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APTM50HM35F
Full - Bridge MOSFET Power Module
VDSS = 500V RDSon = 35mW max @ Tj = 25C ID = 99A @ Tc = 25C
Application * * * * Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control
Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
* *
OUT1 G1 S1 VBUS 0/VBUS G2 S2
* Benefits
S3 G3 OUT2
S4 G4
* * * *
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 500 99 74 396 30 35 781 51 50 3000 Unit V A V mW W A mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-6
APTM50HM35F- Rev 1 May, 2004
Tc = 25C
APTM50HM35F
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 375A
VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V
Min 500 Tj = 25C Tj = 125C 3
Typ
Max 375 1500 35 5 150
Unit V A mW V nA
VGS = 10V, ID = 49.5A VGS = VDS, ID = 5mA VGS = 30 V, VDS = 0V
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 99A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 99A RG = 1W Inductive switching @ 25C VGS = 15V, VBus = 333V ID = 99A, RG = 1 Inductive switching @ 125C VGS = 15V, VBus = 333V ID = 99A, RG = 1 Min Typ 14 2.8 0.18 280 80 140 21 38 75 93 2070 1690 3112 2026 J J ns Max Unit nF
nC
Source - Drain diode ratings and characteristics
Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery w trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25C Tc = 80C VGS = 0V, IS = - 99A IS = - 99A VR = 250V diS/dt = 200A/s IS = - 99A VR = 250V diS/dt = 200A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C 5.2 19.2 Min Typ Max 99 74 1.3 15 270 540 Unit A V V/ns ns C
APTM50HM35F- Rev 1 May, 2004
u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. w dv/dt numbers reflect the limitations of the circuit rather than the device itself. VR VDSS Tj 150C IS - 99A di/dt 700A/s
APT website - http://www.advancedpower.com
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APTM50HM35F
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 3 2
Typ
Max 0.16 150 125 100 5 3.5 280
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5
Package outline
APT website - http://www.advancedpower.com
3-6
APTM50HM35F- Rev 1 May, 2004
APTM50HM35F
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.18 Thermal Impedance (C/W) 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 400 ID, Drain Current (A) VGS=10&15V ID, Drain Current (A) 8V 300 250 200 150 100 50 0 25 0 2 4 6 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 120 ID, DC Drain Current (A)
Normalized to VGS=10V @ 49.5A
Transfert Characteristics
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
300
7V 200 6.5V 6V 5.5V 0 0 5V
TJ=25C
100
TJ=125C
TJ=-55C
5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current
RDS(on) Drain to Source ON Resistance
1.1
1.05
100 80 60 40 20 0
VGS=10V
1 VGS=20V 0.95
0.9 0 20 40 60 80 100 ID, Drain Current (A) 120
25
50 75 100 125 TC, Case Temperature (C)
150
APT website - http://www.advancedpower.com
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APTM50HM35F- Rev 1 May, 2004
APTM50HM35F
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss 10000 Coss 1000 ID, Drain Current (A) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS=10V ID=49.5A
limited by RDSon
100 us
100 1 ms 10 Single pulse TJ=150C 1 1 10 ms 100 ms
10 100 1000 VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 14 12 10 8 6 4 2 0 0 50 100 150 200 250 300 350 Gate Charge (nC)
VDS=400V
ID=99A TJ=25C
VDS=100V VDS=250V
1000 Crss 100
10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50
APT website - http://www.advancedpower.com
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APTM50HM35F- Rev 1 May, 2004
APTM50HM35F
Delay Times vs Current 80 70 td(on) and td(off) (ns) 60 50 40 30 20 10 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) Switching Energy vs Current 6 Switching Energy (mJ) 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) Switching Energy (mJ)
VDS=333V RG=1 TJ=125C L=100H VDS=333V RG=1 TJ=125C L=100H
Rise and Fall times vs Current 160 140 120 tr and tf (ns) 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 ID, Drain Current (A)
VDS=333V RG=1 TJ=125C L=100H
td(off)
tf
tr
td(on)
Switching Energy vs Gate Resistance 10
VDS=333V ID=99A TJ=125C L=100H
Eon
8 6 4 2 0 0
Eoff
Eon
Eoff
5
10
15
20
25
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000
Operating Frequency vs Drain Current 400 Frequency (kHz) 350 300 250 200 150 100 50 0 10 20 30 40 50 60 70 ID, Drain Current (A) 80 90
VDS=333V D=50% RG=1 TJ=125C
IDR, Reverse Drain Current (A)
450
100
TJ=150C TJ=25C
10
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
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APTM50HM35F- Rev 1 May, 2004

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