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| APTM20HM10FG Full - Bridge MOSFET Power Module VB US Q1 Q3 VDSS = 200V RDSon = 10m typ @ Tj = 25C ID = 175A @ Tc = 25C Application * * * * Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control G1 OUT1 OUT2 G3 S1 Q2 S3 Q4 Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration G2 G4 S2 0/VBUS S4 * * OUT1 G1 S1 VBUS 0/VBUS G2 S2 * Benefits * * * * * S3 G3 OUT2 S4 G4 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Tc = 25C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-7 APTM20HM10FG- Rev 2 Max ratings 200 175 131 700 30 12 694 89 50 2500 Unit V A V m W A July, 2006 APTM20HM10FG All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Typ Tj = 25C Tj = 125C 10 3 VGS = 10V, ID = 87.5A VGS = VDS, ID = 5mA VGS = 30 V, VDS = 0V Max 200 1000 12 5 150 Unit A m V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 150A Inductive switching @ 125C VGS = 15V VBus = 133V ID = 150A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 133V ID = 150A, R G = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 133V ID = 150A, R G = 2.5 Min Typ 13.7 4.36 0.19 224 86 94 28 56 81 99 926 910 1216 1062 Max Unit nF nC ns J J Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Min Typ Tc = 25C Tc = 80C VGS = 0V, IS = - 150A Tj = 25C Tj = 125C Tj = 25C Tj = 125C 2.14 5.8 IS = -150A VR = 133V diS/dt = 200A/s Max 175 131 1.3 8 220 420 Unit A V V/ns ns C July, 2006 2-7 APTM20HM10FG- Rev 2 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 150A di/dt 700A/s VR VDSS Tj 150C www.microsemi.com APTM20HM10FG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min 2500 -40 -40 -40 3 2 Typ Max 0.18 150 125 100 5 3.5 280 Unit C/W V C N.m g Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3-7 APTM20HM10FG- Rev 2 July, 2006 APTM20HM10FG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 0.18 0.9 0.16 0.14 0.7 0.12 0.5 0.1 0.08 0.3 0.06 Single Pulse 0.04 0.1 0.02 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 500 V GS=15&10V 9V Thermal Impedance (C/W) 10 400 ID, Drain Current (A) Transfert Characteristics VDS > ID(on)xR DS(on)MAX 250s pulse test @ < 0.5 duty cycle I D, Drain Current (A) 400 300 200 100 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS (on) vs Drain Current 1.2 1.15 1.1 1.05 1 0.95 0.9 0 40 80 120 160 200 I D, Drain Current (A) 240 VGS =20V 300 7.5V 7V 6.5V 6V 5.5V 200 T J=25C TJ =125C TJ =-55C 100 0 2 3 4 5 6 7 8 9 VGS, Gate to Source Voltage (V) RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 180 I D, DC Drain Current (A) 160 140 120 100 80 60 40 20 0 25 50 75 100 125 TC, Case Temperature (C) 150 July, 2006 Normalized to V GS=10V @ 87.5A VGS =10V www.microsemi.com 4-7 APTM20HM10FG- Rev 2 APTM20HM10FG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss 10000 Coss 1 1 10 100 1000 VDS, Drain to Source Voltage (V) ID, Drain Current (A) 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area limited by RDSon ON resistance vs Temperature VGS=10V ID= 87.5A 1000 100s 100 1ms 10 10ms Single pulse TJ=150C TC=25C DC line VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 12 V DS =40V I D=150A 10 TJ=25C V DS =100V 8 6 4 2 0 0 50 100 150 200 250 Gate Charge (nC) July, 2006 V DS =160V 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5-7 APTM20HM10FG- Rev 2 APTM20HM10FG Delay Times vs Current 90 80 td(on) and td(off) (ns) 70 60 50 40 30 20 10 0 50 100 150 200 250 300 I D, Drain Current (A) Switching Energy vs Current VDS=133V RG=2.5 TJ=125C L=100H Rise and Fall times vs Current 160 140 VDS=133V RG=2.5 T J=125C L=100H td(off) t r and tf (ns) tf 120 100 80 60 40 20 0 0 tr td(on) 50 100 150 200 250 300 ID, Drain Current (A) Switching Energy vs Gate Resistance 3 Switching Energy (mJ) 2.5 2 1.5 1 Eon VDS=133V ID=150A TJ=125C L=100H 2.5 2 1.5 1 0.5 0 0 50 100 150 200 250 300 ID, Drain Current (A) VDS=133V RG=2.5 TJ=125C L=100H Eon Eoff Eon and Eoff (mJ) Eoff Eon 0 5 10 15 20 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 Operating Frequency vs Drain Current 300 Frequency (kHz) 250 200 150 100 50 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) Hard Switching ZVS V DS=133V D=50% R G=2.5 T J=125C T C=75C IDR, Reverse Drain Current (A) 350 100 TJ =150C TJ =25C ZCS 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V) July, 2006 Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-7 APTM20HM10FG- Rev 2 Microsemi reserves the right to change, without notice, the specifications and information contained herein APTM20HM10FG www.microsemi.com 7-7 APTM20HM10FG- Rev 2 July, 2006 |
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