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| MITSUBISHI IGBT MODULES CM400HU-24H HIGH POWER SWITCHING USE INSULATED TYPE A B J E H K L M(4 - Mounting Holes) F C D G E G E C CM 2 - M4 NUTS 2 - M6 NUTS TC Measured Point P N Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM400HU-24H is a 1200V (VCES), 400 Ampere Single IGBT Module. Type CM Current Rating Amperes 400 VCES Volts (x 50) 24 E C E G Outline Drawing and Circuit Diagram Dimensions A B C D E F G Inches 4.21 3.660.01 2.44 1.890.01 0.53 0.37 0.45 Millimeters 107.0 93.00.25 62.0 48.00.25 13.5 9.5 11.5 Dimensions H J K L M N P Inches 0.96 0.31 1.14 0.81 0.26 Dia. 1.34 +0.04/-0.02 1.02 +0.04/-0.02 Millimeters 24.5 8.0 29.0 20.5 6.5 Dia. 34 +1.0/-0.5 26 +1.0/-0.5 Sep.1998 MITSUBISHI IGBT MODULES CM400HU-24H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25C) Peak Collector Current (Tj 150C) Emitter Current** (Tc = 25C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25C) Mounting Torque, M6 Main Terminal, M6 Mounting Mounting Torque, M4 Terminal Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - - Viso CM400HU-24H -40 to 150 -40 to 125 1200 20 400 800* 400 800* 2100 3.5~4.5 1.3~1.7 450 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts N*m N*m Grams Vrms * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 40mA, VCE = 10V IC = 400A, VGE = 15V, Tj = 25C IC = 400A, VGE = 15V, Tj = 125C Total Gate Charge Emitter-Collector Voltage* VCC = 600V, IC = 400A, VGE = 15V IE = 400A, VGE = 0V Min. - - 4.5 - - - - Typ. - - 6 2.9 2.85 1500 - Max. 2 0.5 7.5 3.7 - - 3.2 Units mA A Volts Volts Volts nC Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 400A, VGE1 = VGE2 = 15V, RG = 0.78, Resistive Load Switching Operation IE = 400A, diE/dt = -800A/s IE = 400A, diE/dt = -800A/s VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 2.2 Max. 60 21 12 250 350 350 350 300 - Units nF nF nF ns ns ns ns ns C Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Rth(c-f) Test Conditions Per IGBT Module Per FWDi Module Per Module, Thermal Grease Applied Min. - - - Typ. - - 0.02 Max. 0.06 0.09 - Units C/W C/W C/W Sep.1998 MITSUBISHI IGBT MODULES CM400HU-24H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 800 COLLECTOR CURRENT, IC, (AMPERES) VGE = 20V 12 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC 800 15 COLLECTOR CURRENT, IC, (AMPERES) 5 VCE = 10V Tj = 25C Tj = 125C VGE = 15V Tj = 25C Tj = 125C 600 11 600 4 3 2 1 400 10 400 200 9 8 200 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 0 240 480 720 960 1200 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25C 102 Tj = 25C CAPACITANCE, Cies, Coes, Cres, (nF) 8 6 4 2 EMITTER CURRENT, IE, (AMPERES) IC = 800A Cies 101 Coes IC = 400A 102 100 VGE = 0V Cres IC = 160A 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10-1 10-1 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) di/dt = -800A/sec Tj = 25C Irr REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 td(off) REVERSE RECOVERY TIME, trr, (ns) 103 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 400A 16 12 8 4 SWITCHING TIME, (ns) tf VCC = 400V VCC = 600V 102 td(on) 102 trr 101 tr VCC = 600V VGE = 15V RG = 0.78 Tj = 125C 101 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 101 101 102 EMITTER CURRENT, IE, (AMPERES) 100 103 0 0 400 800 1200 1600 2000 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM400HU-24H HIGH POWER SWITCHING USE INSULATED TYPE NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) 10-3 101 10-2 10-1 100 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 10-2 10-1 100 101 100 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.06C/W 100 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.09C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 Sep.1998 |
Price & Availability of CM400HU-24H
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