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  Datasheet File OCR Text:
 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
ISSUE 1 SEPT 93 FEATURES * 1 Amp continuous current * Ptot= 800 mW
BC639
E C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg VALUE 80 80 5 1 800 -55 to +150
TO92 UNIT V V V A mW C
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO MIN. 80 80 5 0.1 0.5 1.0 25 40 25 200 TYP. MAX. UNIT V V V
A
CONDITIONS. IC=100A, IE=0 IC=10mA, IB=0* IE=10A, IC=0 VCB=30V IC=500mA, IB=50mA* IC=500mA,VCE=2V* IC=5mA, VCE=2V* IC=150mA, VCE=2V* IC=500mA, VCE=2V*
Collector Cut-Off Current ICBO Collector-Emitter Saturation Voltage Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio Transition Frequency VCE(sat) VBE(on) hFE
V V
160 MHz
fT
IC=50mA, VCE=2V f=100MHz
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
3-18


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