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APTM50AM38SCTG
Phase leg
Series & SiC parallel diodes
VDSS = 500V RDSon = 38m typ @ Tj = 25C ID = 90A @ Tc = 25C
Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated * Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration
MOSFET Power Module
NTC2 VBUS Q1
G1 OUT S1 Q2
G2
0/VBU S S2 NTC1
* * * *
OUT VBUS OUT
0/ VBUS
S1 G1
S2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant Max ratings 500 90 67 360 30 45 694 46 50 2500 Unit V A V m W A mJ
July, 2006 1-8 APTM50AM38SCTG - Rev 2
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTM50AM38SCTG
All ratings @ Tj = 25C unless otherwise specified
Symbol IDSS RDS(on) VGS(th) IGSS
Electrical Characteristics
Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
Test Conditions
VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V
Min Tj = 25C
T j = 125C
Typ
VGS = 10V, ID = 45A VGS = VDS, ID = 5mA VGS = 30 V, VDS = 0V
38 3
Max 200 1000 45 5 150
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 90A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 90A R G = 2 Inductive switching @ 25C VGS = 15V, VBus = 333V ID = 90A, R G = 2 Inductive switching @ 125C VGS = 15V, VBus = 333V ID = 90A, R G = 2
Min
Typ 11.2 2.36 0.18 246 66 130 18 35 87 77 906 1452 1490 1692
Max
Unit nF
nC
ns
J
J
Series diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
Test Conditions VR=200V IF = 90A IF = 180A IF = 90A IF = 90A VR = 133V di/dt = 600A/s Tj = 25C Tj = 125C Tc = 85C
Min 200
Typ
Max 500 750
Unit V A A
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
Tj = 25C Tj = 125C Tj = 25C Tj = 125C
24 48 99 450
ns nC
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2-8
APTM50AM38SCTG - Rev 2
July, 2006
Tj = 125C
90 1.1 1.4 0.9
1.15 V
APTM50AM38SCTG
Parallel diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC Q Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 50A Test Conditions VR=600V Tj = 25C Tj = 175C Tc = 125C Tj = 25C Tj = 175C Min 600 Typ 250 500 50 1.6 2.0 70 325 250 Min Transistor Series diode 2500 -40 -40 -40 2.5 Typ Max 0.18 0.45 0.5 150 125 100 4.7 160 Typ 50 3952 Max Max 1000 5000 1.8 2.4 Unit V A A V nC pF
IF = 50A, VR = 300V di/dt =1400A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance
Unit C/W V C N.m g Unit k K
Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M5
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
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3-8
APTM50AM38SCTG - Rev 2
July, 2006
APTM50AM38SCTG
SP4 Package outline (dimensions in mm)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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4-8
APTM50AM38SCTG - Rev 2
July, 2006
APTM50AM38SCTG
Typical MOSFET Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 Thermal Impedance (C/W) 0.9 0.16 0.7 0.12 0.08 0.04 0.5 0.3 0.1 0.05 0 0.00001 0.0001 Single Pulse
0.001 0.01 0.1 rectangular Pulse Duration (Seconds)
1
10
Low Voltage Output Characteristics 350 I D, Drain Current (A)
VGS=10&15V
Transfert Characteristics 250 I D, Drain Current (A)
VDS > ID(on)xR DS(on)MAX 250s pulse test @ < 0.5 duty cycle
300 250 200 150 100 50 0 0
8V 7.5V 7V 6.5V 6V 5.5V
200 150 100
TJ=25C
50
T J=125C
0 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current I D, DC Drain Current (A)
Normalized to VGS=10V @ 45A VGS=10V
TJ=-55C
25
0
1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V)
8
RDS(on) Drain to Source ON Resistance
1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0
DC Drain Current vs Case Temperature 100 80 60 40 20 0
V GS=20V
50
100
150
200
ID, Drain Current (A)
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5-8
APTM50AM38SCTG - Rev 2
July, 2006
25
50 75 100 125 TC, Case Temperature (C)
150
APTM50AM38SCTG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS (TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss 1000 Crss 100 VGS , Gate to Source Voltage (V) 1000
limited by R DSon
2.5 2.0 1.5 1.0 0.5 0.0
ON resistance vs Temperature
VGS =10V ID=45A
-50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
100s
100
limited by RDSon
10
Single pulse TJ =150C TC=25C 1
1ms 10ms
1 10 100 1000 VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 14 V DS =100V I D=90A 12 T =25C J V =250V
DS
10 8 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC)
July, 2006
VDS=400V
10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50
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6-8
APTM50AM38SCTG - Rev 2
APTM50AM38SCTG
Delay Times vs Current 100 80 60 40 20 0 20 40 60 80 100 120 ID, Drain Current (A) 140
V DS =333V RG =2 T J=125C L=100H
Rise and Fall times vs Current
td(off)
120 100
tr and t f (ns)
VDS=333V RG=2 T J=125C L=100H
t d(on) and td(off) (ns)
tf
80 60 40 20 0 20
td(on)
tr
40
60
80
100
120
140
I D, Drain Current (A) Switching Energy vs Gate Resistance
Switching Energy vs Current
4
Switching Energy (mJ)
8
Switching Energy (mJ)
3 2 1
VDS=333V RG=2 T J=125C L=100H
Eoff
7 6 5 4 3 2 1 0 0
VDS=333V ID=90A TJ=125C L=100H
Eoff
Eon
Eon
Eoff 0 20 40 60 80 100 120 140
I D, Drain Current (A) Operating Frequency vs Drain Current
5
10
15
20
25
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage
350
Frequency (kHz)
300 250 200 150 100 50 0 20 30
ZCS
ZVS
V DS=333V D=50% R G=2 T J=125C T C=75C
IDR, Reverse Drain Current (A)
400
1000
100
T J=150C
Hard switching
10
T J=25C
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
July, 2006
40
50
60
70
80
ID, Drain Current (A)
VSD, Source to Drain Voltage (V)
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7-8
APTM50AM38SCTG - Rev 2
APTM50AM38SCTG
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse
0 0.00001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics
100
I F Forward Current (A)
TJ=25C
IR Reverse Current (A)
1000 800 600 400 200 0 200 TJ =175C TJ =125C TJ =75C TJ=25C
75 50 25 0 0 0.5
TJ =75C
TJ=175C TJ =125C
1
1.5
2
2.5
3
3.5
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
300 400 500 600 700 VR Reverse Voltage (V)
800
2000 C, Capacitance (pF) 1500
1000 500 0
July, 2006 8-8 APTM50AM38SCTG - Rev 2
1
10 100 VR Reverse Voltage
1000
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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