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| CHA5295 24.5-26.5GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5295 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. 32 30 Vd1 Vd2 Vg3 Vd3 Vg1 Vg2 Vd2 Vg3 Vd3 Main Features Performances : 24.5-26.5GHz 30dBm output power @ 1dB comp. 17 dB 1dB gain DC power consumption, 800mA @ 6V Chip size : 4.01 x 2.52 x 0.05 mm 28 26 24 22 20 18 16 14 12 10 24 24,5 25 25,5 26 26,5 Frequency (GHz) P-1dB (dBm) Linear Gain (dB) PAE (%) Typical on jig Measurements Main Characteristics Tamb. = 25C Symbol Fop G P1dB Id Parameter Operating frequency range Small signal gain Output power at 1dB gain compression Bias current Min 24.5 16 29 Typ 17 30 800 Max 26.5 Unit GHz dB dBm mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA529522297 -24-Oct.-02 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5295 Electrical Characteristics Tamb = +25C, Vd = 6V Id #800mA Symbol Fop G G Is P1dB P03 IP3 PAE VSWRin 24.5-26.5GHz High Power Amplifier Parameter Operating frequency range (1) Small signal gain (1) Small signal gain flatness (1) Reverse isolation Pulsed output power at 1dB compression (1) Output power at 3dB gain compression (1) 3 order intercept point (2) (3) Power added efficiency at 1dB comp. Input VSWR rd Min 24.5 16 Typ Max 26.5 Unit GHz dB dB dB dBm dBm dBm % 17 1 50 29 30 31 41 18 3.5:1 2:1 155 800 1000 VSWRout Output VSWR Tj Id Junction temperature for 80C backside Bias current @ small signal C mA (1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports. (2) Value representative for CW on jig measurement. (3) Linearity could be improved with a biasing point around 600mA ( see curves on next pages) Absolute Maximum Ratings Tamb. = 25C (1) Symbol Vd Id Vg Ig Vdg Pin Tch Ta Tstg Parameter Maximum drain bias voltage with Pin max=12dBm Maximum drain bias current Gate bias voltage Gate bias current Maximum drain to gate voltage (Vd - Vg) Maximum input power overdrive (2) Maximum channel temperature Operating temperature range Storage temperature range Values +6.25 1400 -2.5 to +0.4 -5 to +5 +8.0 +15 +175 -40 to +80 -55 to +125 Unit V mA V mA V dBm C C C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA529522297 -24-Oct.-02 2/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 24.5-26.5GHz High Power Amplifier Typical on Jig Measurements (including jig losses) Bias conditions: Vd=6V, Vg tuned for Id #800mA 20 CHA5295 15 10 Gain & RLoss (dB) 5 0 S11 -5 -10 S22 -15 -20 22 24 26 28 30 32 Frequency (GHz) Linear Gain & Return Losses versus frequency 32 30 28 26 24 22 20 18 16 14 12 10 24 24,5 25 25,5 26 26,5 Frequency (GHz) Linear Gain, Output power & PAE @ 1dB compression Ref. : DSCHA529522297 -24-Oct.-02 3/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 P-1dB (dBm) Linear Gain (dB) PAE (%) CHA5295 24.5-26.5GHz High Power Amplifier 20 19 18 17 1300 24,5GHz 25,5GHz 26,5GHz Current 1250 1200 1150 1100 1050 1000 950 900 850 800 16 15 14 13 12 11 10 14 16 18 20 22 24 26 28 30 32 Output power (dBm) Output power versus frequency & Drain current @ 25.5GHz 50 46 42 38 34 30 26 22 18 F=24.5GHz F=10MHz C/I3 (dBc) 14 10 IP3 (dBm) 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Output Power(dBm) C/I3 & IP3 versus DCL output power @ 24.5GHz, 800mA Ref. : DSCHA529522297 -24-Oct.-02 4/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Drain current (mA) @ 25.5GHz Gain (dB) 24.5-26.5GHz High Power Amplifier CHA5295 50 46 42 38 34 30 26 22 18 F=26.5GHz F=10MHz C/I3 (dBc) 14 10 IP3 (dBm) 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Output Power(dBm) C/I3 & IP3 versus DCL output power @ 26.5GHz, 800mA 50 48 600mA 46 44 C/I3 ( dB) 42 40 38 +25C -35C 36 34 32 30 12 14 +75C 800mA 16 18 SCL Output Power (dBm) 20 22 24 C/I3 versus drain current & temperature @ 25.5GHz Ref. : DSCHA529522297 -24-Oct.-02 5/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5295 24.5-26.5GHz High Power Amplifier 30 28 26 24 Gain (dB) +25C - 600mA +25C - 800mA -40C - 600mA -40C - 800mA +85C - 600mA +85C - 800mA 22 20 18 16 14 12 10 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 Output power (dBm) Output power versus temperature & Drain current @ 25.5GHz Ref. : DSCHA529522297 -24-Oct.-02 6/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 24.5-26.5GHz High Power Amplifier Chip Assembly and Mechanical Data To Vd1,Vd2 DC Drain supply feed To Vd3 DC Drain supply feed CHA5295 To Vg1,2,3 DC Gate supply feed Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is to be prefered. Bonding pad positions. ( Chip thickness : 50m. All dimensions are in micrometers ) Ref. : DSCHA529522297 -24-Oct.-02 7/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5295 Application note Bias operation sequence: ON: Supply Gate voltage Supply Drain voltage OFF: Cut off Drain voltage Cut off Gate voltage 24.5-26.5GHz High Power Amplifier Due to 50m thickness, specific care is requested for the handling and assembly. Ordering Information Chip form : CHA5295-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA529522297 -24-Oct.-02 8/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 |
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