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| PROCESS Small Signal Transistor NPN - RF Transistor Chip CP223 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 23,340 PRINCIPAL DEVICE TYPES 2N3866 EPITAXIAL PLANAR 22 x 22 MILS 8.0 MILS 3.5 MILS DIAMETER 3.5 x 3.5 MILS Al - 30,000A Au - 12,000A BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002) Central TM PROCESS CP223 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002) |
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