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| APTM20HM20FTG Full - Bridge MOSFET Power Module VBUS Q1 Q3 VDSS = 200V RDSon = 20m typ @ Tj = 25C ID = 89A @ Tc = 25C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies G1 S1 Q2 OUT1 OUT2 Q4 G3 S3 G2 S2 NT C1 0/VBUS NT C2 G4 S4 Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant Max ratings 200 89 66 356 30 24 357 89 50 2500 Unit V A V m W A mJ G3 S3 G4 S4 OUT2 VBUS 0/VBUS OUT1 S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTM20HM20FTG - Rev 2 July, 2006 Tc = 25C APTM20HM20FTG All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 250A Min 200 VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Typ Max 250 1000 24 5 100 Unit V A m V nA Tj = 25C Tj = 125C 20 3 VGS = 10V, ID = 44.5A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 75A Inductive switching @ 125C VGS = 15V VBus = 133V ID = 75A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 133V ID = 75A, R G = 5 Inductive switching @ 125C VGS = 15V, VBus = 133V ID = 75A, R G = 5 Min Typ 6850 2180 97 112 43 47 28 56 81 99 463 455 608 531 Max Unit pF nC ns J J Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25C Tc = 80C Min Typ VGS = 0V, IS = - 75A IS = - 75A VR = 133V diS/dt = 100A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C Max 89 66 1.3 8 220 420 Unit A V V/ns ns C July, 2006 2-6 APTM20HM20FTG - Rev 2 1.07 2.9 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 75A di/dt 700A/s VR VDSS Tj 150C www.microsemi.com APTM20HM20FTG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min 2500 -40 -40 -40 2.5 Typ Max 0.35 150 125 100 4.7 160 Unit C/W V C N.m g Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K RT = R 25 1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25 T: Thermistor temperature SP4 Package outline (dimensions in mm) ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTM20HM20FTG - Rev 2 July, 2006 APTM20HM20FTG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 Single Pulse 0.9 0 0.00001 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 250 V GS=15&10V 9V 200 ID, Drain Current (A) 160 120 80 40 0 Transfert Characteristics VDS > ID(on)xR DS(on)MAX 250s pulse test @ < 0.5 duty cycle I D, Drain Current (A) 200 150 100 50 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS (on) vs Drain Current 1.2 1.15 1.1 1.05 1 0.95 0.9 0 20 40 60 80 100 I D, Drain Current (A) 120 VGS =20V 7.5V 7V 6.5V 6V 5.5V T J=25C TJ =125C TJ =-55C 2 3 4 5 6 7 8 9 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 100 I D, DC Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to V GS=10V @ 44.5A 80 60 40 20 0 25 July, 2006 4-6 APTM20HM20FTG - Rev 2 VGS =10V 50 75 100 125 TC, Case Temperature (C) 150 www.microsemi.com APTM20HM20FTG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss Coss 2.5 2.0 1.5 1.0 0.5 0.0 ON resistance vs Temperature VGS=10V ID= 44.5A -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area 1000 I D, Drain Current (A) 100 limited by RDSon 100s 1ms 10 Single pulse T J=150C T C=25C 10ms DC line 1 1 10 100 1000 VDS , Drain to Source Voltage (V) 10000 VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 12 VDS=40V ID=75A 10 TJ=25C VDS=100V 8 6 4 2 0 0 25 50 75 VDS=160V 1000 Crss 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 100 125 Gate Charge (nC) July, 2006 www.microsemi.com 5-6 APTM20HM20FTG - Rev 2 APTM20HM20FTG Delay Times vs Current Rise and Fall times vs Current 90 80 td(on) and td(off) (ns) 160 140 td(off) t r and tf (ns) VDS=133V RG=5 TJ=125C L=100H 70 60 50 40 30 20 10 0 25 50 75 100 120 100 80 60 40 20 0 150 0 VDS=133V RG=5 T J=125C L=100H tf tr td(on) 125 25 50 75 100 125 150 ID, Drain Current (A) Switching Energy vs Current ID, Drain Current (A) 1200 1000 Eon and Eoff (J) Switching Energy vs Gate Resistance 1500 Switching Energy (J) 1250 1000 750 500 250 Eoff VDS=133V ID=75A T J=125C L=100H 800 600 400 200 0 0 VDS=133V RG=5 T J=125C L=100H Eon Eoff Eoff Eon 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 I D, Drain Current (A) Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 Operating Frequency vs Drain Current 300 Frequency (kHz) 250 200 150 100 50 0 10 20 30 40 50 60 70 ID, Drain Current (A) 80 ZCS Hard switching VDS=133V D=50% RG=5 T J=125C T C=75C ZVS IDR, Reverse Drain Current (A) 350 100 T J=150C 10 TJ=25C 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V) July, 2006 Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTM20HM20FTG - Rev 2 Microsemi reserves the right to change, without notice, the specifications and information contained herein |
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