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DISCRETE SEMICONDUCTORS
DATA SHEET
BLF542 UHF power MOS transistor
Product specification October 1992
Philips Semiconductors
Product specification
UHF power MOS transistor
FEATURES * High power gain * Easy power control * Gold metallization * Good thermal stability * Withstands full load mismatch * Designed for broadband operation. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the UHF frequency range. The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange. PINNING - SOT171 PIN 1 2 3 4 5 6 DESCRIPTION source source gate drain source source WARNING Product and environmental safety - toxic materials
1 3 5 2 4 6 g
MBB072
BLF542
PIN CONFIGURATION
halfpage
d
s
Top view
MBA931 - 1
Fig.1 Simplified outline and symbol.
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling.
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA RF performance at Tmb = 25 C in a common source test circuit. MODE OF OPERATION CW, class-B f (MHz) 500 VDS (V) 28 PL (W) 5 GP (dB) > 13 D (%) > 50
October 1992
2
Philips Semiconductors
Product specification
UHF power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature Tmb = 25 C CONDITIONS - - - - -65 - MIN.
BLF542
MAX. 65 20 1.5 20 150 200
UNIT V V A W C C
THERMAL RESISTANCE SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink THERMAL RESISTANCE 8.8 K/W 0.4 K/W
handbook, halfpage
10
MRA735
handbook, halfpage P
ID (A)
35 tot (W) 30 25
MRA734
1
(1)
(2)
(2)
20 15 10-1 10 5 10-2 0 10
(1)
1
10
VDS (V)
102
30
50
70
90
110 130 Th (oC)
(1) Current in this area may be limited by RDS(on). (2) Tmb = 25 C.
(1) Continuous operation. (2) Short time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
October 1992
3
Philips Semiconductors
Product specification
UHF power MOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGS(th) gfs RDS(on) IDSX Cis Cos Crs PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage forward transconductance drain-source on-resistance on-state drain current input capacitance output capacitance feedback capacitance CONDITIONS ID = 0.1 mA; VGS = 0 VGS = 0; VDS = 28 V VGS = 20 V; VDS = 0 ID = 10 mA; VDS = 10 V ID = 0.3 A; VDS = 10 V ID = 0.3 A; VGS = 15 V VGS = 15 V; VDS = 10 V VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz MIN. 65 - - 2 160 - - - - -
BLF542
TYP. MAX. UNIT - - - - 240 3.3 1.4 14 9.4 1.7 - 10 1 4.5 - 5 - - - - V A A V mS A pF pF pF
handbook, halfpage
4
MBB777
handbook, halfpage
1.5 ID (A)
MBB759
T.C. (mV/K) 2
1
0
0.5 -2
-4 0 100 200 ID (mA) 300
0 0 5 10 VGS (V) 15
VDS = 10 V.
VDS = 10 V; Tj = 25 C.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current, typical values.
Fig.5
Drain current as a function of gate-source voltage, typical values.
October 1992
4
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF542
handbook, halfpage
6
MBB778
handbook, halfpage
30
MBB776
RDS (on) ()
C (pF)
4
20 Cis Cos
2
10
0 0 50 100 Tj (oC) 150
0 0 10 20 VDS (V) 30
ID = 0.3 A; VGS = 15 V
VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-resistance as a function of junction temperature, typical values.
Fig.7
Input and output capacitance as functions of drain-source voltage, typical values.
handbook, halfpage
6
MBB775
Crs (pF)
4
2
0 0 10 20 VDS (V) 30
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of drain-source voltage, typical values.
October 1992
5
Philips Semiconductors
Product specification
UHF power MOS transistor
APPLICATION INFORMATION FOR CLASS-B OPERATION Tmb = 25 C unless otherwise specified. RF performance in CW operation in a common source class-B test circuit. MODE OF OPERATION CW, class-B f (MHz) 500 VDS (V) 28 IDQ (mA) 50 PL (W) 5 GP (dB) > 13 typ. 16.5
BLF542
D (%) > 50 typ. 59
Ruggedness in class-B operation The BLF542 is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases under the following conditions: VDS = 28 V; f = 500 MHz at rated output power.
handbook, halfpage
20
MRA969
80
Gp (dB) 15
Gp
(%) 60
handbook, halfpage
10
MRA970
PL (W) 8
6 10 40 4 5 20 2
0 0 2 4 6 8 PL (W)
0 10
0 0 0.2 0.4 0.6 PIN (W) 0.8
Class-B operation; VDS = 28 V; IDQ = 10 mA; ZL = 9.7 + j24.5 ; f = 500 MHz.
Class-B operation; VDS = 28 V; IDQ = 10 mA; ZL = 9.7 + j24.5 ; f = 500 MHz.
Fig.9
Power gain and efficiency as functions of load power, typical values.
Fig.10 Load power as a function of input power, typical values.
October 1992
6
Philips Semiconductors
Product specification
UHF power MOS transistor
handbook, full pagewidth
input 50
,,
C9 C11 C3 DUT L5 L6 L7 C13 C1 L1 L2 L3 L4 C2 C4 R1 L8 C10 C12 C6 C5 R4 L9 C7 R2 R3 C8 VDD = + 28 V
BLF542
output 50
MBB760
f = 500 MHz.
Fig.11 Test circuit for class-B operation.
October 1992
7
Philips Semiconductors
Product specification
UHF power MOS transistor
List of components (see test circuit) COMPONENT C1, C5, C13 C2, C4, C10, C12 C3, C9 C6 C7 C8 C11 L1 L2 L3 L4, L5 L6 L7 L8 DESCRIPTION multilayer ceramic chip capacitor (note 1) film dielectric trimmer multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 2) multilayer ceramic chip capacitor electrolytic capacitor multilayer ceramic chip capacitor (note 1) stripline (note 3) stripline (note 3) stripline (note 3) stripline (note 3) stripline (note 3) stripline (note 3) 8 turns 0.8 mm enamelled copper wire grade 3B Ferroxcube wideband RF choke metal film resistor 10 turn potentiometer metal film resistor metal film resistor 10 k, 0.4 W 50 k 205 k, 0.4 W 10 , 0.4 W VALUE 390 pF 2 to 18 pF 39 pF 220 pF 100 nF 63 V, 10 F 10 pF 50 50 50 42 50 50 250 nH 11 mm x 2.5 mm 37 mm x 2.5 mm 13 mm x 2.5 mm 3 mm x 3 mm 39 mm x 2.5 mm 22 mm x 2.5 mm length 9 mm int. dia. 6 mm leads 2 x 5 mm DIMENSIONS
BLF542
CATALOGUE NO.
222 809 05217
2222 852 47104 2222 030 28109
L9 R1 R2 R3 R4 Notes
4312 020 36640 2322 151 71003 2322 151 72054 2322 151 71009
1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed circuit board with PTFE fibre-glass dielectric (r = 2.2); thickness 132 inch.
October 1992
8
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF542
handbook, full pagewidth
VG L9
VD
C8 C5 C6 C3 L1 L2 R1 L3 L4 L5 L8 L6 R4 C7 C9 L7
C1
C11
C13
C2
C4
C10
C12
MBB762
handbook, full pagewidth
150 mm
strap (8x)
rivet (12x)
70 mm
mounting screws (12x)
MBB761
The components are mounted on one side of a copper-clad printed circuit board; the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by means of fixing screws, hollow rivets and copper foil straps, as shown.
Fig.12 Component layout for 500 MHz test circuit.
October 1992
9
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF542
handbook, halfpage
10
MRA732
Zi ()
handbook, halfpage Z
70 60 50 40 30
MRA733
ri 0
L ()
-10 xi
-20 -30
XL
RL 20
-40 -50 100
10 0 100
200
300
400 f (MHz)
500
200
300
400
f (MHz)
500
Class-B operation; VDS = 28 V; IDQ = 10 mA; PL = 5 W.
Class-B operation; VDS = 28 V; IDQ = 10 mA; PL = 5 W.
Fig.13 Input impedance as a function of frequency (series components), typical values.
Fig.14 Load impedance as a function of frequency (series components), typical values.
handbook, halfpage gain
35
MRA971
(dB) 30 25 20
handbook, halfpage
15 10 Zi ZL
MBA379
5 0 100
200
300
400 f MHz)
500
Class-B operation; VDS = 28 V; IDQ = 10 mA; PL = 5 W.
Fig.15 Definition of MOS impedance.
Fig.16 Power gain as a function of frequency, typical values.
October 1992
10
Philips Semiconductors
Product specification
UHF power MOS transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads
BLF542
SOT171A
D
A F D1
U1 q H1 b1 C w2 M C
B
c
2
4
6
H
U2
E1
E
A
1
3
5
b e
p w3 M
w1 M A B Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 6.81 6.07 b 2.15 1.85 b1 3.20 2.89 c 0.16 0.07 D 9.25 9.04 D1 9.30 8.99 E 5.95 5.74 E1 6.00 5.70 e 3.58 F H H1 p 3.43 3.17 Q q U1 U2 w1 0.51 w2 1.02 0.04 w3 0.26 0.01
3.05 11.31 9.27 2.54 10.54 9.01
4.32 24.90 6.00 18.42 4.11 24.63 5.70
0.268 0.085 0.126 0.006 0.364 0.366 0.234 0.236 0.120 0.445 0.365 0.135 0.170 0.980 0.236 0.725 0.02 0.140 0.239 0.073 0.114 0.003 0.356 0.354 0.226 0.224 0.100 0.415 0.355 0.125 0.162 0.970 0.224
OUTLINE VERSION SOT171A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
October 1992
11
Philips Semiconductors
Product specification
UHF power MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF542
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
October 1992
12

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