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 CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES
Central
TM
Semiconductor Corp.
DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPSH-3E Series types are Enhanced Versions of the CMPSH-3 Series of Silicon Schottky Diodes in an SOT-23 Surface Mount Package. FEATURED ENHANCED SPECIFICATIONS: IF from 100 mA max to 200 mA max.
SOT-23 CASE CMPSH-3E: CMPSH-3AE: CMPSH-3CE: CMPSH-3SE: SINGLE DUAL, COMMON ANODE DUAL, COMMON CATHODE DUAL, IN SERIES

BVR from 30V min to 40 V min. VF from 1.0 V max to 0.8 V max. CODE: CODE: CODE: CODE: D95E DB1E DB2E DA5E
UNITS V mA mA mA mW C C/W
MARKING MARKING MARKING MARKING
SYMBOL VRRM IF IFRM IFSM PD TJ, Tstg JA
MAXIMUM RATINGS: (TA=25C)
Peak Repetitive Reverse Voltage Continuous Forward Current
Peak Repetitive Forward Voltage Forward Surge Current, tp=10ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
40 200 350 750 350 -65 to +150 357
ELECTRICAL CHARACTERISTICS PER DIODE: SYMBOL TEST CONDITIONS IR=100A IF=2.0mA IF=15mA IF=100mA IF=200mA VR=25V VR=25V, TA=100C VR=1.0V, f=1 MHz IF=IR=10mA, Irr=1.0mA, RL=100
(TA=25C unless otherwise noted) MIN TYP 40 50 0.29 0.37 0.61 0.65 90 25 7.0
MAX
UNITS V V V V V nA A pF ns
BVR VF VF VF
VF
0.33 0.42 0.80 1.0 500 100 5.0
IR IR CT trr

Enhanced specification. Additional Enhanced specification.
R2 (6-August 2003)
Central
TM
Semiconductor Corp.
CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES
SOT-23 CASE - MECHANICAL OUTLINE
2
1
2
1
2
1
2
1
D1
D2
D1
D2
D1
D2
3
3
3
3
LEAD CODE:
CMPSH-3E 1) Anode 2) No Connection 3) Cathode MARKING CODE: D95E
LEAD CODE:
CMPSH-3AE 1) Cathode D2 2) Cathode D1 3) Anode D1, Anode D2 MARKING CODE: DB1E
LEAD CODE:
CMPSH-3CE 1) Anode D2 2) Anode D1 3) Cathode D1, Cathode D2 MARKING CODE: DB2E
LEAD CODE:
CMPSH-3SE 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODE: DA5E
R2 (6-August 2003)


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