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APTM100DA18T
Boost chopper MOSFET Power Module
VBUS VBUS SENSE NTC2
VDSS = 1000V RDSon = 180m typ @ Tj = 25C ID = 43A @ Tc = 25C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile
CR1
OUT Q2
G2
S2 0/VBU S NTC1
G2 S2
OUT
VBUS
0/VBUS
OUT
VBUS SENSE
S2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
Max ratings 1000 43 33 172 30 215 780 25 50 3000
Unit V A V m W A mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-6
APTM100DA18T- Rev 1
June, 2005
APTM100DA18T
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 1000V VGS = 0V,VDS = 800V T j = 25C T j = 125C
Min
Typ
VGS = 10V, ID = 21.5A VGS = VDS, ID = 5mA VGS = 30 V, VDS = 0V
180 3
Max 500 2000 215 5 150
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 43A Inductive switching @ 125C VGS = 15V VBus = 670V ID = 43A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 670V ID = 43A, R G = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 670V ID = 43A, R G = 2.5
Min
Typ 10.4 1.76 0.32 372 48 244 18 12 155 40 1800 1246 2846 1558
Max
Unit nF
nC
ns
J
J
Chopper diode ratings and characteristics
Symbol Characteristic IF(A V) Maximum Average Forward Current VF Diode Forward Voltage
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
Tj = 125C
3600
nC
APT website - http://www.advancedpower.com
2-6
APTM100DA18T- Rev 1
Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1.
June, 2005
Test Conditions 50% duty cycle IF = 60A IF = 120A IF = 60A IF = 60A VR = 667V di/dt = 200A/s IF = 60A VR = 667V di/dt = 200A/s
Min
T c = 100C
Tj = 125C Tj = 25C Tj = 125C Tj = 25C
Typ 60 1.9 2.2 1.7 280 350 760
Max 2.5
Unit A V
ns
APTM100DA18T
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Diode 2500 -40 -40 -40 1.5 Min Typ Max 0.16 0.9 150 125 100 4.7 160 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To Heatsink
M5
Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952
Max
Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
Package outline (dimensions in mm)
APT website - http://www.advancedpower.com
3-6
APTM100DA18T- Rev 1
June, 2005
APTM100DA18T
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.18 Thermal Impedance (C/W) 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.7 0.5 0.3 0.9
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 120
VGS =15, 10&8V
Transfert Characteristics 160 140 ID, Drain Current (A) 120 100 80 60 40 20 0 30 0 1 2 3 4 5 TJ =25C TJ =125C TJ =-55C 6 7 8 9
VDS > I D(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
I D, Drain Current (A)
100 80 60 40 20 0 0 5 10 15 20
7V
6.5V 6V
5.5V 5V
25
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS =10V @ 21.5A
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 45 40 35 30 25 20 15 10 5 0 25 50 75 100 125 150
June, 2005
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
VGS=10V
VGS=20V
20
40
60
80
100
120
ID, Drain Current (A)
TC, Case Temperature (C)
APT website - http://www.advancedpower.com
4-6
APTM100DA18T- Rev 1
APTM100DA18T
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) Ciss 10000 Coss 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 12 10 8 6 4 2 0 0 100 200 300 400 500 Gate Charge (nC)
June, 2005
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS =10V ID=21.5A
1000
100s
100
limited by R DSon 1ms
10 Single pulse TJ =150C 1 1 10 100 1000 VDS , Drain to Source Voltage (V)
10ms
Gate Charge vs Gate to Source Voltage I D=43A TJ=25C
VDS=200V VDS=500V VDS=800V
APT website - http://www.advancedpower.com
5-6
APTM100DA18T- Rev 1
APTM100DA18T
Delay Times vs Current 200 td(on) and td(off) (ns) 160 120 80 40 0 10 30 50 70 90 I D, Drain Current (A) Switching Energy vs Current
V DS=670V RG =2.5 T J=125C L=100H
Rise and Fall times vs Current 80
V DS =670V RG =2.5 T J=125C L=100H
t d(off) tr and tf (ns)
tf
60
40 tr 20
t d(on)
0 10 30 50 70 I D, Drain Current (A) 90
Switching Energy vs Gate Resistance
5
Switching Energy (mJ)
7
Switching Energy (mJ)
VDS=670V RG=2.5 TJ=125C L=100H
Eon
4 3 2 1 0
6 5 4 3 2 1 0 0
Eoff
V DS =670V ID=43A T J=125C L=100H
Eoff
Eon
10
30
50
70
90
5
10
15
20
I D, Drain Current (A) Operating Frequency vs Drain Current I DR, Reverse Drain Current (A)
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage
250 200
Frequency (kHz)
ZVS ZCS
1000
100
150 100 50 0 10 15
VDS=670V D=50% RG=2.5 T J=125C Tc=75C
TJ=150C TJ=25C
10
Hard switching
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
June, 2005
20 25 30 35 ID, Drain Current (A)
40
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
6-6
APTM100DA18T- Rev 1
APT reserves the right to change, without notice, the specifications and information contained herein

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