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| LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon 3 COLLECTOR 1 BASE BCW33LT1 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V CEO V CBO V EBO Value 20 30 5.0 100 Unit Vdc Vdc Vdc mAdc CASE 318-08, STYLE 6 SOT-23 (TO-236AB) IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ , Tstg 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C DEVICE MARKING BCW33LT1 = D3 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 2.0mAdc, I B= 0 ) Collector-Base Breakdown Voltage (I C = 10 Adc, I B = 0) Emitter-Base Breakdown Voltage (I E= 10 Adc, I C = 0) Collector Cutoff Current (VCB = 32 Vdc, IE = 0 ) (VCB = 32 Vdc, IE = 0, TA = 100C) 1. FR- 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)EBO I CBO -- -- 100 10 nAdc Adc 5.0 -- Vdc V (BR)CBO V (BR)CEO 32 -- Vdc 32 -- Vdc M8-1/6 LESHAN RADIO COMPANY, LTD. BCW33LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain ( IC= 2.0 mAdc, VCE = 5.0 Vdc ) Collector-Emitter Saturation Voltage ( IC = 10 mAdc, IB = 0.5 mAdc ) Base-Emitter On Voltage ( IC = 2.0 mAdc, VCE = 5.0 Vdc ) hFE V CE(sat) 420 -- 800 0.25 -- Vdc V BE(on) 0.55 0.70 Vdc SMALL-SIGNAL CHARACTERISTICS Output Capacitance ( VCB = 10 Vdc,IE= 0, f = 1.0 MHz) Noise Figure ( I C = 0.2 mAdc, V CE = 5.0 Vdc, R S = 2. 0 k, f = 1.0 kHz, BW = 200 Hz ) C obo NF -- -- 4.0 10 pF dB EQUIVALENT SWITCHING TIME TEST CIRCUITS +3.0 V t 1 +3.0 V 300 ns DUTY CYCLE = 2% - 0.5 V <1.0 ns +10.9 V 275 10 k 10 < t 1 < 500 s DUTY CYCLE = 2% 0 - 9.1 V +10.9 V 275 10 k C S < 4.0 pF* 1N916 <1.0 ns C S < 4.0 pF* *Total shunt capacitance of test jig and connectors Figure 1. Turn-On Time Figure 2. Turn-Off Time M8-2/6 LESHAN RADIO COMPANY, LTD. BCW33LT1 TYPICAL NOISE CHARACTERISTICS (V CE = 5.0 Vdc, T A = 25C) 20 100 IC= 1.0mA e n , NOISE VOLTAGE (nV) BANDWIDTH = 1.0 Hz 50 I n , NOISE CURRENT (pA) RS = 0 IC=1.0mA 300A BANDWIDTH = 1.0 Hz R~ ~ S 300A 10 20 10 5.0 2.0 1.0 0.5 0.2 100A 7.0 5.0 100A 3.0 10 A 30A 30A 10A 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 2.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 0.1 f, FREQUENCY (Hz) f, FREQUENCY (Hz) Figure 3. Noise Voltage Figure 4. Noise Current NOISE FIGURE CONTOURS (V CE = 5.0 Vdc, T A = 25C) 500k 200k 1.0M BANDWIDTH = 1.0 Hz 500k BANDWIDTH = 1.0 Hz 100k 50k 20k 10k 5.0k 2.0k 1.0k 500 200 100 50 10 20 30 50 70 100 200 300 500 700 1.0K R S , SOURCE RESISTANCE ( ) R S , SOURCE RESISTANCE ( ) 200k 100k 50k 20k 10k 5.0k 2.0k 1.0k 500 200 100 10 20 30 50 70 100 200 300 500 700 1.0K 2.0dB 3.0 dB 4.0dB 6.0 dB 10 dB 1.0dB 2.0 dB 3.0dB 5.0dB 8.0dB I C , COLLECTOR CURRENT (A) I C , COLLECTOR CURRENT (A) Figure 5. Narrow Band, 100 Hz 500k 200k 100k 50k 20k 10k 5.0k 2.0k 1.0k 500 200 100 50 10 20 30 50 70 100 200 Figure 6. Narrow Band, 1.0 kHz R S , SOURCE RESISTANCE ( ) 10 Hz to 15.7KHz Noise Figure is Defined as: NF = 20 log 10 1.0dB 2.0dB 5.0 dB 8.0 dB 300 500 700 1.0K ( ---------------) 4KTR S e n 2 + 4KTRS + I n2 R S2 1/ 2 3.0 dB e n = Noise Voltage of the Transistor referred to the input. (Figure 3) I n = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10 -23 j/K) T = Temperature of the Source Resistance (K) R s = Source Resistance ( ) I C , COLLECTOR CURRENT (A) Figure 7. Wideband 8 M8-3/6 LESHAN RADIO COMPANY, LTD. BCW33LT1 TYPICAL STATIC CHARACTERISTICS V CE , COLLECTOR- EMITTER VOLTAGE (VOLTS) 0.8 T J = 25C BCW33LT1 I C= 1.0 mA 10 mA 50 mA 100 mA I C , COLLECTOR CURRENT (mA) 1.0 100 80 T A = 25C PULSE WIDTH =300 s DUTY CYCLE<2.0% I B= 500 A 400 A 300 A 0.6 60 200 A 40 0.4 100 A 20 0.2 0 0.002 0.0050.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 0 5.0 10 15 20 25 30 35 40 I B , BASE CURRENT (mA) V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. Collector Saturation Region 1.4 Figure 9. Collector Characteristics V , TEMPERATURE COEFFICIENTS (mV/C) 1.6 T J = 25C 1.2 *APPLIES for I C / I B< h FE / 2 0.8 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0 VC for V CE(sat) 25C to 125C -55C to 25C V BE(sat) @ I C /I B = 10 V BE(on)@ V CE= 1.0 V -0.8 0.4 0.2 25C to 125C -1.6 VB for V BE -55C to 25C V CE(sat) @ I C /I B = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 -2.4 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 10. "On" Voltages Figure 11. Temperature Coefficients M8-4/6 LESHAN RADIO COMPANY, LTD. BCW33LT1 TYPICAL DYNAMIC CHARACTERISTICS 300 200 1000 100 70 V CC= 3.0 V IC /I B= 10 T J= 25C 700 500 300 200 ts t, TIME (ns) 30 20 10 7.0 5.0 3.0 1.0 tr t, TIME (ns) 50 100 70 50 30 20 10 1.0 tf VCC= 3.0 V IC /I B= 10 IB1=IB2 T J= 25C 2.0 3.0 5.0 7.0 10 20 30 50 70 100 td @ V BE(off)= 0.5 Vdc 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mA) f T, CURRENT- GAIN -- BANDWIDTH PRODUCT (MHz) I C , COLLECTOR CURRENT (mA) Figure 12. Turn-On Time 10.0 Figure 13. Turn-Off Time 500 300 T J = 25C f =100MHz V CE=20 V 5.0 V C, CAPACITANCE (pF) 7.0 5.0 T J= 25C f = 1.0MHz C ib C ob 200 3.0 100 2.0 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 I C , COLLECTOR CURRENT (mA) V R , REVERSE VOLTAGE (VOLTS) Figure 14. Current-Gain -- Bandwidth Product r( t) TRANSIENT THERMAL RESISTANCE(NORMALIZED) 1.0 0.7 0.5 0.3 0.2 Figure 15. Capacitance D = 0.5 0.2 0.1 FIGURE 19A 0.05 P(pk) 0.02 0.01 t SINGLE PULSE 1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 DUTY CYCLE, D = t 1 / t 2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 (SEE AN-569) t 2 Z JA(t) = r(t) * RJA T J(pk) - T A = P (pk) Z JA(t) 1.0k 2.0k 5.0k 10k 20k 50k 100k 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 t, TIME (ms) Figure 16. Thermal Response M8-5/6 LESHAN RADIO COMPANY, LTD. BCW33LT1 104 DESIGN NOTE: USE OF THERMAL RESPONSE DATA V CC = 30 Vdc 103 102 I CEO 101 100 I CBO AND I CEX @ V BE(off) = 3.0 Vdc 10-1 10-2 -4 -2 0 +20 +40 +60 +80 +100 +120 +140 +160 T J , JUNCTION TEMPERATURE (C) Figure 16A. A train of periodical power pulses can be represented by the model as shown in Figure 16A. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 16 was calculated for various duty cycles. To find Z JA(t) , multiply the value obtained from Figure 16 by the steady state value R JA . Example: The MPS3904 is dissipating 2.0 watts peak under the following conditions: t 1 = 1.0 ms, t 2 = 5.0 ms. (D = 0.2) Using Figure 16 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore T = r(t) x P (pk) x R JA = 0.22 x 2.0 x 200 = 88C. For more information, see AN-569. I C , COLLECTOR CURRENT (nA) M8-6/6 |
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