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SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
ISSUE 4 - MARCH 2001 FEATURES * High breakdown and low saturation voltages APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPE:BF720 PARTMARKING DETAILS:BF721
BF721
C
E C B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb =25C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j :T stg VALUE -300 -300 -5 -100 -50 -2 -55 to +150
UNIT V V V mA mA W C
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Collector-Base BF721 Breakdown Voltage Collector-Emitter BF721 Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL V (BR)CBO MIN. -300 TYP. MAX. UNIT V CONDITIONS. I C=-10A, I E=0
V (BR)CEO
-300
V
I C=-1mA, I B=0*
V (BR)EBO
-5 -10 -50 -10 -10 -0.6 -0.9 -50 100 0.8
V nA nA A
I E=-100A, I C=0 V CB=-200V, I E=0
Collector Cut-Off Current I CBO Collector Cut-Off Current I CER
VCE=-200V, RBE=2.7K VCE=-200V, RBE=2.7K V EB=-5V, I C=0 I C=-30mA, I B=-5mA* I C=-20mA, I B=-2mA* I C=-25mA, V CE=-20V*
Emitter Cut-Off Current I EBO Collector-Emitter Saturation Voltage Base Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance V CE(sat) V BE(sat) h FE fT C obo
A
V V
MHz pF
I C=-10mA, V CE=-10V f=100MHz V CB=-30V, f=1MHz
Tamb=150C *Measured under pulsed conditions. For typical characteristics graphs see FMMTA92 datasheet.
TBA

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