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| APTGT50DA170TG Boost chopper Trench + Field Stop IGBT(R) Power Module VB US SENS E VBUS NT C2 VCES = 1700V IC = 50A @ Tc = 80C Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration * Internal thermistor for temperature monitoring Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant CR1 OUT Q2 G2 E2 0/VBU S NT C1 G2 E2 OUT VBUS 0/VBUS OUT VBUS SENSE E2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 1700 75 50 100 20 312 100A @ 1600V Unit V July, 2006 1-5 APTGT50DA170TG - Rev 1 A V W Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGT50DA170TG All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25C VGE = 15V IC = 50A Tj = 125C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Min Typ 2.0 2.4 5.8 Max 250 2.4 6.5 400 Unit A V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 900V IC = 50A R G = 10 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 50A R G = 10 VGE = 15V Tj = 125C VBus = 900V IC = 50A Tj = 125C R G = 10 Min Typ 4400 180 150 370 40 650 180 400 50 800 300 16 Max Unit pF ns ns mJ 15 Chopper diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Er Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 1700 Typ Max 250 500 Unit V A A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=1700V IF = 50A C mJ www.microsemi.com 2-5 APTGT50DA170TG - Rev 1 July, 2006 IF = 50A VR = 900V di/dt =800A/s 50 1.8 1.9 385 490 14 23 6 12 2.2 V ns APTGT50DA170TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K RT = R 25 1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25 T: Thermistor temperature Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode Min Typ Max 0.4 0.7 150 125 100 4.7 160 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To Heatsink M5 3500 -40 -40 -40 2.5 SP4 Package outline (dimensions in mm) ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT50DA170TG - Rev 1 July, 2006 APTGT50DA170TG Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 100 TJ = 125C 80 IC (A) 60 40 20 0 VGE=20V 100 80 IC (A) T J=25C 60 40 20 0 0 0.5 1 1.5 2 2.5 VCE (V) TJ=125C VGE =13V V GE=15V VGE=9V 3 3.5 4 0 1 2 3 VCE (V) 4 5 100 80 60 40 20 0 5 6 Transfert Characteristics 50 TJ =25C Energy losses vs Collector Current V CE = 900V V GE = 15V RG = 10 T J = 125C Eon 40 T J=125C E (mJ) IC (A) 30 20 10 0 Eoff TJ=125C Er 7 8 9 V GE (V) 10 11 12 13 0 20 40 IC (A) 60 80 100 Switching Energy Losses vs Gate Resistance 50 40 E (mJ) 30 20 10 Er VCE = 900V VGE =15V IC = 50A TJ = 125C Reverse Bias Safe Operating Area 125 Eon 100 IC (A) 75 50 25 0 V GE=15V T J=125C RG=10 Eoff 0 0 10 20 30 40 50 60 Gate Resistance (ohms) 70 80 0 400 800 1200 1600 2000 V CE (V) 0.45 Thermal Impedance (C/W) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0.00001 0.9 0.7 0.5 0.3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration IGBT 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT50DA170TG - Rev 1 July, 2006 APTGT50DA170TG Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 30 25 20 15 10 5 0 0 10 20 30 40 IC (A) 50 60 70 80 hard switching ZVS VCE =900V D=50% RG=10 T J=125C T C=75C Forward Characteristic of diode 100 90 80 70 60 50 40 30 20 10 0 0 TJ =25C IF (A) ZCS T J=125C TJ=125C 0.5 1 1.5 V F (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.8 Thermal Impedance (C/W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10 0.9 Diode 0 0.00001 rectangular Pulse Duration (Seconds) Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT50DA170TG - Rev 1 Microsemi reserves the right to change, without notice, the specifications and information contained herein July, 2006 |
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