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| CHA5390 24-30GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5390 is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Typical in JIG measurements : 15 30 10 25 5 20 Main Features * * * * * * Broadband performances : 24-30GHz 25dBm output power. 24dB gain Good broadband matchings Low DC power consumption, 460mA @ 5V Chip size : 2.99 X 1.31 X 0.10 mm 0 15 -5 10 -10 5 -15 0 -20 -5 -25 22 24 26 28 Frequency (GHz) 30 32 -10 Input Rloss : grey solid line - Output Rloss : dash line. Main Characteristics Tamb. = 25C Parameter Min Typ Max Unit Fop G P01 Id Operating frequency range Small signal gain Output power at 1dB gain compression Bias current 24 21 24 24 25 460 30 GHz dB dBm 720 mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : CHA53901012 - 12-Jan.-01 1/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 24-30GHz Medium Power Amplifier Electrical Characteristics for Broadband Operation Tamb = +25C, Vd1,2,3,4 = 5V Id=460mA Symbol Fop G G Is P1dB IP3 PAE VSWRin VSWRout Id CHA5390 Parameter Operating frequency range Small signal gain (1) Small signal gain flatness (1) Reverse isolation Pulsed output power at 1dB compression (1) 3 order intercept point Power added efficiency at saturation Input VSWR Output VSWR Bias current rd Min 24 21 (2) Typ Max 30 Unit GHz dB dB dB dBm dBm % 24 (2) 2 50 24 25 33 16 3.0:1 3.0:1 460 720 mA (1) On Wafer measurements (2) [26-29 GHz]: 24dB min [24-31 GHz]: 21dB min For Tj<175C ( 80C ambient ), Id should be below 475mA under 5V bias. Current source biasing network is recommended. Absolute Maximum Ratings Tamb. = 25C (1) Symbol Vd Id Vg Pin Ta Tstg Drain bias voltage Drain bias current Gate bias voltage Maximum peak input power overdrive (2) Operating temperature range Storage temperature range Parameter Values 6.0 720 -2.0 to +0.4 +15 -40 to +85 -55 to +155 Unit V mA V dBm C C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : CHA53901012 - 12-Jan.-01 2/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 24-30GHz Medium Power Amplifier CHA5390 Typical Scattering Parameters ( On wafer Sij measurements ) Bias Conditions : Freq GHz 10,00 11,00 12,00 13,00 14,00 15,00 16,00 17,00 18,00 19,00 20,00 21,00 22,00 23,00 24,00 25,00 26,00 27,00 28,00 29,00 30,00 31,00 32,00 33,00 34,00 35,00 36,00 37,00 38,00 39,00 40,00 41,00 42,00 43,00 44,00 45,00 46,00 47,00 48,00 49,00 50,00 S11 dB -0,29 -0,28 -0,37 -0,44 -0,52 -0,72 -0,90 -1,27 -1,67 -2,46 -3,43 -4,70 -6,51 -8,25 -9,14 -8,55 -7,35 -6,98 -7,08 -8,55 -10,35 -10,35 -10,57 -9,06 -5,85 -4,00 -2,75 -2,05 -1,57 -1,31 -1,13 -0,92 -0,78 -0,68 -0,65 -0,54 -0,36 -0,27 -0,34 -0,36 -0,33 Vd1,2,3,4 = 5 Volt, Vg1=Vg2,3,4 for Id total = 460 mA. S11 / 130,16 124,05 116,99 110,04 101,55 92,63 82,31 70,45 56,58 39,70 20,21 -3,92 -32,14 -65,38 -101,40 -132,96 -166,59 162,62 131,98 104,51 86,80 55,09 12,96 -29,71 -67,30 -102,02 -128,52 -147,84 -163,57 -176,44 172,84 163,42 154,77 146,73 139,75 133,59 127,43 121,26 115,63 110,09 104,27 S12 dB -75,37 -81,16 -72,11 -67,15 -62,83 -70,09 -71,91 -76,18 -64,68 -57,90 -70,93 -72,62 -63,69 -63,11 -58,44 -61,00 -57,18 -58,79 -59,95 -53,56 -56,73 -56,70 -60,16 -60,33 -62,25 -57,44 -50,88 -54,34 -52,72 -49,31 -46,92 -50,28 -53,84 -52,16 -52,59 -61,38 -51,37 -46,98 -41,66 -51,95 -48,05 S12 / -43,42 -71,65 -126,26 -168,43 161,43 78,51 128,46 107,49 23,57 -132,71 -36,12 -152,80 -136,16 -140,18 139,63 143,50 129,53 86,49 98,53 39,77 63,65 39,90 8,74 3,48 10,68 106,73 63,61 37,74 21,62 8,02 -24,29 -74,06 -95,08 -99,63 -134,12 -168,80 122,79 89,44 36,57 3,01 39,26 3/6 S21 dB -34,97 -28,63 -22,61 -16,98 -11,59 -6,39 -1,14 2,51 6,33 10,08 12,99 16,09 18,62 19,93 21,09 21,95 22,91 24,06 24,67 24,75 22,41 15,27 5,20 -5,52 -13,87 -25,98 -40,47 -54,58 -57,99 -44,73 -46,12 -50,08 -51,70 -53,15 -50,20 -54,54 -39,96 -35,22 -32,62 -39,27 -35,81 S21 / 121,53 83,18 38,63 -5,99 -54,05 -103,80 -160,60 145,18 87,15 29,84 -40,94 -93,03 -165,91 124,97 56,97 -10,22 -80,46 -154,23 120,37 27,75 -81,77 167,03 76,86 4,57 -54,17 -129,57 149,77 67,95 -11,22 -27,42 -20,40 -74,61 -137,05 -122,09 -107,23 110,71 -168,88 -157,54 -134,30 -123,83 -4,84 S22 dB -0,06 -0,15 -0,22 -0,60 -1,15 -1,82 -3,31 -4,18 -5,81 -7,79 -12,99 -14,82 -29,66 -19,94 -12,89 -10,26 -8,40 -7,08 -6,87 -7,49 -5,44 -5,66 -7,23 -8,61 -8,80 -7,32 -5,61 -4,56 -3,80 -2,84 -2,52 -2,34 -1,76 -1,64 -1,46 -1,40 -1,33 -1,26 -1,02 -1,07 -1,07 S22 / -86,95 -96,45 -107,06 -118,07 -129,62 -142,41 -155,90 -169,19 178,80 163,19 172,06 133,35 66,63 -63,84 -82,46 -100,64 -116,75 -132,67 -152,96 -160,23 173,15 134,04 94,35 52,15 13,41 -20,49 -44,58 -65,34 -81,87 -96,60 -109,78 -121,05 -132,13 -141,28 -149,16 -157,67 -165,36 -171,65 -179,72 174,56 168,39 Ref. : CHA53901012 - 12-Jan.-01 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5390 Ref. : CHA53901012 - 12-Jan.-01 4/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 24-30GHz Medium Power Amplifier Typical In JIG Measurements Bias Conditions : Vd1,2,3,4 = 5 Volt, Vg1,2,3,4 for Id = 460 mA CHA5390 In JIG Scattering Parameters 15 10 5 0 -5 -10 -15 -20 -25 5 10 15 20 25 Frequency (GHz) 30 35 40 S11 (dB) S22 (dB) S21 (dB) 0 -5 -10 30 25 20 15 10 5 Power Measurements 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 24 25 26 27 28 29 Frequency (GHz) 30 31 32 P-1dB (dBm) Linear Gain (dB) Associated PAE (%) Ref. : CHA53901012 - 12-Jan.-01 5/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 24-30GHz Medium Power Amplifier CHA5390 Chip Assembly and Mechanical Data Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is recommended Bonding pad positions Ref. : CHA53901012 - 12-Jan.-01 6/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 24-30GHz Medium Power Amplifier CHA5390 ( Chip thickness : 100m. All dimensions are in micrometers ) Ref. : CHA53901012 - 12-Jan.-01 7/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5390 Ordering Information Chip form : CHA5390-99F Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : CHA53901012 - 12-Jan.-01 8/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 |
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