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| LAB MECHANICAL DATA Dimensions in mm 10.2 SEME BUL52AFI ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. 6.3 15.1 Designed for use in electronic ballast applications * * * * SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING 123 1.3 14.0 0.85 FEATURES 2.54 2.54 ISOLATED TO220 Pin 1 - Base Pin 2 - Collectorn Pin3 - Emitter * Multi-base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. * Ion implant and high accuracy masking for tight control of characteristics from batch to batch. * Triple Guard Rings for improved control of high voltages. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCBO VCEO VEBO IC IC(PK) IB Ptot Tstg Semelab plc. Collector - Base Voltage Collector - Emitter Voltage (IB = 0) Emitter - Base Voltage (IC = 0) Continuous Collector Current Peak Collector Current Base Current Total Dissipation at Tcase = 25C Operating and Storage Temperature Range Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 1000V 500V 10V 6A 10A 2.5A 45W -55 to 150C Prelim. 3/97 LAB ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO SEME BUL52AFI Test Conditions Min. 500 1000 10 Typ. Max. Unit ELECTRICAL CHARACTERISTICS Collector - Emitter Sustaining Voltage IC = 10mA Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector - Base Cut-Off Current Collector - Emitter Cut-Off Current Emitter Cut-Off Current IC = 1mA IE = 1mA VCB = 1000V TC = 125C IB = 0 VEB = 9V IC = 0 IC = 0.1A IC = 1A IC = 2.5A IC = 100mA TC = 125C VCE = 5V VCE = 5V VCE = 1V TC = 125C IB = 20mA IB = 0.5A IB = 0.5A IB = 0.2A IB = 0.5A VCE = 4V f = 1MHz VCE = 500V V 10 100 100 10 100 A A A 18 12 5 30 15 9 0.05 0.1 0.3 0.8 0.9 20 45 0.1 0.2 0.8 1.0 1.2 V V -- hFE* DC Current Gain VCE(sat)* Collector - Emitter Saturation Voltage IC = 1A IC = 2.5A IC = 1A IC = 2.5A IC = 0.2A VCB = 20V VBE(sat)* Base - Emitter Saturation Voltage DYNAMIC CHARACTERISTICS Transition Frequency Output Capacitance ft Cob MHz pF * Pulse test tp = 300s , < 2% Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 3/97 LAB SEME BUL52AFI DC Current Gain Collector-Emitter Saturation Voltage Forward Bias Safe Operating Area Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 3/97 LAB SEME BUL52AFI DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 3/97 |
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