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APTM120A20SG
Phase leg Series & parallel diodes MOSFET Power Module
VBUS
VDSS = 1200V RDSon = 200m typ @ Tj = 25C ID = 50A @ Tc = 25C
Q1 G1 OUT S1
Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Low profile * RoHS Compliant
Q2 G2 0/VBUS
S2
G1 S1
VBUS
0/VBUS
OUT
S2 G2
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-6
APTM120A20SG Rev 1
Max ratings 1200 50 37 200 30 240 1250 12 30 1300
Unit V A V m W A mJ
July, 2006
APTM120A20SG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V T j = 25C T j = 125C
Typ
VGS = 10V, ID = 25A VGS = VDS, ID = 6mA VGS = 30 V, VDS = 0V
200 3
Max 1.5 6 240 5 450
Unit mA m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energ Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 50A Inductive switching @ 125C VGS = 15V VBus = 800V ID = 50A R G =0.8 Inductive switching @ 25C VGS = 15V, VBus = 800V ID = 50A, R G = 0.8 Inductive switching @ 125C VGS = 15V, VBus = 800V ID = 50A, R G = 0.8
Min
Typ 15.2 2.2 0.42 600 84 390 10 10 68 36 2.79 0.6 5.6 0.81
Max
Unit nF
nC
ns
mJ
mJ
Series diode ratings and characteristics
Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage IRM IF VF
Test Conditions VR=200V IF = 60A IF = 120A IF = 60A IF = 60A VR = 133V di/dt = 400A/s Tj = 25C Tj = 125C
T c = 85C
Min 200
Typ
Max 350 600
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
60 1.1 1.4 0.9 24 48 66 300
1.15 V
July, 2006 2-6 APTM120A20SG Rev 1
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
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APTM120A20SG
Parallel diode ratings and characteristics
Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage IRM IF VF Test Conditions VR=1200V IF = 120A IF = 240A IF = 120A IF = 120A VR = 800V di/dt = 400A/s Tj = 25C Tj = 125C
T c = 70C
Min 1200
Typ
Max 350 600
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min Transistor Series diode Parallel diode 2500 -40 -40 -40 3 2
120 2 2.3 1.8 400 470 2.4 8 Typ
2.5 V
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns C
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance
Max 0.1 0.65 0.46 150 125 100 5 3.5 280
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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APTM120A20SG Rev 1
July, 2006
APTM120A20SG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 Thermal Impedance (C/W) 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 150
VGS =15, 10 & 8V 7V 6.5V
Transfert Characteristics 180 ID, Drain Current (A) 150 120 90 60 30 0
TJ=25C TJ=125C T J=-55C
VDS > I D(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
I D, Drain Current (A)
120 90
6V
60
5.5V
30
5V
0 0 5 10 15 20 25 30 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS =10V @ 25A
0
1
2
3
4
5
6
7
8
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 50 40 30 20 10 0
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
VGS=10V VGS=20V
30
60
90
120
25
50
75
100
125
150
ID, Drain Current (A)
TC, Case Temperature (C)
July, 2006
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APTM120A20SG Rev 1
APTM120A20SG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) Ciss 10000 Coss 1000 Crss 14 12 10 8 6 4 2 0 0 120 240 360 480 600 720 840 Gate Charge (nC)
July, 2006
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS =10V ID=25A
1000
100s
100
limited by RDS on
1ms
10
Single pulse TJ=150C TC=25C 1
10ms
1 1200 10 100 1000 VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage I D=50A TJ=25C
V DS =240V VDS=600V VDS=960V
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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5-6
APTM120A20SG Rev 1
APTM120A20SG
Delay Times vs Current 80 td(on) and td(off) (ns) t d(off) 50 tf Rise and Fall times vs Current
60
V DS =800V RG =0.8 T J=125C L=100H
tr and tf (ns)
40
25
V DS =800V RG =0.8 T J=125C L=100H
tr
20
t d(on) 0 10 30 50 70 90 110 10 30 I D, Drain Current (A) Switching Energy vs Current 50 70 90 I D, Drain Current (A) 110
0
Switching Energy vs Gate Resistance 9
12
Switching Energy (mJ)
9 6 3 0 10
Switching Energy (mJ)
VDS=800V RG=0.8 TJ=125C L=100H
E on
Eon 6
VDS=800V ID=50A T J=125C L=100H
Eoff
3
Eoff
0
30
50
70
90
110
0
1
2
3
4
5
6
ID, Drain Current (A) Operating Frequency vs Drain Current 200 175
ZVS Hard switching V DS =800V D=50% RG =0.8 T J=125C T C=75C
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
1000
T J=150C
Frequency (kHz)
150 125 100 75 50 25 0 10
100
T J=25C
10
ZCS
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
July, 2006
20 30 40 ID, Drain Current (A)
50
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTM120A20SG Rev 1
Microsemi reserves the right to change, without notice, the specifications and information contained herein

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