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Reflective Photosensors (Photo Reflectors) CNB2001 Reflective Photosensor Overview CNB2001 is a small, thin SMD-compatible reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Darlington phototransistor in a single resin package. 1 4.30.3 2.7 0.35 Unit : mm 3.4 1.8 3 C0.5 Chip center 0.15 0.05+0.1 -0.05 Features Reflow-compatible reflective photosensor Ultraminiature, thin type : 2.7 x 3.4 mm (height : 1.5 mm) Visible light cutoff resin is used High current-transfer ratio ,,,, ,, *1 Absolute Maximum Ratings (Ta = 25C) Parameter Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Output (Photo Collector to emitter voltage transistor) Emitter to collector voltage Collector power dissipation Temperature Operating ambient temperature Storage temperature Symbol Ratings VR IF PD*1 IC VCEO VECO PC *2 Unit V mA mW mA V V mW C C 6 50 75 30 35 6 75 -25 to +85 (Note) Tolerance unless otherwise specified is 0.2 Topr Tstg -40 to +100 Input power derating ratio is 1.0 mW/C at Ta 25C. *2 Output power derating ratio is 1.0 mW/C at Ta 25C. Electrical Characteristics (Ta = 25C) Parameter Forward voltage (DC) Input characteristics Reverse current (DC) Output characteristics Collector cutoff current Collector current Symbol VF IR ICEO IC*1 IF = 20mA VR = 3V VCE = 10V VCC = 2V, IF = 4mA, RL = 100, d = 1mm VCC = 2V, IF = 4mA, RL = 100 IF = 4mA, IC = 0.5mA VCC = 2V, IC = 10mA, RL = 100 120 115 0.52 Conditions min typ 1.2 max 1.4 10 1.0 15.0 5.0 1.2 Unit V A A mA A V s Leakage current ID Transfer Collector to emitter saturation voltage VCE(sat) characteristics tr*2 Response time tf*2 *1 Output Current (IC) measurement method (see figure below.) *2 Response time measurement circuit (see figure below.) Color indication of classifications tr : Rise time tf : Fall time Glass plate Evaporated Al d = 1mm Sig.IN Glass plate Evaporated Al d = 1mm IF ,, ,,, ,, , RL IC VCC Sig.IN 50 RL Sig. VCC OUT Sig.OUT tr tf 90% 10% Input and output are handled electrically. This product is not designed to withstand radiation. ,, ,, 1.5 23 4 Pin connection Color of rank 1: Anode 2: Cathode 3: Emitter 4: Collector 1 2 4-0.7 4 4-0.5 0.85 , ,,, ,,, ,,, , ,,, ,,, ,,, Class Q R S IC (A) 0.52 to 1.94 1.45 to 5.4 4.0 to 15.0 Color Orange White Light blue 1 CNB2001 Reflective Photosensors (Photo Reflectors) IF , IC -- Ta 60 60 IF -- VF 10 3 Ta = 25C IC -- IF VCC = 5V Ta = 25C d = 1mm RL = 100 IF , IC (mA) 50 IF 50 IC (mA) Collector current Forward current, collector current 40 IC IF (mA) 10 2 40 Forward current 30 30 10 20 20 1 10 10 0 - 25 0 20 40 60 80 100 0 0 0.4 0.8 1.2 1.6 2.0 2.4 10 -1 1 10 10 2 10 3 Ambient temperature Ta (C ) Forward voltage VF (V) Forward current IF (mA) VF -- Ta 1.6 10 2 IC -- VCE Ta = 25C d = 1mm IF = 10mA 4mA 2mA 1mA 160 IC -- Ta VCC = 2V IF = 4mA RL = 100 120 IC (mA) VF (V) 1.2 10mA 1mA 0.8 10 1 Relative output current 10 2 Forward voltage Collector current IC (%) IF = 50mA 80 0.4 10 -1 40 0 - 40 - 20 0 20 40 60 80 100 10 -2 10 -1 1 10 0 - 40 - 20 0 20 40 60 80 100 Ambient temperature Ta (C ) Collector to emitter voltage VCE (V) Ambient temperature Ta (C ) ICEO -- Ta 10 3 VCE = 10V 10 5 tr , tf -- IC 100 VCC = 2V Ta = 25C : tr : tf 10 4 IC -- d VCC = 2V Ta = 25C IF = 4mA 80 10 Relative output current 60 Rise time , fall time Dark current 10 3 RL = 1k 500 100 1 40 10 2 10 -1 20 10 -2 - 40 - 20 0 20 40 60 80 100 10 10 -2 10 -1 1 10 0 0 2 Ambient temperature Ta (C ) Collector current IC (mA) Distance d (mm) 2 , , d 4 6 8 10 ICEO (A) tr , tf (s) 10 2 IC (%) |
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