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| Datasheet File OCR Text: |
| PROCESS CP287 Power Transistor 8.0 Amp NPN Silicon Power Transistor Chip Central TM Semiconductor Corp. PROCESS DETAILS Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization 130 x 130 MILS 9.5 MILS 37 x 20 MILS 38 x 20 MILS Al - 45,000A Ti/Ni/Ag - (3000A, 10,000A, 10,000A) GEOMETRY GROSS DIE PER 4 INCH WAFER 974 PRINCIPAL DEVICE TYPES MJE13007 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (26-July 2005) |
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