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| N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - SEPT 93 FEATURES * 200 Volt VDS * RDS(on)=28 BS107PT D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25C Pulsed Drain Current Gate-Source Voltage Power Dissipation at Tamb =25C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE 200 0.12 2 20 500 -55 to +150 UNIT V A A V mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C) PARAMETER Drain-Source Breakdown Voltage Gate Body Leakage Drain Cut-Off Current Drain Cut-Off Current Static Drain-Source on-State Resistance SYMBOL BVDSS IGSS IDSS IDSX RDS(on) 15 MIN. 200 TYP. 230 MAX. UNIT V CONDITIONS. ID=100A, VGS=0V VGS=15V, VDS=0V VGS=0V, VDS=130V VGS=0.2V, VDS=70V VGS=2.6V, ID=20mA* VGS=2.7V, ID=100mA* 10 30 1 28 30 nA nA A * Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-24 BS107PT TYPICAL CHARACTERISTICS ID(On) - On-State Drain Current (Amps) 1.2 ID(On) -On-State Drain Current (Amps) 1.0 0.8 0.6 0.4 0.2 VGS= 10V 6V 0.5 0.4 0.3 VGS= 10V 6V 4V 4V 0.2 3V 0.1 3V 0 0 20 40 60 80 100 0 0 2 4 6 8 10 VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Output Characteristics VDS-Drain Source Voltage (Volts) Saturation Characteristics VDS-Drain Source Voltage (Volts) 2.5 30 2.0 1.5 ID= 100mA 1.0 50mA 25mA 0 2 2.5 3.0 3.5 4.0 4.5 20 ID= 500mA 10 250mA 0 0 2 4 6 8 10 I00mA 0.5 VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Voltage Saturation Characteristics ID(On) -On-State Drain Current (Amps) 0.6 60 VDS=25V 0.5 50 Voltage Saturation Characteristics Ciss 0.4 VDS=10V 0.3 C-Capacitance (pF) 40 30 0.2 20 0.1 0 0 2 4 6 8 10 10 0 0 10 20 30 40 50 Coss Crss VGS-Gate Source Voltage (Volts) VDS -Drain-Source Voltage (Volts) Transfer characteristics Capacitance v drain-source voltage 3-25 BS107PT TYPICAL CHARACTERISTICS 500 500 gfs-Transconductance (mS) 400 gfs-Transconductance (mS) VDS= 25V 400 300 300 VDS= 25V 200 200 100 100 0 0 0.2 0.4 0.6 0.8 1.0 0 0 2 4 6 .8 10 ID(On)-Drain Current (Amps) VGS-Gate-Source Voltage (Volts) Transconductance v drain current RDS(On)-Drain Source Resistance () Transconductance v gate-source voltage VGS-Gate-Source Voltage (Volts) 10 ID=500mA VDS= 50V 100V 180V 100 50 ID= 500mA 5 250mA I00mA 10 1 5 10 20 25mA 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Q-Charge (nC) VGS-Gate Source Voltage (Volts) Gate charge v gate-source voltage 2.4 Gate charge v gate-source voltage Normalised RDS(on) and VGS(th) 500 2.0 PD-Power Dissipation (mW) 1.6 ain Dr e nc ta sis Re ce ur So ) on S( RD VGS=5V ID=100mA 400 300 1.2 0.8 ID=-1mA 200 Gate T hre VDS=VGS shold V oltage VG S(TH) 100 0.5 -50 -40 -20 0 20 40 60 80 100 120 140 150 0 0 20 40 60 80 100 120 140 160 180 200 T-Temperature (C) Tamb - Ambient Temperature (C) Normalised RDS(on) and VGS(th) v Temperature Power v temperature derating curve 3-26 |
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