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| CMPT3410 SURFACE MOUNT NPN SILICON LOW VCE (SAT) TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3410 type is a NPN Low VCE (SAT) silicon transistor manufactured by the epitaxial planar process and epoxy molded in an SOT-23 surface mount package. This device is designed for battery driven, handheld devices requireing high current and Low VCE(SAT) voltages. MARKING CODE: C341 SOT-23 CASE MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Peak) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM PD TJ,Tstg JA 40 25 6.0 1.0 1.5 350 -65 to +150 357 UNITS V V V A A mW C C/W ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=40V IEBO VEB=6.0V BVCBO IC=100A 40 BVCEO IC=10mA 25 BVEBO IE=100A 6.0 VCE(SAT) IC=50mA, IB=5.0mA VCE(SAT) IC=100mA, IB=10mA VCE(SAT) IC=200mA, IB=20mA VCE(SAT) IC=500mA, IB=50mA VCE(SAT) IC=800mA, IB=80mA VCE(SAT) IC=1.0A, IB=100mA VBE(SAT) IC=800mA, IB=80mA VBE(ON) VCE=1.0V, IC=10mA hFE VCE=1.0V, IC=10mA 100 hFE VCE=1.0V, IC=100mA 100 hFE VCE=1.0V, IC=500mA 100 hFE VCE=1.0V, IC=1.0A 50 fT VCE=10V, IC=50mA, f=100MHz 100 Cob VCB=10V, IE=0, f=1.0MHz TYP MAX 100 100 20 35 75 130 200 250 50 75 150 250 400 450 1.1 0.9 300 UNITS nA nA V V V mV mV mV mV mV mV V V 10 MHz pF R0 (15-November 2004) Central TM CMPT3410 SURFACE MOUNT NPN SILICON LOW VCE (SAT) TRANSISTOR Semiconductor Corp. SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR MARKING CODE: C341 R0 (15-November 2004) |
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