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| Datasheet File OCR Text: |
| CMPTH10 NPN SILICON RF TRANSISTOR Central DESCRIPTION: TM Semiconductor Corp. SOT-23 CASE The CENTRAL SEMICONDUCTOR CMPTH10 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and high output oscillator applications. Marking code is C3E. MAXIMUM RATINGS (TA=25oC) SYMBOL VCBO VCEO VEBO PD TJ,Tstg JA UNITS V V V mW oC oC/W Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 30 25 3.0 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VBE(ON) hFE fT Ccb Crb rb'Cc TEST CONDITIONS VCB=25V VEB=2.0V IC=100A IC=1.0mA IE=10A IC=4.0mA, IB=0.4mA VCE=10V, IB=4.0mA VCE=10V, IC=4.0mA VCE=10V, IC=4.0mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VCB=10V, IE=0, f=1.0MHz VCB=10V, IC=4.0mA, f=31.8MHz MIN MAX 100 100 UNITS nA nA V V V V V MHz pF pF ps 30 25 3.0 0.50 0.95 60 650 0.70 0.65 9.0 208 All dimensions in inches (mm). LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R2 209 |
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