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4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones Technical Data
AT-36408
Features
* 4.8 Volt Pulsed Operation (pulse width = 577 sec, duty cycle = 12.5%) * +35.0 dBm Pout @ 900 MHz, Typ. * 65% Collector Efficiency @ 900 MHz, Typ. * 9 dB Power Gain @ 900 MHz, Typ. * Internal Input Pre-Matching Facilitates Cascading
SOIC-8 Surface Mount Plastic Package
Outline P8
Description
Hewlett Packard's AT-36408 combines internal input prematching with low cost, NPN power silicon bipolar junction transistors in a SOIC-8 surface mount plastic package. This device is designed for use as the output device for GSM Class IV handsets. At 4.8 volts, the device features +35 dBm pulsed output power, superior power added efficiency, and excellent gain, making the AT-36408 an excellent choice for battery powered systems. The AT-36408 is fabricated with Hewlett Packard's 10 GHz Ft SelfAligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of these devices.
Pin Configuration
BASE EMITTER 1 2 3 4 8 7 6 5 BASE EMITTER COLLECTOR EMITTER
Applications
* Output Power Device for GSM Class IV Handsets
COLLECTOR EMITTER
4-81
5965-5960E
AT-36408 Absolute Maximum Ratings
Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current[2] Peak Power Dissipation [2, 3] Junction Temperature Storage Temperature Units V V V A W C C Absolute Maximum[1] 1.4 16.0 9.5 1.7 8.6 150 -65 to 150 Thermal Resistance[4]: jc = 60C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. Pulsed operation, pulse width = 577 sec, duty cycle = 12.5%. 3. Derate at 133.3 mW/C for TC > 85 C. TC is defined to be the temperature of the collector pins 3 and 6, where the lead contacts the circuit board. 4. Using the liquid crystal technique, VCE = 4.5 V, Ic =100 mA, Tj =150C, 1- 2 m "hot-spot" resolution.
Electrical Specifications, TC = 25C
Symbol Parameters and Test Conditions
Freq. = 900 MHz, VCE = 4.8 V, ICQ = 50 mA, pulsed operation, pulse width = 577 sec, duty cycle = 12.5%, Test Circuit A,unless otherwise specified
Units
Min.
Typ. Max.
Pout C H2 H3
Output Power [1] Collector Efficiency [1] 2nd Harmonic[1] 3rd Harmonic[1] Mismatch Tolerance, No Damage [1]
Pin = +26 dBm Pin = +26 dBm F0 = 900 MHz F0 = 900 MHz Pout = +35 dBm any phase, 2 sec duration IE = 0.8 mA, open collector IC = 4.0 mA, open emitter IC = 20.0 mA, open base VCE = 3 V, IC = 180 mA VCEO = 5 V
dBm % dBc dBc
+34.0 55
+35.0 65 -50 -40 7:1
BVEBO BVCBO BVCEO hFE ICEO
Emitter-Base Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Forward Current Transfer Ratio Collector Leakage Current
V V V -- A
1.4 16.0 9.5 80 150 330 50
Note: 1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A (GSM).
4-82
AT-36408 Typical Performance, TC = 25C
Frequency = 900 MHz, VCE = 4.8 V, ICQ = 50 mA, pulsed operation, pulse width = 577 sec, duty cycle = 12.5%, Test Circuit A (GSM), unless otherwise specified.
38 34 30 26 22 18 14 COLLECTOR EFFICIENCY (%) COLLECTOR EFFICIENCY (%)
source = 0.88 -171 load = 0.85 +172
Pout
95 80 65 50
38
source = 0.88 -171 load = 0.85 +172
80 70 60 50 40 30 20 10 0 6
source = 0.88 -171 load = 0.85 +172
OUTPUT POWER (dBm)
OUTPUT POWER (dBm)
33
28
c
23 3.6 V 4.8 V 6.0 V 6 8 10 12 14 16 18 20 22 24 26 INPUT POWER (dBm)
35 20
18 13
3.6 V 4.8 V 6.0 V 8 10 12 14 16 18 20 22 24 26 28 INPUT POWER (dBm)
6
5 8 10 12 14 16 18 20 22 24 26 28 INPUT POWER (dBm)
Figure 1. Output Power and Collector Efficiency vs. Input Power.
Figure 2. Output Power vs. Input Power Over Bias Voltage.
Pin = +26 dBm
Figure 3. Collector Efficiency vs. Input Power Over Bias Voltage.
36 35 OUTPUT POWER (dBm) 34 33 32 31 30 29 28 27 15
COLLECTOR EFFICIENCY (%)
source = 0.88 -171 load = 0.85 +172
OUTPUT POWER (dBm)
36.0 35.8 35.6 35.4 35.2 35.0 34.8 34.6 34.4 34.2 27 28 34.0 880
source = 0.88 -171 load = 0.85 +172
Pout
75
0 Output R.L.
71
-5 RETURN LOSS (dB)
67
-10
c
63
-15 Input R.L. -20
TC = +85C TC = +25C TC = -40C 17 19 21 23 25
59
890
900
910
55 920
-25 800
source = 0.88 -171 load = 0.85 +172
850 900 950 1000 FREQUENCY (MHz)
INPUT POWER (dBm)
FREQUENCY (MHz)
Figure 4. Output Power vs. Input Power Over Temperature.
Figure 5. Output Power and Collector Efficiency vs. Frequency.
Note: Tuned at 900 MHz, then swept over frequency.
Figure 6. Input and Output Return Loss vs. Frequency.
4-83
AT-36408 Typical Large Signal Impedances
VCE = 4.8 V, ICQ = 50 mA, Pulsed Operation, Pout = +35.0 dBm Freq. MHz 880 890 900 910 915 920 Mag. 0.882 0.885 0.887 0.890 0.891 0.893
source
20 19 18
Mag. 0.847 0.849 0.851 0.853 0.854 0.855
load
Ang. -170.0 -170.5 -171.1 -171.4 -169.0 -168.4
Ang. 172.7 172.2 171.6 171.1 168.4 168.2
Ccb (pF)
17 16 15 14 13 12 0 2 4 6 8 10
Vcb (V)
Figure 7. Collector-Base Capacitance vs. Collector-Base Voltage (DC Test).
SPICE Model Parameters
Die Model
CPad C CPad B
Rlead Llead Cpkg2 Cpkg1 R= 1 Lwbase Rwbase Llead Cbase L=0 Cpkg1 Cpkg2 R=1 Llead Lwbb Rwbb LE1 Die LE2 Lwbb Rwbb LE1 LE2
Packaged Model
Lwire Rwire Lwire Rwire Lwbase Rwbase Lwbase Cbase Rwbase Lwbase Rwbase L=0 Lwbb Rwbb LE1 Die LE2
CPad
B
Die Area = 1.2 CPad = 0.3 pF Label BF IKF ISE NE VAF NF TF XTF VTF ITF PTF XTB BR IKR ISC NC VAR NR Value 280 299.9 9.9E-11 2.399 33.16 0.9935 1.6E-11 0.006656 0.02785 0.001 23 0 54.61 81 8.7E-13 1.587 1.511 0.9886
Die
E1 Label TR EG IS XTI CJC VJC MJC XCJC FC CJE VJE MJE RB IRB RBM RE RC Value 1E-9 1.11 3.598E-15 3 0.8E-12 0.4831 0.2508 0.001 0.999 6.16E-12 1.186 0.5965 0.752 0 0.01 1.27 0.107
E2
Rlead E1
Rlead C Cpkg1 Rlead E2
Cpkg2 Llead
Die LE1 LE2
Label Rlead Llead Rwire Lwire Cpkg1 Cpkg2 LE1
Value 0.63 1.45 nH 1.3 0.52 nH 0.4 pF 1.2 pF 0.3 nH
Label LE2 Cbase Rwbase Lwbase Rwbb Lwbb
Value 0.00064 nH 46.0 pF 0.2 1.19 nH 0.1 0.1 nH
4-84
AT-36408 Typical Scattering Parameters, Common Emitter, ZO = 50
VCE = 3.6 V, Ic = 200 mA, Tc = 25C Freq. S11 GHz Mag. Ang. dB
0.05 0.96 -175 22.3
S21 Mag.
13.08
Ang.
93
dB
-38.4
S12 Mag.
0.012
S22 Ang.
11
Mag.
0.74
Ang.
-169
0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50
0.96 0.96 0.94 0.90 0.84 0.79 0.92 0.97
-178 177 173 169 168 170 175 169
16.4 8.8 4.2 3.4 4.2 4.6 -1.2 -9.6
6.61 2.76 1.63 1.49 1.63 1.70 0.87 0.33 13.42 6.79 2.83 1.66 1.51 1.64 1.71 0.89 0.34 13.60 6.88 2.87 1.68 1.52 1.64 1.70 0.90 0.35
88 80 66 46 24 0 -68 -98 93 88 80 66 46 24 0 -67 -97 93 88 79 65 45 23 0 -67 -97
-37.7 -36.5 -34.4 -32.0 -32.0 -34.0 -37.1 -30.2 -37.7 -37.7 -36.5 -34.4 -32.4 -32.0 -34.0 -37.1 -30.2 -37.7 -37.1 -35.9 -34.0 -32.0 -32.0 -34.0 -37.7 -30.2
0.013 0.015 0.019 0.025 0.025 0.020 0.014 0.031 0.013 0.013 0.015 0.019 0.024 0.025 0.020 0.014 0.031 0.013 0.014 0.016 0.020 0.025 0.025 0.020 0.013 0.031
13 24 33 27 10 -14 126 97 11 13 23 32 26 9 -14 126 97 12 14 23 30 24 8 -14 125 96
0.74 0.75 0.73 0.71 0.72 0.81 1.01 0.96 0.74 0.73 0.74 0.72 0.70 0.72 0.81 1.01 0.96 0.73 0.72 0.73 0.71 0.69 0.72 0.81 1.01 0.95
-174 -177 -177 -172 -165 -160 -172 -177 -169 -174 -177 -176 -172 -164 -160 -171 -177 -169 -174 -177 -176 -171 -164 -159 -171 -177
VCE = 4.8 V, Ic = 200 mA, Tc = 25C 0.05 0.96 -174 22.6 0.10 0.96 -178 16.6 0.25 0.96 178 9.0 0.50 0.94 173 4.4 0.75 0.90 169 3.6 0.90 0.84 168 4.3 1.00 0.80 170 4.6 1.25 0.92 175 -1.0 1.50 0.97 169 -9.4 VCE = 6.0 V, Ic = 200 mA, Tc = 25C 0.05 0.96 -174 22.7 0.10 0.96 -178 16.7 0.25 0.96 178 9.2 0.50 0.94 173 4.5 0.75 0.90 169 3.7 0.90 0.85 168 4.3 1.00 0.80 170 4.6 1.25 0.92 175 -1.0 1.50 0.97 169 -9.2
Typical Performance
35 30 25 20 MSG MAG 35 30 25 MSG 20 MSG MAG 35 30 25 MSG 20 MSG MAG MSG
GAIN (dB)
GAIN (dB)
15 10 5 0 -5 -10 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 FREQUENCY (GHz) |S21|2
15 10 5 0 -5 -10 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 FREQUENCY (GHz) |S21|2
GAIN (dB)
15 10 5 0 -5 -10 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 FREQUENCY (GHz) |S21|2
Figure 8. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VCE = 3.6V, Ic = 200 mA.
Figure 9. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VCE = 4.8V, Ic = 200 mA.
Figure 10. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VCE = 6.0V, Ic = 200 mA.
4-85
Test Circuit A: Test Circuit Board Layout @ 900 MHz (GSM)
VBB VBB
R2 R1 T1 R3 C2 C3 L1 R4 C6 L2 R5 C7 C8 C9 9/96
VCC VCC
C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 R1 R2 R3 R4 R5 T1 L1 L2 39.0 pF 39.0 pF 100.0 nF 12.5 pF 11.5 pF 100.0 nF 39.0 pF 1.5 F 10.0 F 39.0 pF 2.2 619.0 2.2 10.0 10.0 MBT 2222A 18.0 H 18.0 H
38.1 (1.5)
C1
C4
C5
C10
INPUT
PA2 DEMO 76.2 (3.0)
B-MFG0140
OUTPUT
Pulse Test VCE = 4.8 V ICQ = 50 mA Freq. = 900 MHz
Test Circuit: FR-4 Microstrip, glass epoxy board Dielectric Constant = 4.5 Thickness = 0.79 (.031)
NOTE: Dimensions are shown in millimeters (inches).
Test Circuit A: Test Circuit Schematic Diagram @ 900 MHz (GSM)
VBB
Pulse Test VCE = 4.8 V ICQ = 50 mA Freq. = 900 MHz
VCC
2.2 B DC C E Transistor
619 2.2 10 100 nF
10 39 pF 80 /4 @ 900 MHz 39 pF 80 /4 @ 900 MHz 50 39 pF RF OUT = 4.88 (.192) 11.5 pF 100 nF 1.5 F 10 F
18 H
18 H
39 pF RF IN 12.5 pF
50 = 1.52 (.060)
4-86
Part Number Ordering Information
Part Number AT-36408-TR1 AT-36408-BLK No. of Devices 1000 25 Container 7" Reel Carrier Tape
Package Dimensions
SOIC-8 Surface Mount Plastic Package
1.27 (.050) 6x
3.80/4.00 (.1497/.1574)
5.84/6.20 (.230/.244)
Pin 1 1.35/1.75 (.0532/.0688) 4.72/5.00 (.186/.197)
0.38 0.10 (.015 .004) x 45
0/8
0.10 (.004)
0.33/0.51 (.013/.020) 8X
0.10/0.25 (.004/.0098) 0.41/1.27 (.016/.050)
0.19/0.25 (.0075/.0098)
Note: 1. Dimensions are shown in millimeters (inches).
4-87
Tape Dimensions and Product Orientation For Package SOIC-8
REEL
CARRIER TAPE USER FEED DIRECTION COVER TAPE
D0 t COVER TAPE P2
P0
10 PITCHES CUMULATIVE TOLERANCE ON TAPE 0.2 MM (0.008) EMBOSSMENT E
A KC B
F
W
USER FEED DIRECTION
P1 T CENTER LINES OF CAVITY
D1
DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION WIDTH THICKNESS WIDTH TAPE THICKNESS CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION)
SYMBOL A B K P1 D1 D0 P0 E W t C T F P2
SIZE (mm) 6.45 0.10 5.13 0.10 2.11 0.10 8.00 0.10 1.50 min. 1.50 + 0.10/-0 4.00 0.10 1.75 0.10 8.00 0.30 0.255 0.013 9.19 0.10 0.051 0.010 5.51 0.05 2.00 0.05
SIZE (INCHES) 0.254 0.004 0.202 0.004 0.083 0.004 0.315 0.004 0.059 min. 0.059 + 0.004/-0 0.157 0.004 0.069 0.004 0.315 0.012 0.0100 0.0005 0.362 0.004 0.0020 0.0004 0.217 0.002 0.079 0.002
PERFORATION
CARRIER TAPE COVER TAPE DISTANCE BETWEEN CENTERLINE
4-88

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