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| APTM20UM03FAG Single Switch MOSFET Power Module SK S D VDSS = 200V RDSon = 3m typ @ Tj = 25C ID = 580A @ Tc = 25C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration * AlN substrate for improved thermal performance Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Low profile * RoHS Compliant G DK DK S D SK G Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Tc = 25C Max ratings 200 580 434 2320 30 3.6 2270 100 50 3000 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTM20UM03FAG Rev 1 July, 2006 APTM20UM03FAG All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Typ Tj = 25C Tj = 125C 3 3 VGS = 10V, ID = 290A VGS = VDS, ID = 15mA VGS = 30 V, VDS = 0V Max 500 3000 3.6 5 400 Unit A m V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 580A Inductive switching @ 125C VGS = 15V VBus = 133V ID = 580A R G = 0.8 Inductive switching @ 25C VGS = 15V, VBus = 133V ID = 580A, R G = 0.8 Inductive switching @ 125C VGS = 15V, VBus = 133V ID = 580A, R G = 0.8 Min Typ 43.3 13.9 0.87 840 318 402 32 64 88 116 5 5.6 5.6 5.9 Max Unit nF nC ns mJ mJ Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Min Typ Tc = 25C Tc = 80C VGS = 0V, IS = - 580A Tj = 25C Tj = 125C Tj = 25C Tj = 125C 5.4 20.4 IS = - 580A VR = 500V diS/dt = 600A/s Max 580 434 1.3 8 230 450 Unit A V V/ns ns C July, 2006 2-6 APTM20UM03FAG Rev 1 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 580A di/dt 700A/s VR VDSS Tj 150C www.microsemi.com APTM20UM03FAG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, Isol<1mA, 50/60Hz Min 2500 -40 -40 -40 3 2 Typ Max 0.055 150 125 100 5 3.5 280 Unit C/W V C N.m g Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTM20UM03FAG Rev 1 July, 2006 APTM20UM03FAG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.06 Thermal Impedance (C/W) 0.05 0.04 0.03 0.02 0.01 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 0.1 1 10 Single Pulse 0 0.00001 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics VGS=15V 10V 4000 ID, Drain Current (A) Transfert Characteristics 1400 ID, Drain Current (A) 1200 1000 800 600 400 200 0 0 TJ=25C TJ=125C TJ=-55C VDS > ID(on)xRDS (on)MAX 250s pulse test @ < 0.5 duty cycle 3000 9V 8.5V 8V 7.5V 2000 1000 7V 6.5V 0 0 4 8 12 16 20 24 28 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A) Normalized to V GS=10V @ 290A 1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 600 500 400 300 200 100 0 1.1 1 VGS=10V VGS=20V 0.9 0.8 0 225 450 675 900 ID, Drain Current (A) 25 50 75 100 125 150 July, 2006 4-6 APTM20UM03FAG Rev 1 TC, Case Temperature (C) www.microsemi.com APTM20UM03FAG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) Coss 10000 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area 10000 limited by RDSon VGS=10V ID= 290A 1000 100s 1ms 10ms 100 Single pulse TJ=150C TC=25C 1 10 100ms 1 10 100 1000 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 I D=580A V DS=40V 12 TJ =25C 10 8 6 4 2 0 0 120 240 360 480 600 720 840 960 Gate Charge (nC) July, 2006 VDS=100V VDS=160V 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5-6 APTM20UM03FAG Rev 1 APTM20UM03FAG Delay Times vs Current 120 100 t d(on) and td(off) (ns) 80 60 40 20 0 100 200 300 400 500 600 700 800 900 I D, Drain Current (A) Switching Energy vs Current 12 Switching Energy (mJ) 10 Eon and Eoff (mJ) 8 6 4 2 E off V DS=133V RG=0.8 T J=125C L=100H Eoff VDS=133V RG=0.8 T J=125C L=100H Rise and Fall times vs Current 160 140 t r and tf (ns) V DS=133V R G=0.8 T J=125C L=100H t d(off) 120 100 80 60 40 20 tf td(on) tr 0 100 200 300 400 500 600 700 800 900 ID, Drain Current (A) Switching Energy vs Gate Resistance 20 18 16 14 12 10 8 6 4 0 1 2 3456 7 Gate Resistance (Ohms) 8 9 VDS=133V ID=580A TJ=125C L=100H Eoff Eon Eon 0 100 200 300 400 500 600 700 800 900 I D, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 350 300 Frequency (kHz) 250 200 150 100 50 0 70 170 V DS=133V D=50% RG=0.8 T J=125C T C=75C ZCS ZVS Source to Drain Diode Forward Voltage 10000 1000 100 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2006 TJ=150C T J=25C Hard switching 270 370 470 570 I D, Drain Current (A) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTM20UM03FAG Rev 1 |
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