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APTGF25DDA120T3G
Dual Boost Chopper NPT IGBT Power Module
13 14
VCES = 1200V IC = 25A @ Tc = 80C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction Features * Non Punch Through (NPT) Fast IGBT(R) - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated - Symmetrical design * Kelvin emitter for easy drive * Very low stray inductance * High level of integration * Internal thermistor for temperature monitoring Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Easy paralleling due to positive TC of VCEsat * Each leg can be easily paralleled to achieve a single boost of twice the current capability. * RoHS compliant Max ratings 1200 40 25 100 20 208 50A@1150V Unit V A V W
July, 2006 1-6 APTGF25DDA120T3G - Rev 1
CR1
CR2
22
7
23 Q1 26 27
8 Q2 4 3
29 15
30
31 R1
32 16
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGF25DDA120T3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Test Conditions Min Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy VGE = 0V VCE = 1200V Tj = 25C Tj = 125C Tj = 25C VGE =15V IC = 25A Tj = 125C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC =25A Inductive Switching (25C) VGE = 15V VBus = 400V IC = 25A R G = 22 Inductive Switching (125C) VGE = 15V VBus = 400V IC = 25A R G = 22 VGE = 15V Tj = 125C VBus = 400V IC = 25A Tj = 125C R G = 22 Typ Max 250 500 3.7 6 400 Typ 1650 250 110 160 10 70 60 50 305 30 60 50 346 40 3.5 mJ 1.5 Max Unit A V V nA Unit pF
2.5 4
3.2 4.0
Dynamic Characteristics
Min
nC
ns
ns
Chopper diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 70C
Min 1200
Typ
Max 250 500
Unit V A A V
July, 2006 2-6 APTGF25DDA120T3G - Rev 1
Maximum Reverse Leakage Current Forward Current Diode Forward Voltage
VR=1200V
IF = 60A IF = 120A IF = 60A IF = 60A VR = 800V
di/dt =200A/s
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
60 2 2.3 1.8 400 470 1.2 4
2.5
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns C
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APTGF25DDA120T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt
Thermal and package characteristics
Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode
Min
Typ
Max 0.6 0.9 150 125 100 4.7 110
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
2500 -40 -40 -40 2.5
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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28
APTGF25DDA120T3G
Typical Performance Curve
80 Ic, Collector Current (A) 70 60 50 40 30 20 10 0 0 2 3 4 5 6 7 VCE, Collector to Emitter Voltage (V) Transfer Characteristics VGE, Gate to Emitter Voltage (V)
250s Pulse Test < 0.5% Duty cycle
Output characteristics (VGE=15V) Ic, Collector Current (A)
250s Pulse Test < 0.5% Duty cycle TJ=25C
20 16 12 8 4 0
Output Characteristics (VGE=10V)
250s Pulse Test < 0.5% Duty cycle TJ=25C
TJ=125C
TJ=125C
1
8
0
0.5
1
1.5
2
2.5
3
3.5
VCE, Collector to Emitter Voltage (V) Gate Charge
IC = 25A TJ = 25C V CE =240V V CE=600V
120
Ic, Collector Current (A)
18 16 14 12 10 8 6 4 2 0 0
100 80 60 40
V CE =960V
TJ=125C
20 0 0
T J=25C
2.5 5 7.5 10 12.5 VGE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
TJ = 125C 250s Pulse Test < 0.5% Duty cycle
15
30
60
90
120
150
180
Gate Charge (nC) On state Voltage vs Junction Temperature
250s Pulse Test < 0.5% Duty cycle VGE = 15V Ic=50A Ic=25A
VCE, Collector to Emitter Voltage (V)
9 8 7 6 5 4 3 2 1 0 9
VCE, Collector to Emitter Voltage (V)
6 5 4 3 2 1 0
Ic=50A
Ic=25A
Ic=12.5A
Ic=12.5A
10
11
12
13
14
15
16
-50
VGE, Gate to Emitter Voltage (V) Breakdown Voltage vs Junction Temp. Collector to Emitter Breakdown Voltage (Normalized)
-25 0 25 50 75 100 TJ, Junction Temperature (C)
125
1.10
Ic, DC Collector Current (A)
60 50
DC Collector Current vs Case Temperature
1.05 1.00 0.95 0.90 0.85 0.80 -50 -25 0 25 50 75 100 TJ, Junction Temperature (C) 125
30 20 10 0 -50 -25 0 25 50 75 100 TC, Case Temperature (C) 125 150
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APTGF25DDA120T3G
Turn-On Delay Time vs Collector Current
V CE = 600V RG = 22
Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns)
td(on), Turn-On Delay Time (ns)
75 70 65 60 55 50 5 15 25 35 45 55 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current
400
V GE=15V, TJ=125C
350 300
V GE = 15V
250
V CE = 600V R G = 22
V GE=15V, TJ=25C
200 5 15 25 35 45 55
ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current
160
V CE = 600V RG = 22
50 45
tf, Fall Time (ns)
T J = 125C
tr, Rise Time (ns)
120
40 35 30 25
TJ = 25C
80
V GE=15V
40
V CE = 600V, VGE = 15V, RG = 22
0 5 15 25 35 45 55
ICE, Collector to Emitter Current (A) Turn-On Energy Loss vs Collector Current
V CE = 600V R G = 22
20 5 15 25 35 45 ICE, Collector to Emitter Current (A) 55
Turn-Off Energy Loss vs Collector Current Eoff, Turn-off Energy Loss (mJ)
Eon, Turn-On Energy Loss (mJ)
10 8 6 4 2 0 5
4
V CE = 600V V GE = 15V RG = 22 TJ = 125C
TJ=125C, V GE=15V
3
TJ=25C, V GE =15V
2
TJ = 25C
1
0 15 25 35 45 ICE, Collector to Emitter Current (A) 55 5 15 25 35 45 ICE, Collector to Emitter Current (A)
Reverse Bias Safe Operating Area
55
Switching Energy Losses (mJ)
5 4 3 2 1 0
Switching Energy Losses vs Gate Resistance
VCE = 600V VGE = 15V T J= 125C
60
IC, Collector Current (A)
Eon, 25A
50 40
Eoff, 25A
20 10 0
0
10
20
30
40
50
60
0
400
800
1200
Gate Resistance (Ohms)
VCE, Collector to Emitter Voltage (V)
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APTGF25DDA120T3G
Fmax, Operating Frequency (kHz) Capacitance vs Collector to Emitter Voltage 10000
Cies
Operating Frequency vs Collector Current 120 100 80
ZVS VCE = 600V D = 50% RG = 22 TJ = 125C TC= 75C
C, Capacitance (pF)
1000
Coes
60 40 20 0 0 10 20 30 IC, Collector Current (A) 40
Hard switching ZCS
100
Cres
10 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 50
0.7 Thermal Impedance (C/W) 0.6 0.5 0.4 0.3 0.2 0.1
0.5 0.3 0.1 0.05 0.9 0.7
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Single Pulse
0 0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTGF25DDA120T3G - Rev 1
Microsemi reserves the right to change, without notice, the specifications and information contained herein
July, 2006

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