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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03Z Plastic-Encapsulate Diodes FBAP50-05W DESCRIPTION Silicon planar FEATURES Two elements in common cathode configuration in a small-sized package Low diode capacitance Low diode forward resistance.. APPLICATION General RF applications. For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) pin Diodes WBFBP-03Z (2x2x0.5) unit: mm 3 1 2 MARKING: W4 3 W4 1 2 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 Parameter Continuous reverse voltage Continuous Forward Current Power Dissipation (TA=90) thermal resistance from junction to soldering point Junction temperature Storage temperature range Symbol VR IF Pd Rthj-s Tj TSTG Limits 50 50 150 250 -65~+150 -65~+150 Unit V mA mW K/W Electrical Characteristics Parameter @TA=25 Symbol VR VF IR Cd1 Cd2 Cd3 rD rD rD L LS 1.05 1.6 Min. 50 1.1 100 1.1 0.6 0.5 40 25 5 Typ. Max. Unit V V nA pF pF pF S nH Conditions IR=10A IF=50mA VR=50V VR=0V,f=1MHz VR=1V,f=1MHz VR=5V,f=1MHz IF=0.5mA , f=100MHz IF=1mA , f=100MHz IF=10mA , f=100MHz When switched from IF=10mA to IR=6mA; RL=100;measured at IR=3mA IF=100mA; f=100MHz Continuous reverse voltage Forward voltage Reverse current Diode capacitance Diode forward resistance charge carrier life time series inductance Typical Characteristics FBAP50-05W Symbol A A1 b D E D1 E1 e L k z Dimensions In Millimeters Min. Max. 0.450 0.550 0.000 0.100 0.150 0.250 1.900 2.100 1.900 2.100 1.100 REF. 0.600 REF. 1.300 TYP. 0.500 REF. 0.400 REF. 0.500 REF. Dimensions In Inches Min. Max. 0.018 0.022 0.000 0.004 0.006 0.010 0.075 0.083 0.075 0.083 0.043 REF. 0.024 REF. 0.052 TYP. 0.020 REF. 0.016 REF. 0.020 REF. |
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