 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BFR181 NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz 3 Junction temperature Ambient temperature Storage temperature Thermal Resistance 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Junction - soldering point2) 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR181 Maximum Ratings Parameter Marking RFs 1=B Pin Configuration 2=E Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Package SOT23 Value 12 20 20 2 20 2 175 150 -65 ... 150 -65 ... 150 mW C mA Unit V 3=C Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 91 C 1) RthJS 335 K/W Jul-30-2001 BFR181 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 8 V hFE 50 100 200 IEBO 1 A ICBO 100 nA ICES 100 A V(BR)CEO 12 V Symbol min. Values typ. max. Unit 2 Jul-30-2001 BFR181 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter AC characteristics (verified by random sampling) Transition frequency IC = 10 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 2 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum stable 1) IC = 5 mA, VCE = 8 V, ZS = ZSopt , ZL = ZLopt , f = 900 MHz Power gain, maximum available 2) IC = 5 mA, VCE = 8 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz Transducer gain IC = 5 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz 1G ms 2G ma Symbol min. fT Ccb Cce Ceb F Gms 6 - Values typ. 8 0.26 0.18 0.3 max. 0.45 - Unit GHz pF dB 1.45 1.8 18 - Gma - 11.5 - |S21e|2 14 9 - = |S21 / S12 | = |S21 / S12 | (k-(k2-1)1/2) 3 Jul-30-2001 BFR181 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.0010519 fA 22.403 1.7631 5.1127 1.6528 6.6315 1.8168 17.028 1.0549 1.1633 2.7449 0 3 V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 96.461 0.12146 16.504 0.24951 9.9037 2.1372 0.73155 0.33814 0 0.30013 0 0 0.99768 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.90617 12.603 0.87757 0.01195 0.69278 2.2171 0.43619 0.12571 319.69 0.082903 0.75 1.11 300 fA fA mA - V deg fF - V fF V eV K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut fur Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: L BI = L BO = L EI = L EO = L CI = L CO = C BE = C CB = C CE = 0.85 0.51 0.69 0.61 0 0.49 73 84 165 fF fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Jul-30-2001 nH nH nH nH nH nH fF BFR181 Total power dissipation Ptot = f (TS ) 200 mW 160 140 P tot TS 120 100 80 60 40 20 0 0 120 C 20 40 60 80 100 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 2 K/W Ptotmax / PtotDC - 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Jul-30-2001 BFR181 Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) V CE = Parameter f = 1MHz 10 GHz 10V 8V 5V 0.45 pF 0.35 8 7 Ccb 0.30 fT 0.25 6 3V 5 0.20 4 0.15 3 1V 2V 0.10 0.05 0.00 0 2 1 0 0 0.7V 4 8 12 16 V 22 2 4 6 8 10 12 14 mA 17 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 20 Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 14 dB dB 10V 5V 10V 3V 10 16 3V 2V G G 2V 8 14 6 1V 12 4 1V 0.7V 10 2 0.7V 8 0 2 4 6 8 10 12 14 mA 18 0 0 2 4 6 8 10 12 14 mA 18 IC IC 6 Jul-30-2001 BFR181 Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 20 Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) VCE = Parameter, f = 900MHz 24 dBm IC=5mA dB 0.9GHz 8V 20 18 5V 16 16 IP 3 3V G 0.9GHz 14 12 2V 14 10 8 1V 12 1.8GHz 10 1.8GHz 6 4 2 0 8 6 0 2 4 6 8 V 12 -2 0 2 4 6 8 10 12 14 16 V 20 VCE IC Power Gain Gma , Gms = f(f) VCE = Parameter 30 dB Power Gain |S21|2= f(f) V CE = Parameter 25 IC=5mA dB IC =5mA 26 24 G 20 18 16 14 12 10 8 6 4 0.0 0.5 1.0 1.5 2.0 2.5 10V 1V 0.7V GHz S21 22 15 10 5 10V 1V 0.7V 3.5 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5 f f 7 Jul-30-2001 |
Price & Availability of BFR181
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |