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CYStech Electronics Corp.
High Voltage PNP Epitaxial Planar Transistor
Spec. No. : C309N3 Issued Date : 2003.05.09
Revised Date : 2004.04.02 Page No. : 1/4
BTA1759N3
Description
* High breakdown voltage. (BVCEO=-400V) * Low saturation voltage, typical VCE(sat) =-0.2V at Ic/IB =-20mA/-2mA. * Wide SOA (safe operation area). * Complementary to BTC4505N3.
Symbol
BTA1759N3
Outline
SOT-23
BBase CCollector EEmitter
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits -400 -400 -7 -300 225 150 -55~+150 Unit V V V mA mW C C
BTA1759N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO ICER IEBO *VCE(sat) *VBE(sat) *hFE fT Cob Min. -400 -400 -7 100 Typ. -0.08 12 13 Max. -10 -20 -10 -0.5 -1.2 270 Unit V V V A nA A V V MHz pF
Spec. No. : C309N3 Issued Date : 2003.05.09
Revised Date : 2004.04.02 Page No. : 2/4
Test Conditions IC=-50A IC=-1mA IE=-50A VCB=-400V VCE=-300V, REB=4k VEB=-6V IC=-20mA, IB=-2mA IC=-20mA, IB=-2mA VCE=-10V, IC=-10mA VCE=-10V, IC=-10mA, f=5MHz VCB=-10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width 380s, Duty Cycle2%
BTA1759N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gian vs Collector Current
1000 10000 Saturation Voltage---(mV)
Spec. No. : C309N3 Issued Date : 2003.05.09
Revised Date : 2004.04.02 Page No. : 3/4
Saturation Voltage vs Collector Current
Current Gain---HFE
VCE = 10V
1000
VCE(SAT) @ IC = 20IB
100
VCE = 5V
100
VCE(SAT) @ IC =10IB
10 1 10 Collector Current---IC(mA) 100
10 1 10 Collector Current---IC(mA) 100
Saturation Voltage vs Collector Current
10000 Saturation Voltage---(mV)
VBE(SAT) @ IC = 10IB
Power Derating Curve
250 Power Dissipation---PD(mW) 200 150 100 50 0
1000
100 1 10 100 1000 Collector Current---IC(mA)
0
50
100
150
200
Ambient Temperature---TA()
BTA1759N3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
Spec. No. : C309N3 Issued Date : 2003.05.09
Revised Date : 2004.04.02 Page No. : 4/4
A L 3 B 1 2 S
Marking:
TE 4Z
V
G
3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector
C D K
H
J
*: Typical
DIM A B C D G H
Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040
Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10
DIM J K L S V
Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256
Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTA1759N3
CYStek Product Specification

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