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APTM20DHM20TG
Asymmetrical - Bridge MOSFET Power Module
VBUS VBUS SENSE Q1 CR3
VDSS = 200V RDSon = 20m typ @ Tj = 25C ID = 89A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Switched Reluctance Motor Drives Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant
G1 S1 OUT1 OUT2 Q4
CR2 G4 0/VBUS SENSE S4 0/VBUS NTC2
NTC1
VBUS SENSE
G4 S4
OUT2
VBUS
0/VBUS
OUT1
S1 G1
0/VBUS SENSE
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-6
APTM20DHM20TG - Rev 3
mJ
July, 2006
Tc = 25C
Max ratings 200 89 66 356 30 24 357 89 50 2500
Unit V A V m W A
APTM20DHM20TG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V T j = 25C T j = 125C
Typ
VGS = 10V, ID = 44.5A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V
20 3
Max 100 500 24 5 100
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 75A Inductive switching @ 125C VGS = 15V VBus = 133V ID = 75A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 133V ID = 75A, R G = 5 Inductive switching @ 125C VGS = 15V, VBus = 133V ID = 75A, R G = 5
Min
Typ 6850 2180 97 112 43 47 28 56 81 99 463 455 608 531
Max
Unit pF
nC
ns
J
J
Diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
Test Conditions VR=200V IF = 100A IF = 200A IF = 100A IF = 100A VR = 133V di/dt = 200A/s Tj = 25C Tj = 125C Tc = 80C
Min 200
Typ
Max 250 500
Unit V A A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
60 110 200 840
ns nC
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2-6
APTM20DHM20TG - Rev 3
July, 2006
100 1 1.4 0.9
1.1 V
APTM20DHM20TG
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.35 0.55 150 125 100 4.7 160 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To Heatsink
M5
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min
Typ 50 3952
Max
Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
SP4 Package outline (dimensions in mm)
ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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APTM20DHM20TG - Rev 3
July, 2006
APTM20DHM20TG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 Single Pulse 0.9
0 0.00001
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 250
V GS=15&10V 9V
200 ID, Drain Current (A) 160 120 80 40 0
Transfert Characteristics
VDS > ID(on)xR DS(on)MAX 250s pulse test @ < 0.5 duty cycle
I D, Drain Current (A)
200 150 100 50 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS (on) vs Drain Current 1.2 1.15 1.1 1.05 1 0.95 0.9 0 20 40 60 80 100 I D, Drain Current (A) 120
VGS =20V
7.5V 7V 6.5V 6V 5.5V
T J=25C TJ =125C TJ =-55C
2
3 4 5 6 7 8 9 VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature 100 I D, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
Normalized to V GS=10V @ 44.5A
80 60 40 20 0 25
July, 2006 4-6 APTM20DHM20TG - Rev 3
VGS =10V
50 75 100 125 TC, Case Temperature (C)
150
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APTM20DHM20TG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF)
Ciss Coss
2.5 2.0 1.5 1.0 0.5 0.0
ON resistance vs Temperature
VGS=10V ID= 44.5A
-50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
1000 I D, Drain Current (A)
100
limited by RDSon
100s
1ms
10
Single pulse T J=150C T C=25C
10ms
DC line
1
1
10 100 1000 VDS , Drain to Source Voltage (V)
10000
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 12 VDS=40V ID=75A 10 TJ=25C VDS=100V
8 6 4 2 0 0 25 50 75
VDS=160V
1000
Crss
100
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
100
125
Gate Charge (nC)
July, 2006
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APTM20DHM20TG - Rev 3
APTM20DHM20TG
Delay Times vs Current Rise and Fall times vs Current
90 80
td(on) and td(off) (ns)
160 140 td(off)
t r and tf (ns)
VDS=133V RG=5 TJ=125C L=100H
70 60 50 40 30 20 10 0 25 50 75 100
120 100 80 60 40 20 0 150 0
VDS=133V RG=5 T J=125C L=100H
tf
tr
td(on)
125
25
50
75
100
125
150
ID, Drain Current (A) Switching Energy vs Current
ID, Drain Current (A)
1200 1000
Eon and Eoff (J)
Switching Energy vs Gate Resistance 1500 Switching Energy (J) 1250 1000 750 500 250 Eoff
VDS=133V ID=75A T J=125C L=100H
800 600 400 200 0 0
VDS=133V RG=5 T J=125C L=100H
Eon Eoff
Eoff Eon
25
50
75
100
125
150
0
5
10
15
20
25
30
35
40
I D, Drain Current (A)
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000
Operating Frequency vs Drain Current 300 Frequency (kHz) 250 200 150 100 50 0 10 20 30 40 50 60 70 ID, Drain Current (A) 80
ZCS Hard switching
VDS=133V D=50% RG=5 T J=125C T C=75C
ZVS
IDR, Reverse Drain Current (A)
350
100
T J=150C
10
TJ=25C
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V)
July, 2006
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTM20DHM20TG - Rev 3
Microsemi reserves the right to change, without notice, the specifications and information contained herein

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