TJ=25C TJ = 125C VGE =20V VGE=12V VGE =15V
300 250
IC (A)
200 150 100 50 0 0 1 2 3 VCE (V) 4 5 6
TJ=125C
200 IC (A) 150 100 50 0 0 1 2 3 4 V CE (V) 5 6
VG E=9V
300 250 200
Transfert Characteristics 56 48 40 E (mJ)
TJ=125C
Energy losses vs Collector Current
VCE = 600V VGE = 15V R G = 5.6 T J = 125C
Eon
IC (A)
150 100 50 0 5 6 7
32 24 16
TJ=25C
8 0 0 50 100 150 IC (A) 200
Eoff
8
9
10
11
12
250
300
VGE (V) Switching Energy Losses vs Gate Resistance 70 60 50 E (mJ) 40 30 20 10 0 0 5 10 15 20 25 30 35 40 45 50 Gate Resistance (ohms)
Eoff VCE = 600V VG E =15V IC = 150A TJ = 125C
Reverse Bias Safe Operating Area 350 300
Eon
250 IC (A) 200 150 100 50 0 0 300 600 900 1200 1500 V CE (V)
VGE=15V TJ=125C R G=5.6
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.14 Thermal Impedance (C/W) 0.12 0.1 0.08 0.06 0.04 0.02 0.1 0.05 0.0001 0.001 0.01 0.1 1 10 Single Pulse 0.9 0.7 0.5 0.3
IGBT
0 0.00001
rectangular Pulse Duration (Seconds)
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4-5
APTGF150DH120G - Rev 2
July, 2006
APTGF150DH120G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 100 90 80 70 60 50 40 30 20 10 0 0 40 80 IC (A) 120 160 200 0 0 0.5 1 1.5 V F (V) 2 2.5 3
hard switching ZCS ZVS VCE =600V D=50% RG =5.6 TJ=125C TC=75C
Forward Characteristic of diode 500 400 300 200 100
TJ=25C
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
Diode
0.05 0 0.00001
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
IF (A)
TJ=125C
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5-5
APTGF150DH120G - Rev 2
July, 2006

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