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| CMPT591E SURFACE MOUNT PNP SILICON TRANSISTOR Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CMPT591E type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current, general purpose amplifier applications. Marking Code is C59. SOT-23 CASE MAXIMUM RATINGS: (TA=25C) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Base Current IB Collector Current (Peak) ICM Power Dissipation PD Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance JA 80 60 5.0 1.0 200 2.0 350 -65 to +150 357 UNITS V V V A mA A mW C C/W ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) SYMBOL ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) hFE hFE hFE hFE fT Cob TEST CONDITIONS VCB=60V VEB=4.0V IC=100A IC=10mA IE=100A IC=500mA, IB=50mA IC=1.0A, IB=100mA IC=1.0A, IB=100mA VCE=5.0V, IC=1.0A VCE=5.0V, IC=1.0mA VCE=5.0V, IC=500mA VCE=5.0V, IC=1.0A VCE=5.0V, IC=2.0A VCE=10V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1.0MHz MIN MAX 100 100 UNITS nA nA V V V V V V V 80 60 5.0 0.20 0.40 1.1 1.0 200 200 50 15 150 600 10 MHz pF R2 ( 30-August 2001) Central TM CMPT591E SURFACE MOUNT PNP SILICON TRANSISTOR Semiconductor Corp. SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C59 R2 ( 30-August 2001) |
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