|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
APTM120A29FT Phase Leg MOSFET Power Module VBUS Q1 NT C2 VDSS = 1200V RDSon = 290m max @ Tj = 25C ID = 34A @ Tc = 25C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile G1 S1 OUT Q2 G2 S2 0/VBUS NT C1 G2 S2 OUT VB US 0/VBUS OUT S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Tc = 25C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com 1-6 APTM120A29FT- Rev 0 Max ratings 1200 34 25 136 30 290 780 22 50 3000 Unit V A V m W A mJ July, 2004 APTM120A29FT All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 500A Min 1200 VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V T j = 25C T j = 125C Typ Max 200 1000 290 5 150 Unit V A m V nA VGS = 10V, ID = 17A VGS = VDS, ID = 5mA VGS = 30 V, VDS = 0V 3 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 34A Inductive switching @ 125C VGS = 15V VBus = 800V ID = 34A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 800V ID = 34A, R G = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 800V ID = 34A, R G = 2.5 Min Typ 10.3 1.54 0.26 374 48 240 20 15 160 45 1980 1371 3131 1714 Max Unit nF nC ns J J Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25C Tc = 80C Min Typ VGS = 0V, IS = - 34A IS = - 34A VR = 600V diS/dt = 200A/s IS = - 34A VR = 600V diS/dt = 200A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C 4 14 Max 34 25 1.3 18 320 650 Unit A V V/ns ns C APT website - http://www.advancedpower.com 2-6 APTM120A29FT- Rev 0 Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 34A di/dt 700A/s VR VDSS Tj 150C July, 2004 APTM120A29FT Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min 2500 -40 -40 -40 Typ Max 0.16 150 125 100 4.7 160 Unit C/W V C N.m g Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K Min Typ 68 4080 Max Unit k K RT = R 25 1 1 exp B25 / 85 T - T 25 T: Thermistor temperature RT : Thermistor value at T Package outline APT website - http://www.advancedpower.com 3-6 APTM120A29FT- Rev 0 July, 2004 APTM120A29FT Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.18 Thermal Impedance (C/W) 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.7 0.5 0.3 0.9 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 100 VGS =15, 10 & 8V Transfert Characteristics 160 140 ID, Drain Current (A) VDS > I D(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle I D, Drain Current (A) 80 60 40 20 0 0 5 10 15 20 7V 6.5V 120 100 80 60 40 20 0 TJ=25C TJ=125C 0 1 2 3 4 5 6 TJ=-55C 7 8 9 6V 5.5V 5V 25 30 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A) Normalized to VGS=10V @ 17A VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 40 30 20 10 0 RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 VGS=10V VGS=20V 20 40 60 80 25 50 75 100 125 150 ID, Drain Current (A) TC, Case Temperature (C) July, 2004 APT website - http://www.advancedpower.com 4-6 APTM120A29FT- Rev 0 APTM120A29FT RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) Ciss 10000 Coss 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 12 10 8 6 4 2 0 0 80 160 240 320 400 480 Gate Charge (nC) July, 2004 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area VGS =10V ID=17A 1000 100s 100 limited by RDS on 1ms 10 Single pulse TJ =150C 1 1 10ms 1200 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage I D=34A TJ=25C V DS=240V VDS=600V V DS =960V APT website - http://www.advancedpower.com 5-6 APTM120A29FT- Rev 0 APTM120A29FT Delay Times vs Current 180 td(on) and td(off) (ns) 150 60 V DS=800V RG =2.5 T J=125C L=100H Rise and Fall times vs Current 80 V DS =800V RG =2.5 T J=125C L=100H t d(off) tf 90 60 30 0 10 tr and tf (ns) 120 40 tr 20 td(on) 0 20 30 40 50 60 70 10 20 I D, Drain Current (A) Switching Energy vs Current 30 40 50 ID, Drain Current (A) 60 70 Switching Energy vs Gate Resistance 7 VDS=800V ID=34A TJ=125C L=100H 6 Switching Energy (mJ) 5 4 3 2 1 0 10 Switching Energy (mJ) VDS=800V RG=2.5 TJ=125C L=100H Eon 6 5 4 3 2 1 Eoff Eoff Eon 20 30 40 50 60 I D, Drain Current (A) 70 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage Operating Frequency vs Drain Current 200 175 ZCS IDR, Reverse Drain Current (A) 225 1000 Frequency (kHz) 150 125 100 75 50 25 0 8 12 16 20 24 28 ID, Drain Current (A) 32 VDS=800V D=50% RG=2.5 T J=125C T C=75C ZVS 100 TJ=150C TJ=25C 10 Hard switching 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2004 APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com 6-6 APTM120A29FT- Rev 0 APT reserves the right to change, without notice, the specifications and information contained herein |
Price & Availability of APTM120A29FT |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |